Alloy compositions and techniques for reducing intermetallic compound thickness and oxidation of metals and alloys

Abstract

Alloy compositions and techniques for reducing IMC thickness and oxidation of metals and alloys are disclosed. In one particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy or mixture consisting essentially of from about 90% to about 99.999% by weight indium and from about 0.001% to about 10% by weight germanium and unavoidable impurities. In another particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy consisting essentially of from about 90% to about 99.999% by weight gallium and from about 0.001% to about 10% by weight germanium and unavoidable impurities.

1 . A composition of alloy or mixture consisting essentially of from about 90% to about 99.999% by weight indium and from about 0.001% to about 10% by weight germanium and unavoidable impurities. 
   
   
       2 . A composition of alloy or mixture consisting essentially of from about 90% to about 99.999% by weight indium and from about 0.001% to about 10% by weight of one or more of germanium, manganese, phosphorus, and titanium. 
   
   
       3 . A composition of alloy consisting essentially of from about 90% to about 99.999% by weight gallium and from about 0.001% to about 10% by weight germanium and unavoidable impurities. 
   
   
       4 . A composition of alloy consisting essentially of from about 90% to about 99.999% by weight gallium and from about 0.001% to about 10% by weight of one or more of germanium, manganese, phosphorus, and titanium. 
   
   
       5 . A composition of alloy consisting essentially of gallium-indium alloy, gallium-indium-tin alloy, gallium-indium-tin-zinc alloy, cadmium, cadmium alloys, indium-lead alloy, indium-lead-silver alloy, mercury, mercury alloys, bismuth-tin alloy, indium-tin-bismuth alloy, and mixtures thereof containing from about 0.001% to about 10% by weight of one or more of germanium, manganese, phosphorus, and titanium and unavoidable impurities. 
   
   
       6 . A method of incorporating from about 0.001% to about 10% by weight of one or more dopants including one or more of germanium, manganese, phosphorus, and titanium in a metal or metal alloy comprising from about 90% to about 99.999% by weight gallium or indium, the method comprising:
 mixing the one or more dopants into the metal or metal alloy as a solution with heat.   
   
   
       7 . The method of  claim 6 , further comprising:
 cooling the mixture quickly to get finer dopant or intermetallic particles that diffuse faster than larger particles.   
   
   
       8 . A method of incorporating from about 0.001% to about 10% by weight of one or more dopants including one or more of germanium, manganese, phosphorus, and titanium in a metal or metal alloy comprising from about 90% to about 99.999% by weight gallium or indium, the method comprising:
 mixing the one or more dopants as particulates into a molten metal or metal alloy; and   cooling the molten metal or metal alloy with the one or more dopant particulates to form a metal or metal alloy composite.   
   
   
       9 . A method of incorporating from about 0.001% to about 10% by weight of one or more dopants including one or more of germanium, manganese, phosphorus, and titanium in a metal or metal alloy comprising from about 90% to about 99.999% by weight gallium or indium, the method comprising:
 mixing the one or more dopants into a solid form of the metal or metal alloy by mechanical force.   
   
   
       10 . A method of incorporating from about 0.001% to about 10% by weight of one or more dopants including one or more of germanium, manganese, phosphorus, and titanium in a metal or metal alloy comprising from about 90% to about 99.999% by weight gallium or indium, the method comprising:
 mixing the one or more dopants as particulates into a metal or metal alloy powder to form a metal or metal alloy powder mixture.   
   
   
       11 . A method of incorporating from about 0.001% to about 10% by weight of one or more dopants including one or more of germanium, manganese, phosphorus, and titanium in a metal or metal alloy comprising from about 90% to about 99.999% by weight gallium or indium, the method comprising:
 putting the one or more dopants as particulates in an interconnecting substrate with the metal or metal alloy.   
   
   
       12 . The method of  claim 11 , wherein the interconnecting substrate includes at least one of a pad on circuit board, a heat spreader, a heat sink, and a back side of component. 
   
   
       13 . A metallurgical interconnect material formed of the composition in any of  claims 1  to  5 . 
   
   
       14 . A thermal interface material formed of the composition in any of  claims 1  to  5 . 
   
   
       15 . The thermal interface material of  claim 14 , further comprising one or more of a phase change material, a thermally conductive gel, a thermally conductive tape, and a thermal grease. 
   
   
       16 . A thermally conductive filler formed of the composition in any of  claims 1  to  5 . 
   
   
       17 . A thermally conductive medium formed of the composition in any of  claims 1  to  5 .