US2007252285A1PendingUtilityA1

Semiconductor device, electronic device, electronic apparatus, and method of manufacturing semiconductor device

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Assignee: SHIOZAWA MASAKUNIPriority: Mar 25, 2003Filed: Jun 29, 2007Published: Nov 1, 2007
Est. expiryMar 25, 2023(expired)· nominal 20-yr term from priority
H10W 90/754H10W 90/734H10W 90/732H10W 90/724H10W 90/722H10W 74/15H10W 74/00H10W 72/5363H10W 72/951H10W 72/884H10W 72/877H10W 72/551H10W 72/536H10W 72/354H10W 72/352H10W 72/325H10W 72/252H10W 72/251H10W 72/075H10W 72/074H10W 72/30H10W 70/60H10W 46/00H10W 74/129H10W 74/117H10W 72/20H10W 90/00H05K 2201/10734H05K 2201/10515H05K 2203/0545Y02P70/50H05K 1/141H05K 2201/10674H05K 2201/10977H05K 3/3489H05K 3/305H05K 3/3436
49
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Claims

Abstract

A method is provided to suppress detachment between semiconductor packages while preventing dislocation at the time of mounting a stacked semiconductor package on a motherboard. Semiconductor packages PK 1 and PK 2 are bonded to each other through protruding electrodes and resin is provided between the semiconductor packages PK 1 and PK 2. The resin is provided in the peripheries of the protruding electrodes so as to contact each of the protruding electrodes while not contacting a semiconductor chip.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising: 
 a first carrier substrate having a first land and a second land;    a first semiconductor chip mounted on the first carrier substrate;    a second carrier substrate having a third land and a fourth land and disposed above the first semiconductor chip;    a first protruding electrode disposed between the first land and the third land; and    a second protruding electrode disposed between the second land and the fourth land,    the second land being disposed between the first land and the first semiconductor chip.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein the fourth land is disposed between the third land and the first semiconductor chip.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the first land is separated from the second land.  
   
   
       4 . The semiconductor device according to  claim 1 , wherein the third land is separated from the fourth land.  
   
   
       5 . The semiconductor device according to  claim 1 , further comprising: 
 a first resin disposed between the first carrier substrate and the second carrier substrate and in contact with the first protruding electrode.    
   
   
       6 . The semiconductor device according to  claim 1 , further comprising: 
 a second resin disposed between the first carrier substrate and the second carrier substrate and in contact with the second protruding electrode.    
   
   
       7 . The semiconductor device according to  claim 1 , further comprising: 
 a first resin disposed between the first carrier substrate and the second carrier substrate and in contact with the first protruding electrode; and    a second resin disposed between the first carrier substrate and the second carrier substrate and in contact with the second protruding electrode, the second resin being separated from the first resin.    
   
   
       8 . The semiconductor device according to  claim 1 , further comprising: 
 a resin disposed between the first carrier substrate and the second carrier substrate.    
   
   
       9 . The semiconductor device according to  claim 8 , wherein the resin is spaced apart from the first protruding electrode and the second protruding electrode.  
   
   
       10 . The semiconductor device according to  claim 9 , wherein the resin is disposed along at least one side of the first carrier substrate.  
   
   
       11 . The semiconductor device according to  claim 9 , wherein the resin is disposed around a perimeter of the first carrier substrate.  
   
   
       12 . The semiconductor device according to  claim 9 , wherein the resin is disposed between the second land and the first semiconductor chip.

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