Long Wavelength Induim Arsenide Phosphide (InAsP) Quantum Well Active Region And Method For Producing Same

Abstract

An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.

1 . A method for producing an active region for a long wavelength light emitting device, the method comprising: 
 placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film;    forming a quantum well layer of InAsP; and    forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C.    
     
     
         2 . The method of  claim 1 , further comprising forming the quantum well layer of InAsP using a mole fraction of InAs 0.6 Pa 0.4 .  
     
     
         3 . The method of  claim 1 , further comprising using indium gallium phosphide (InGaP) to form the barrier layer.  
     
     
         4 . The method of  claim 3 , further comprising forming the barrier layer using a mole fraction of In 0.85 Ga 0.15 P.  
     
     
         5 . The method of  claim 1 , further comprising using indium gallium arsenide phosphide (InGaAsP) to form the barrier layer.  
     
     
         6 . The method of  claim 5 , further comprising forming the barrier layer using a mole fraction of In 0.8 Ga 0.2 As 0.1 P 0.9 .  
     
     
         7 . An active region for a long wavelength light emitting device, comprising: 
 a quantum well layer of InAsP located between a pair of barrier layers, where the quantum well layer and the barrier layers are formed in an organometallic vapor phase epitaxy (OMVPE) reactor at a temperature of less than 520 degrees C.    
     
     
         8 . The active region of  claim 7 , wherein the quantum well layer of InAsP is an alloy of InAs 0.6 P 0.4 .  
     
     
         9 . The active region of  claim 7 , wherein each barrier layer is indium gallium phosphide (InGaP).  
     
     
         10 . The active region of  claim 9 , wherein each barrier layer is In 0.85 Ga 0.15 P.  
     
     
         11 . The active region of  claim 7 , wherein each barrier layer is indium gallium arsenide phosphide (InGaAsP).  
     
     
         12 . The active region of  claim 11 , wherein each barrier layer is In 0.8 Ga 0.2 As 0.1 P 0.9 .  
     
     
         13 . A method for producing a long wavelength light emitting device using organometallic vapor phase epitaxy (OMVPE), comprising: 
 providing a substrate in an OMVPE reactor;    growing a first cladding layer of indium phosphide (InP);    growing a lower separate confinement heterostructure (SCH) layer of InGaAsP;    growing an active region comprising alternating layers of InGaP barrier layers and InAsP quantum well layers, the InQaP barrier layers and the InAsP quantum well layers grown at a temperature of less than 520 degrees C.;    growing an upper SCH layer of InGaAsP;    growing an etch stop layer of InP;    growing a second cladding layer of indium phosphide (InP); and    growing a cap layer of InGaAs.    
     
     
         14 . The method of  claim 13 , further comprising growing the quantum well layer of InAsP using a mole fraction of InAs 0.6 P 0.4 .  
     
     
         15 . The method of  claim 13 , further comprising using indium gallium phosphide (InGaP) to form the barrier layer.  
     
     
         16 . The method of  claim 15 , further comprising growing the barrier layer using a mole fraction of In 0.85 Ga 0.15 P.  
     
     
         17 . The method of  claim 13 , further comprising using indium gallium arsenide phosphide (InGaAsP) to form the barrier layer.  
     
     
         18 . The method of  claim 17 , further comprising forming the barrier layer using a mole fraction of In 0.8 Ga 0.2 As 0.1 P 0.9 .  
     
     
         19 . An active region for a long wavelength light emitting device, comprising: 
 a quantum well layer of InAsP located between a pair of barrier layers, where the quantum well layer and the barrier layers are formed in an organometallic vapor phase epitaxy (OMVPE) reactor at a temperature of less than 520 degrees C., thereby suppressing relaxation in the quantum well layer and the barrier layers, resulting in the quantum well layer and the barrier layers exhibiting low dislocation defect density.    
     
     
         20 . The active region of  claim 19 , wherein the quantum well layer of InAsP is an alloy of InAs 0.6 P 0.4 .