Combined semiconductor apparatus and a fabricating method thereof

Abstract

A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate.

1 - 27 . (canceled)  
   
   
       28 . A combined semiconductor apparatus comprising: 
 a substrate having a first terminal area on an upper surface of the substrate;    a thin semiconductor silicon film which is disposed on and bonded to the upper surface of the substrate, the thin semiconductor film including an integrated circuit, the thin semiconductor film having a second terminal area on an upper surface of the thin semiconductor film; and    at least one interconnecting line formed as a thin conductive film extending from the first terminal area to the second terminal area via the upper surface of the substrate and the upper surface of the thin semiconductor silicon film, thereby electrically connecting the first terminal area and the second terminal area.    
   
   
       29 . A method of fabricating a combined semiconductor apparatus comprising the steps of: 
 forming a substrate including a silicon substrate, a buried SiO 2  layer disposed on the silicon substrate, and a silicon film disposed on the buried SiO 2  layer;    forming an integrated circuit in the silicon film;    removing the buried SiO 2  layer with etching liquid and peeling off the silicon film from the silicon substrate; and    attaching the silicon film to a desired location of another substrate.