US2007252285A1PendingUtilityA1
Semiconductor device, electronic device, electronic apparatus, and method of manufacturing semiconductor device
Est. expiryMar 25, 2023(expired)· nominal 20-yr term from priority
H10W 90/754H10W 90/734H10W 90/732H10W 90/724H10W 90/722H10W 74/15H10W 74/00H10W 72/5363H10W 72/951H10W 72/884H10W 72/877H10W 72/551H10W 72/536H10W 72/354H10W 72/352H10W 72/325H10W 72/252H10W 72/251H10W 72/075H10W 72/074H10W 72/30H10W 70/60H10W 46/00H10W 74/129H10W 74/117H10W 72/20H10W 90/00H05K 2201/10734H05K 2201/10515H05K 2203/0545Y02P70/50H05K 1/141H05K 2201/10674H05K 2201/10977H05K 3/3489H05K 3/305H05K 3/3436
49
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Claims
Abstract
A method is provided to suppress detachment between semiconductor packages while preventing dislocation at the time of mounting a stacked semiconductor package on a motherboard. Semiconductor packages PK 1 and PK 2 are bonded to each other through protruding electrodes and resin is provided between the semiconductor packages PK 1 and PK 2. The resin is provided in the peripheries of the protruding electrodes so as to contact each of the protruding electrodes while not contacting a semiconductor chip.
Claims
exact text as granted — not AI-modified1 . A semiconductor device, comprising:
a first carrier substrate having a first land and a second land; a first semiconductor chip mounted on the first carrier substrate; a second carrier substrate having a third land and a fourth land and disposed above the first semiconductor chip; a first protruding electrode disposed between the first land and the third land; and a second protruding electrode disposed between the second land and the fourth land, the second land being disposed between the first land and the first semiconductor chip.
2 . The semiconductor device according to claim 1 , wherein the fourth land is disposed between the third land and the first semiconductor chip.
3 . The semiconductor device according to claim 1 , wherein the first land is separated from the second land.
4 . The semiconductor device according to claim 1 , wherein the third land is separated from the fourth land.
5 . The semiconductor device according to claim 1 , further comprising:
a first resin disposed between the first carrier substrate and the second carrier substrate and in contact with the first protruding electrode.
6 . The semiconductor device according to claim 1 , further comprising:
a second resin disposed between the first carrier substrate and the second carrier substrate and in contact with the second protruding electrode.
7 . The semiconductor device according to claim 1 , further comprising:
a first resin disposed between the first carrier substrate and the second carrier substrate and in contact with the first protruding electrode; and a second resin disposed between the first carrier substrate and the second carrier substrate and in contact with the second protruding electrode, the second resin being separated from the first resin.
8 . The semiconductor device according to claim 1 , further comprising:
a resin disposed between the first carrier substrate and the second carrier substrate.
9 . The semiconductor device according to claim 8 , wherein the resin is spaced apart from the first protruding electrode and the second protruding electrode.
10 . The semiconductor device according to claim 9 , wherein the resin is disposed along at least one side of the first carrier substrate.
11 . The semiconductor device according to claim 9 , wherein the resin is disposed around a perimeter of the first carrier substrate.
12 . The semiconductor device according to claim 9 , wherein the resin is disposed between the second land and the first semiconductor chip.Cited by (0)
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