Magnetic random access memory, magnetic random access memory manufacturing method, and magnetic random access memory write method

Abstract

A magnetic random access memory includes first and second write wirings, the second write wiring having first and second crossing angles formed by crossing the first write wiring, a first magnetoresistive element having a first axis of easy magnetization directed to a side of the first crossing angle and having a first recording layer including first and second ferromagnetic layers and a first nonmagnetic layer, and a second magnetoresistive element being electrically connected to the first magnetoresistive element, having a second axis of easy magnetization directed to a side of the second crossing angle, and having a second recording layer including third and fourth ferromagnetic layers and a second nonmagnetic layer, wherein in a write operation, magnetizations in the first and second recording layers execute a toggle operation by using the first and second write wirings.

1 . A magnetic random access memory manufacturing method comprising: 
 forming a first write wiring;    forming a first electrode above the first write wiring;    forming a first material layer on the first electrode;    processing the first material layer to form a first magnetoresistive element having a first axis of easy magnetization directed in a first direction;    forming a interlayer around the first magnetoresistive element;    forming a second electrode on the first magnetoresistive element;    forming a second material layer on the second electrode;    processing the second material layer to form a second magnetoresistive element having a second axis of easy magnetization directed in a second direction different from the first direction; and    forming a second write wiring above the second magnetoresistive element.    
   
   
       2 . The method according to  claim 1 , wherein the second magnetoresistive element and the second write wiring are connected directly or through a contact.  
   
   
       3 . A magnetic random access memory manufacturing method comprising: 
 forming a first write wiring;    forming a first electrode above the first write wiring;    forming a first material layer, a contact layer, and a second material layer sequentially on the first electrode;    processing the first material layer, the contact layer, and the second material layer at once to form a first magnetoresistive element, a contact, and a second magnetoresistive element; and    forming a second write wiring above the second magnetoresistive element.    
   
   
       4 . The method according to  claim 3 , wherein the second magnetoresistive element and the second write wiring are connected directly or through a contact.  
   
   
       5 . A magnetic random access memory manufacturing method comprising: 
 forming a first write wiring and a first magnetoresistive element above a first substrate;    forming a contact connected to the first magnetoresistive element;    forming a second write wiring and a second magnetoresistive element above a second substrate different from the first substrate; and    bonding the first substrate and second substrate to electrically connect the first magnetoresistive element and second magnetoresistive element through the contact.