Method and apparatus for doping semiconductors

Abstract

Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

1 . A method for doping semiconductor material, the method comprising: 
 mixing particles of semiconductor material with an aqueous doping solution comprising a polymer including a group III or group IV element and a solvent to form a mixture; and    heating the mixture to vaporize the solvent, thereby yielding particles of the semiconductor material which are substantially free from solvent and coated with the polymer to achieve a target resistivity of the semiconductor material.    
   
   
       2 . The method of  claim 1  wherein the mixture is heated to a temperature of between about 30° C. to about 110° C.  
   
   
       3 . The method of  claim 1  wherein the particles of the semiconductor material are silicon particles.  
   
   
       4 . The method of  claim 3  wherein the silicon particles are in the form of pellets.  
   
   
       5 . The method of  claim 3  wherein the silicon particles are in the form of angular shaped particles having sizes up to 1 cm in width.  
   
   
       6 . The method of  claim 3  wherein the silicon particles are in the form of spherical particles.  
   
   
       7 . The method of  claim 1  wherein the solvent has a boiling temperature between about 40° C. and about 110° C.  
   
   
       8 . The method of  claim 1  wherein the target resistivity is between 0.01 to 20 ohm-cm.  
   
   
       9 . The method of  claim 1  further comprising: 
 melting the particles of the semiconductor material substantially free from solvent to create a melt of the semiconductor material uniformly doped with the group III or group V element.