Semiconductor device and method of manufacturing the same

Abstract

According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO 2 ), and a diffusion preventive film (BN) containing boron and nitrogen atoms.

1 - 27 . (canceled)  
   
   
       28 . A structure of a MOS transistor, comprising: 
 a substrate comprising a plurality of diffusion layers formed in a surface region of the substrate and a channel region between the diffusion layers;    a gate insulating film formed on the channel region including a first region comprising SiO 2  or SiON and a second region comprising SiN provided on the first region; and    a gate electrode formed on the gate insulating film,    wherein the gate insulating film further includes a third region, provided on the second region, containing nitrogen atoms and 1×10 18  cm −3  or more boron atoms.    
   
   
       29 . The structure according to  claim 29 , wherein the gate electrode is formed of a polysilicon containing boron atoms.  
   
   
       30 . The structure according  claim 29 , wherein the thickness of the gate insulating film is 2 nm or less.  
   
   
       31 . The structure according to  claim 29 , wherein, in a case of the first region being formed of SiON, the gate insulating film further includes a fourth region comprising SiON between the second region and the third region.  
   
   
       32 . The structure according to  claim 29  wherein a surface density of boron atoms is higher than that of nitrogen atoms in the third region.  
   
   
       33 . The structure according to  claim 29 , wherein the MOS transistor is a p-channel MOS transistor.