Apparatus for processing substrate and method of doing the same

Abstract

An apparatus for processing a substrate includes a gas-atmosphere applying unit for applying gas atmosphere to the substrate, and a light-exposure unit for exposing the substrate to light through a lower surface of the substrate.

1 . An apparatus for processing a substrate, comprising:
 a gas-atmosphere applying unit for applying gas atmosphere to said substrate; and   a light-exposure unit for exposing said substrate to light through a lower surface of said substrate.   
     
     
         2 . An apparatus for processing a substrate, comprising:
 a light-exposure unit for exposing said substrate to light through a lower surface of said substrate; and   a chemical-solution applying unit for applying chemical solution to said substrate.   
     
     
         3 . The apparatus as set forth in  claim 1 , further comprising:
 a substrate carrier for carrying said substrate; and   a chemical-solution applying unit for applying chemical solution to said substrate.   
     
     
         4 . The apparatus as set forth in  claim 1 , further comprising:
 a substrate carrier for carrying said substrate; and   a substrate-temperature controlling unit for controlling a temperature of said substrate.   
     
     
         5 . The apparatus as set forth in  claim 4 , further comprising a chemical-solution applying unit for applying chemical solution to said substrate. 
     
     
         6 . The apparatus as set forth in  claim 1 , wherein said gas-atmosphere applying unit includes a temperature controller which keeps said substrate at a temperature in the range of 15 to 40 degrees centigrade both inclusive. 
     
     
         7 . An apparatus for processing a substrate, comprising:
 a substrate carrier for carrying said substrate;   a gas-atmosphere applying unit for applying gas atmosphere to said substrate;   a third processing unit for applying a third removal step to said substrate; and   a controller for controlling said substrate carrier, said gas-atmosphere applying unit and said third processing unit such that a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, and said third removal step to be carried out by said third processing unit are carried out in this order.   
     
     
         8 . The apparatus as set forth in  claim 7 , further comprising a substrate-temperature controlling unit for controlling a temperature of said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         9 . The apparatus as set forth in  claim 8 , further comprising a substrate-heating unit for heating said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         10 . The apparatus as set forth in  claim 9 , further comprising a second substrate-temperature controlling unit for controlling a temperature of said substrate after said substrate was heated by said substrate-heating unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, and said second substrate-temperature controlling unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, and a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit are carried out in this order. 
     
     
         11 . The apparatus as set forth in  claim 10 , further comprising a second substrate-heating unit for heating said substrate after said third removal step was applied to said substrate by said third processing unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, said second substrate-temperature controlling unit, and said second substrate-heating unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit, and a step of heating said substrate, to be carried out by said second substrate-heating unit are carried out in this order. 
     
     
         12 . The apparatus as set forth in  claim 7 , further comprising a first removal processing unit for applying a first removal step to said substrate. 
     
     
         13 . The apparatus as set forth in  claim 12 , further comprising a substrate-temperature controlling unit for controlling a temperature of said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         14 . The apparatus as set forth in  claim 13 , further comprising a substrate-heating unit for heating said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         15 . The apparatus as set forth in  claim 14 , further comprising a second substrate-temperature controlling unit for controlling a temperature of said substrate after said substrate was heated by said substrate-heating unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, and said second substrate-temperature controlling unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, and a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit are carried out in this order. 
     
     
         16 . The apparatus as set forth in  claim 15 , further comprising a second substrate-heating unit for heating said substrate after said third removal step was applied to said substrate by said third processing unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, said second substrate-temperature controlling unit, and said second substrate-heating unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit, and a step of heating said substrate, to be carried out by said second substrate-heating unit are carried out in this order. 
     
     
         17 . The apparatus as set forth in  claim 12 , further comprising a second processing unit for applying a second removal step to said substrate. 
     
     
         18 . The apparatus as set forth in  claim 17 , further comprising a substrate-temperature controlling unit for controlling a temperature of said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         19 . The apparatus as set forth in  claim 18 , further comprising a substrate-heating unit for heating said substrate, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, and said third processing unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, and said third removal step to be carried out by said third processing unit are carried out in this order. 
     
     
         20 . The apparatus as set forth in  claim 19 , further comprising a second substrate-temperature controlling unit for controlling a temperature of said substrate after said substrate was heated by said substrate-heating unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, and said second substrate-temperature controlling unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, and a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit are carried out in this order. 
     
     
         21 . The apparatus as set forth in  claim 20 , further comprising a second substrate-heating unit for heating said substrate after said third removal step was applied to said substrate by said third processing unit, and wherein said controller controls said substrate carrier, said substrate-temperature controlling unit, said gas-atmosphere applying unit, said substrate-heating unit, said third processing unit, said second substrate-temperature controlling unit, and said second substrate-heating unit such that a step of controlling a temperature of said substrate, to be carried out by said substrate-temperature controlling unit, a step of applying gas atmosphere to said substrate, to be carried out by said gas-atmosphere applying unit, a step of heating said substrate, to be carried out by said substrate-heating unit, said third removal step to be carried out by said third processing unit, a step of controlling a temperature of said substrate, to be carried out by said second substrate-temperature controlling unit, and a step of heating said substrate, to be carried out by said second substrate-heating unit are carried out in this order. 
     
     
         22 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of a first chemical-solution applying unit for applying chemical solution to said substrate. 
     
     
         23 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of an ashing unit for applying an ashing step to said substrate. 
     
     
         24 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of a first chemical-solution applying unit for applying first chemical solution to said substrate, and a second chemical-solution applying unit for applying second chemical solution to said substrate, and wherein said controller controls said first and second chemical-solution applying units such that a step of applying said first chemical solution to said substrate and a step of applying second chemical solution to said substrate are carried out in this order. 
     
     
         25 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of a chemical-solution applying unit for applying first chemical solution to said substrate, and further for applying second chemical solution to said substrate, and wherein said controller controls said chemical-solution applying unit such that a step of applying said first chemical solution to said substrate and a step of applying second chemical solution to said substrate are carried out in this order. 
     
     
         26 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of an ashing unit for applying an ashing step to said substrate, and a second chemical-solution applying unit for applying second chemical solution to said substrate, and wherein said controller controls said ashing unit and said second chemical-solution applying unit such that said ashing step and a step of applying said second chemical solution to said substrate are carried out in this order. 
     
     
         27 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of an ashing/chemical-solution-applying unit for applying an ashing step to said substrate, and further for applying second chemical solution to said substrate, and wherein said controller controls said ashing/chemical-solution-applying unit such that said ashing step and a step of applying said second chemical solution to said substrate are carried out in this order. 
     
     
         28 . The apparatus as set forth in  claim 17 , wherein at least one of said first and second removal steps comprises a step of developing an organic film pattern formed on said substrate through the use of chemical solution having a function of developing said organic film pattern, and wherein at least one of said first and second processing units is comprised of a developing unit for developing said organic film pattern. 
     
     
         29 . The apparatus as set forth in  claim 1 , wherein at least one of said substrate-temperature controlling unit and said gas-atmosphere applying unit includes a temperature controller which keeps said substrate at a temperature in the range of 20 to 30 degrees centigrade both inclusive or at a temperature equal to or higher than 30 degrees centigrade. 
     
     
         30 . The apparatus as set forth in  claim 1 , wherein at least one of said substrate-temperature controlling unit and said gas-atmosphere applying unit includes a temperature controller which keeps said substrate at a temperature in the range of 15 to 50 degrees centigrade both inclusive or at a temperature equal to or higher than 50 degrees centigrade. 
     
     
         31 . The apparatus as set forth in  claim 1 , wherein at least one of said substrate-temperature controlling unit and said gas-atmosphere applying unit includes a temperature controller which keeps said substrate at a temperature in the range of ±2 degrees centigrade of a target temperature. 
     
     
         32 . The apparatus as set forth in  claim 1 , wherein at least one of said substrate-temperature controlling unit and said gas-atmosphere applying unit includes a temperature controller which keeps said substrate at a temperature in the range of ±1 degrees centigrade of a target temperature. 
     
     
         33 . The apparatus as set forth in  claim 1 , wherein said gas-atmosphere applying unit includes a chamber into which gas to be applied to said substrate is supplied, and a stage for putting said substrate in said chamber. 
     
     
         34 . The apparatus as set forth in  claim 34 , further comprising a solution bath in which a solution is evaporated by being heated, as means for supplying said gas into said chamber. 
     
     
         35 . The apparatus as set forth in  claim 34 , further comprising a bubbling bath in which inert gas is bubbled into a solution, as means for supplying said gas into said chamber. 
     
     
         36 . The apparatus as set forth in  claim 33 , wherein said solution bath is situated outside of said gas-atmosphere applying unit. 
     
     
         37 . The apparatus as set forth in  claim 7 , wherein said third processing unit is comprised of a unit for applying a chemical solution to an organic film pattern formed on said substrate. 
     
     
         38 . The apparatus as set forth in  claim 12 , wherein said first processing unit is comprised of a unit for applying a chemical solution to an organic film pattern formed on said substrate. 
     
     
         39 . The apparatus as set forth in  claim 17 , wherein said second processing unit is comprised of a unit for applying a chemical solution to an organic film pattern formed on said substrate. 
     
     
         40 . The apparatus as set forth in  claim 1 , wherein said gas-atmosphere applying unit applies gas atmosphere to an organic film pattern formed on said substrate. 
     
     
         41 . The apparatus as set forth in  claim 28 , wherein said developing unit develops an organic film pattern formed on said substrate. 
     
     
         42 . The apparatus as set forth in  claim 37 , wherein said third processing unit uses a chemical solution containing at least one of acid chemical, organic solvent, and alkaline chemical. 
     
     
         43 . The apparatus as set forth in  claim 38 , wherein said first processing unit uses a chemical solution containing at least one of acid chemical, organic solvent, and alkaline chemical. 
     
     
         44 . The apparatus as set forth in  claim 39 , wherein said second processing unit uses a chemical solution containing at least one of acid chemical, organic solvent, and alkaline chemical. 
     
     
         45 . The apparatus as set forth in  claim 42 , wherein said third processing unit is comprised of a developing unit which carries out, as said third removal step, a step of developing an organic film pattern formed on said substrate through the use of a developing agent. 
     
     
         46 . The apparatus as set forth in  claim 43 , wherein said first processing unit is comprised of a developing unit which carries out, as said first removal step, a step of developing an organic film pattern formed on said substrate through the use of a developing agent. 
     
     
         47 . The apparatus as set forth in  claim 44 , wherein said second processing unit is comprised of a developing unit which carries out, as said second removal step, a step of developing an organic film pattern formed on said substrate through the use of a developing agent. 
     
     
         48 . The apparatus as set forth in  claim 34 , further comprising at least one of a first light-exposure unit and a second light-exposure unit, said first light-exposure unit exposing a portion of an organic film pattern formed on said substrate to light, said portion covering a predetermined area of said substrate, said second light-exposure unit exposing said portion to light through a lower surface of said substrate. 
     
     
         49 . The apparatus as set forth in  claim 48 , wherein said portion of said organic film pattern is exposed to light by radiating light entirely over said portion or by scanning said portion with spot-light. 
     
     
         50 . The apparatus as set forth in  claim 48 , wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate. 
     
     
         51 . The apparatus as set forth in  claim 48 , wherein said organic film pattern is exposed to at least one of ultra-violet rays, fluorescence, and natural light. 
     
     
         52 . The apparatus as set forth in  claim 1 , further comprising an ashing unit for ashing said substrate. 
     
     
         53 . The apparatus as set forth in  claim 52 , wherein said ashing unit etches films formed on said substrate by at least one of plasma, ozone and ultra-violet rays. 
     
     
         54 . The apparatus as set forth in  claim 1 , wherein an order in which said units are operated is variable. 
     
     
         55 . The apparatus as set forth in  claim 2 , wherein an order in which said units are operated is variable. 
     
     
         56 . The apparatus as set forth in  claim 7 , wherein an order in which said units are operated is variable. 
     
     
         57 . The apparatus as set forth in  claim 1 , wherein an order in which said units are operated is fixed. 
     
     
         58 . The apparatus as set forth in  claim 2 , wherein an order in which said units are operated is fixed. 
     
     
         59 . The apparatus as set forth in  claim 7 , wherein an order in which said units are operated is fixed. 
     
     
         60 . The apparatus as set forth in  claim 1 , wherein conditions in accordance with which said units are operated are variable. 
     
     
         61 . The apparatus as set forth in  claim 2 , wherein conditions in accordance with which said units are operated are variable. 
     
     
         62 . The apparatus as set forth in  claim 7 , wherein conditions in accordance with which said units are operated are variable. 
     
     
         63 . The apparatus as set forth in  claim 1 , wherein said apparatus includes a plurality of common units. 
     
     
         64 . The apparatus as set forth in  claim 2 , wherein said apparatus includes a plurality of common units. 
     
     
         65 . The apparatus as set forth in  claim 7 , wherein said apparatus includes a plurality of common units. 
     
     
         66 . The apparatus as set forth in  claim 63 , wherein substrates are in different directions from one another in a plane defined by said substrate during being processed in said common units. 
     
     
         67 . The apparatus as set forth in  claim 64 , wherein substrates are in different directions from one another in a plane defined by said substrate during being processed in said common units. 
     
     
         68 . The apparatus as set forth in  claim 65 , wherein substrates are in different directions from one another in a plane defined by said substrate during being processed in said common units. 
     
     
         69 . The apparatus as set forth in  claim 66 , wherein substrates are oppositely directed in a plane defined by said substrate during being processed in said common units. 
     
     
         70 . The apparatus as set forth in  claim 67 , wherein substrates are oppositely directed in a plane defined by said substrate during being processed in said common units. 
     
     
         71 . The apparatus as set forth in  claim 68 , wherein substrates are oppositely directed in a plane defined by said substrate during being processed in said common units. 
     
     
         72 . The apparatus as set forth in  claim 1 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in a plane defined by said substrate in each of times. 
     
     
         73 . The apparatus as set forth in  claim 2 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in a plane defined by said substrate in each of times. 
     
     
         74 . The apparatus as set forth in  claim 7 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed differently in a plane defined by said substrate in each of times. 
     
     
         75 . The apparatus as set forth in  claim 1 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in a plane defined by said substrate in each of times. 
     
     
         76 . The apparatus as set forth in  claim 2 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in a plane defined by said substrate in each of times. 
     
     
         77 . The apparatus as set forth in  claim 7 , wherein said substrate is processed a plurality of times in at least one of said units with said substrate being directed oppositely in a plane defined by said substrate in each of times. 
     
     
         78 . The apparatus as set forth in  claim 1 , wherein said substrate is processed in at least one of said units in a first direction and in a second direction different from said first direction. 
     
     
         79 . The apparatus as set forth in  claim 2 , wherein said substrate is processed in at least one of said units in a first direction and in a second direction different from said first direction. 
     
     
         80 . The apparatus as set forth in  claim 7 , wherein said substrate is processed in at least one of said units in a first direction and in a second direction different from said first direction. 
     
     
         81 . The apparatus as set forth in  claim 78 , wherein said first and second directions are opposite to each other. 
     
     
         82 . The apparatus as set forth in  claim 79 , wherein said first and second directions are opposite to each other. 
     
     
         83 . The apparatus as set forth in  claim 80 , wherein said first and second directions are opposite to each other. 
     
     
         84 . The apparatus as set forth in  claim 1 , wherein said apparatus has a function of prevent at least one of explosion and inflammation thereof. 
     
     
         85 . The apparatus as set forth in  claim 2 , wherein said apparatus has a function of prevent at least one of explosion and inflammation thereof. 
     
     
         86 . The apparatus as set forth in  claim 7 , wherein said apparatus has a function of prevent at least one of explosion and inflammation thereof. 
     
     
         87 . The apparatus as set forth in  claim 1 , wherein said gas-applying unit has a function of prevent at least one of explosion and inflammation thereof. 
     
     
         88 . The apparatus as set forth in  claim 7 , wherein said gas-applying unit has a function of prevent at least one of explosion and inflammation thereof. 
     
     
         89 . The apparatus as set forth in  claim 1 , further comprising an etching unit for etching said substrate. 
     
     
         90 . The apparatus as set forth in  claim 2 , further comprising an etching unit for etching said substrate. 
     
     
         91 . The apparatus as set forth in  claim 7 , further comprising an etching unit for etching said substrate. 
     
     
         92 . The apparatus as set forth in  claim 2 , wherein said chemical-solution applying unit is comprised of an etching unit which etches an underlying film located below an organic film pattern formed on said substrate through the use of chemical solution to thereby pattern said organic film pattern with said organic film pattern being used as a mask. 
     
     
         93 . A method of processing an organic film pattern formed on a substrate, comprising, in sequence of:
 a fusion/deformation step of fusing and thereby deforming said organic film pattern; and   a third removal step of removing at least a part of the fused and deformed organic film pattern.   
     
     
         94 . The method as set forth in  claim 93 , further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step. 
     
     
         95 . The method as set forth in  claim 94 , further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step. 
     
     
         96 . The method as set forth in  claim 95 , further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said fusion/deformation step. 
     
     
         97 . The method as set forth in  claim 93 , further comprising a first removal step of removing at least one of an alterated layer and a deposited layer formed on a surface of said organic film pattern, said first removal step being carried out before said fusion/deformation step. 
     
     
         98 . The method as set forth in  claim 97 , further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step. 
     
     
         99 . The method as set forth in  claim 98 , further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step. 
     
     
         100 . The method as set forth in  claim 99 , further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said first removal step. 
     
     
         101 . The method as set forth in  claim 93 , further comprising a first removal step of removing at least one of an alterated layer and a deposited layer formed on a surface of said organic film pattern, and a second removal step of removing a part of said organic film pattern, said first removal step being carried out before said fusion/deformation step, said second removal step being carried out after said first removal step and before said fusion/deformation step. 
     
     
         102 . The method as set forth in  claim 101 , further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step. 
     
     
         103 . The method as set forth in  claim 102 , further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step. 
     
     
         104 . The method as set forth in  claim 103 , further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said first removal step. 
     
     
         105 . The method as set forth in  claim 93 , further comprising a substrate-temperature controlling step of keeping constant a temperature at which said substrate is processed, said substrate-temperature controlling step being carried out immediately before said fusion/deformation step. 
     
     
         106 . The method as set forth in  claim 93 , further comprising originally forming said organic film pattern on said substrate by printing or by photolithography. 
     
     
         107 . The method as set forth in  claim 93 , further comprising originally forming a photosensitive organic film as said organic film pattern on said substrate. 
     
     
         108 . The method as set forth in  claim 107 , wherein said photosensitive organic film is comprised of one of a positive type photosensitive organic film and a negative type photosensitive organic film. 
     
     
         109 . The method as set forth in  claim 108 , wherein said positive type photosensitive organic film contains novolak resin as a principal constituent. 
     
     
         110 . The method as set forth in  claim 107 , wherein said photosensitive organic film is soluble in alkali, if exposed to light. 
     
     
         111 . The method as set forth in  claim 101 , wherein one of said alterated layer and said deposited layer is selectively removed in at least one of said first and second removal steps. 
     
     
         112 . The method as set forth in  claim 101 , wherein one of said alterated layer and said deposited layer is selectively removed, and a non-alterated portion of said organic film pattern is caused to appear in at least one of said first and second removal steps. 
     
     
         113 . The method as set forth in  claim 101 , wherein a non-alterated portion of said organic film pattern is partially removed in at least one of said first and second removal steps. 
     
     
         114 . The method as set forth in  claim 93 , wherein one of an alterated layer and a deposited layer formed on the fused and deformed organic film pattern, or one of an alterated layer and a deposited layer formed around the fused and deformed organic film pattern is selectively removed in said third removal step. 
     
     
         115 . The method as set forth in  claim 93 , wherein one of an alterated layer and a deposited layer formed on the fused and deformed organic film pattern, or one of an alterated layer and a deposited layer formed around the fused and deformed organic film pattern is selectively removed in said third removal step for causing the fused and deformed organic film pattern to appear. 
     
     
         116 . The method as set forth in  claim 93 , wherein one of an alterated layer and a deposited layer formed on the fused and deformed organic film pattern, or one of an alterated layer and a deposited layer formed around the fused and deformed organic film pattern is selectively removed in said third removal step, and the fused and deformed organic film pattern is partially removed. 
     
     
         117 . The method as set forth in  claim 101 , wherein at least a part of at least one of said first, second and third removal steps is comprised of a step of applying chemical solution to said organic film pattern. 
     
     
         118 . The method as set forth in  claim 101 , wherein at least a part of at least one of said first, second and third removal steps is comprised of a step of ashing said organic film pattern. 
     
     
         119 . The method as set forth in  claim 101 , wherein at least a part of at least one of said first, second and third removal steps is comprised of a step of ashing said organic film pattern, and a step of applying chemical solution to said organic film pattern. 
     
     
         120 . The method as set forth in  claim 93 , wherein said third removal step is comprised of a step of twice applying chemical solution to said organic film pattern through the use of two different chemical solutions. 
     
     
         121 . The method as set forth in  claim 96 , wherein at least one of water, acid and alkali having penetrated said organic film pattern before said organic film pattern was processed is removed in at least one of said first, second and third heating steps. 
     
     
         122 . The method as set forth in  claim 96 , wherein, when an adhesive force between said organic film pattern and said substrate or an underlying film is lowered, at least one of said first, second and third heating steps enhances said adhesive force. 
     
     
         123 . The method as set forth in  claim 93 , wherein a heating step for forming said organic film pattern is carried out at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked. 
     
     
         124 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern and said first heating step are carried out at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked. 
     
     
         125 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern, said first heating step, and said second heating step are carried out at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked. 
     
     
         126 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step are carried out at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked. 
     
     
         127 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step are carried out at a temperature in the range of 50 to 150 degrees centigrade both inclusive. 
     
     
         128 . The method as set forth in  claim 127 , wherein a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step are carried out at a temperature in the range of 100 to 130 degrees centigrade both inclusive. 
     
     
         129 . The method as set forth in  claim 96 , wherein said first heating step is carried out at a temperature lower than a temperature at which said second heating step is carried out. 
     
     
         130 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern and said first heating step are carried out at a temperature lower than a temperature at which said second heating step is carried out. 
     
     
         131 . The method as set forth in  claim 96 , wherein said second heating step is carried out at a temperature lower than a temperature at which said third heating step is carried out. 
     
     
         132 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern, said first heating step, and said second heating step are carried out at a temperature lower than a temperature at which said third heating step is carried out. 
     
     
         133 . The method as set forth in  claim 96 , wherein said first heating step is carried out at a temperature lower than a temperature at which said third heating step is carried out. 
     
     
         134 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern and said first heating step are carried out at a temperature lower than a temperature at which said third heating step is carried out. 
     
     
         135 . The method as set forth in  claim 96 , wherein a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step are carried out for 60 to 300 seconds both inclusive. 
     
     
         136 . The method as set forth in  claim 97 , wherein said alterated layer is comprised of a surface of said organic film pattern alterated by at least one of aging, thermal oxidation, heat curing, wet etching, dry etching, ashing, and deposition resulted from dry etching. 
     
     
         137 . The method as set forth in  claim 97 , wherein said deposited layer formed on said organic film pattern is caused by dry-etching. 
     
     
         138 . The method as set forth in  claim 93 , wherein an area of said organic film pattern is increased in said fusion/deformation step 
     
     
         139 . The method as set forth in  claim 93 , wherein organic film patterns disposed adjacent to each other are joined in said fusion/deformation step 
     
     
         140 . The method as set forth in  claim 93 , wherein said organic film pattern is planarized in said fusion/deformation step 
     
     
         141 . The method as set forth in  claim 93 , wherein said organic film pattern is deformed in said fusion/deformation step such that said organic film pattern is turned into an electrically insulating film covering therewith a circuit pattern formed on said substrate. 
     
     
         142 . The method as set forth in  claim 93 , wherein said organic film pattern is deformed in said fusion/deformation step by making contact with organic solution to cause fusion reflow. 
     
     
         143 . The method as set forth in  claim 142 , wherein said organic solution contains at least one of the following organic solvents (R indicates an alkyl group or a substitutional alkyl group, Ar indicates a phenyl group or an aromatic ring other than a phenyl group):
 (a) alcohol (R—OH);   (b) ether (R—O—R, Ar—O—R, Ar—O—Ar);   (3) ester;   (4) ketone; and   (5) glycol ether.   
     
     
         144 . The method as set forth in  claim 142 , wherein said organic film pattern is exposed to vapor of said organic solvent in said fusion reflow. 
     
     
         145 . The method as set forth in  claim 142 , wherein said organic film pattern is immersed into said organic solvent in said fusion reflow. 
     
     
         146 . The method as set forth in  claim 142 , wherein said fusion reflow is comprised of a step of applying gas atmosphere to said organic film pattern. 
     
     
         147 . The method as set forth in  claim 146 , wherein said step of applying gas atmosphere to said organic film patter is carried out in gas atmosphere of said organic solvent. 
     
     
         148 . The method as set forth in  claim 101 , wherein said first removal step is comprised of a first chemical-solution step of applying chemical solution to said organic film pattern. 
     
     
         149 . The method as set forth in  claim 101 , wherein at least one of said second and third removal steps is comprised of a second chemical-solution step of applying chemical solution to said organic film pattern. 
     
     
         150 . The method as set forth in  claim 101 , wherein at least one of said first, second and third removal steps is comprised of an ashing step of ashing said organic film pattern. 
     
     
         151 . The method as set forth in  claim 101 , wherein said first removal step is comprised of, in sequence of, an ashing step of ashing said organic film pattern, and a first chemical-solution step of applying chemical solution to said organic film pattern. 
     
     
         152 . The method as set forth in  claim 101 , wherein at least one of said second and third removal steps is comprised of, in sequence of, an ashing step of ashing said organic film pattern, and a second chemical-solution step of applying chemical solution to said organic film pattern. 
     
     
         153 . The method as set forth in  claim 101 , wherein said third removal step is comprised of a first chemical-solution step of applying chemical solution to said organic film pattern, and a second chemical-solution step of applying chemical solution to said organic film pattern. 
     
     
         154 . The method as set forth in  claim 101 , wherein each of said first, second and third removal steps is comprised of a step of applying chemical solution to said organic film pattern. 
     
     
         155 . The method as set forth in  claim 150 , wherein films formed on said substrate are etched in said ashing step through the use of at least one of plasma, ozone and ultraviolet rays. 
     
     
         156 . The method as set forth in  claim 101 , further comprising a light-exposure step of exposing said organic film pattern to light before at least one of said first, second and third removal steps. 
     
     
         157 . The method as set forth in  claim 148 , further comprising a light-exposure step of exposing said organic film pattern to light immediately before at least one of said first and second chemical-solution steps. 
     
     
         158 . The method as set forth in  claim 101 , further comprising a back light-exposure step of exposing said organic film pattern to light through a lower surface of said substrate, said back light-exposure step being carried out between said fusion/deformation step and said third removal step or between said fusion/deformation step and said second chemical-solution step. 
     
     
         159 . The method as set forth in  claim 158 , wherein said organic film pattern is exposed to light in said exposure step and said back light-exposure step only in an area associated with a predetermined area of said substrate. 
     
     
         160 . The method as set forth in  claim 159 , wherein said organic film pattern is exposed to light in said exposure step and said back light-exposure step in an area associated with a predetermined area of said substrate by radiating light entirely over said area or by scanning said area with spot-light. 
     
     
         161 . The method as set forth in  claim 159 , wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate. 
     
     
         162 . The method as set forth in  claim 159 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light in said exposure step and said back light-exposure step. 
     
     
         163 . The method as set forth in  claim 148 , wherein at least one of said first and second chemical-solution steps is comprised of a developing step of developing said organic film pattern through the use of chemical solution having a function of developing said organic film pattern. 
     
     
         164 . The method as set forth in  claim 148 , wherein at least one of said first and second chemical-solution steps is comprised of an overdeveloping step of carrying out N-th development of said organic film pattern through the use of chemical solution having a function of developing said organic film pattern, wherein N indicates an integer equal to or greater than two. 
     
     
         165 . The method as set forth in  claim 148 , wherein at least one of said first and second chemical-solution steps is comprised of a chemical-solution step of applying chemical solution to said organic film pattern, said chemical solution not having a function of developing said organic film pattern, but having a function of fusing said organic film pattern. 
     
     
         166 . The method as set forth in  claim 165 , wherein said chemical solution is comprised of a solution obtained by diluting separating agent. 
     
     
         167 . The method as set forth in  claim 163 , wherein said chemical solution having a function of developing said organic film pattern is comprised of alkaline aqueous solution containing TMAH (tetramethylammonium hydroxide) as a principal constituent, or inorganic alkaline aqueous solution. 
     
     
         168 . The method as set forth in  claim 167 , wherein said inorganic alkaline aqueous solution is one of NaOH aqueous solution and CaOH aqueous solution. 
     
     
         169 . The method as set forth in  claim 93 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another. 
     
     
         170 . The method as set forth in  claim 93 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another, and a thinner portion among said portions of said organic film pattern is further thinned in at least one of said first, second and third removal steps. 
     
     
         171 . The method as set forth in  claim 93 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another, and a thinner portion among said portions of said organic film pattern is removed in at least one of said first, second and third removal steps. 
     
     
         172 . The method as set forth in  claim 93 , wherein said organic film pattern is kept not exposed to light until said fusion/deformation step is carried out after said organic film pattern was originally formed on said substrate. 
     
     
         173 . The method as set forth in  claim 159 , wherein said organic film pattern is kept not exposed to light until said light-exposure step or back light-exposure step is carried out after said organic film pattern was originally formed on said substrate. 
     
     
         174 . The method as set forth in  claim 1 , further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is applied to said organic film pattern. 
     
     
         175 . The method as set forth in  claim 96 , further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step, said first removal step or said first heating step is applied to said organic film pattern. 
     
     
         176 . The method as set forth in  claim 95 , further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, after said second heating step, said third removal step or said third heating step was applied to said organic film pattern. 
     
     
         177 . The method as set forth in  claim 93 , further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is carried out or after said third removal step was carried out. 
     
     
         178 . The method as set forth in  claim 174 , wherein said underlying film is patterned to be tapered or step-liked in said patterning step. 
     
     
         179 . The method as set forth in  claim 174 , wherein said underlying film is comprised of a plurality of films, and some of said films are patterned into different patterns from one another in said patterning step. 
     
     
         180 . The method as set forth in  claim 148 , wherein said chemical solution used in said first chemical-solution step contains at least one of acid chemical, organic solvent, alkaline chemical, amine, organic solvent and amine, and alkaline chemical and amine. 
     
     
         181 . The method as set forth in  claim 149 , wherein said chemical solution used in said first chemical-solution step contains at least one of acid chemical, organic solvent, alkaline chemical, amine, organic solvent and amine, and alkaline chemical and amine. 
     
     
         182 . The method as set forth in  claim 181 , wherein said organic solvent contains at least amine. 
     
     
         183 . The method as set forth in  claim 181 , wherein said alkaline chemical contains at least amine and water. 
     
     
         184 . The method as set forth in  claim 181 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine, and picoline. 
     
     
         185 . The method as set forth in  claim 180 , wherein said chemical solution contains said amine in the range of 0.01 to 10 weight % both inclusive. 
     
     
         186 . The method as set forth in  claim 181 , wherein said chemical solution contains said amine in the range of 0.01 to 10 weight % both inclusive. 
     
     
         187 . The method as set forth in  claim 185 , wherein said chemical contains said amine in the range of 0.05 to 5 weight % both inclusive. 
     
     
         188 . The method as set forth in  claim 186 , wherein said chemical contains said amine in the range of 0.05 to 5 weight % both inclusive. 
     
     
         189 . The method as set forth in  claim 187 , wherein said chemical contains said amine in the range of 0.05 to 2.0 weight % both inclusive. 
     
     
         190 . The method as set forth in  claim 188 , wherein said chemical contains said amine in the range of 0.05 to 2.0 weight % both inclusive. 
     
     
         191 . The method as set forth in  claim 148 , wherein said chemical solution used in said first chemical-solution step contains anticorrosive. 
     
     
         192 . The method as set forth in  claim 149 , wherein said chemical solution used in said second chemical-solution step contains anticorrosive. 
     
     
         193 . The method as set forth in  claim 93 , wherein said organic film pattern is comprised of an organic film pattern to which at least one of a light-exposure step, a developing step, a wet etching step, and a dry etching step is applied, before processed. 
     
     
         194 . A method of fabricating an apparatus including a substrate processed in accordance with the method defined in  claim 93 . 
     
     
         195 . The method as set forth in  claim 194 , wherein said apparatus is comprised of one of a semiconductor device, a liquid crystal display device, an electro-luminescence (EL) display device, a field emission display device and a plasma display device. 
     
     
         196 . A chemical solution used in the first chemical-solution step defined in  claim 148 , containing at least one of acid chemical, organic solvent, alkaline chemical, amine, organic solvent and amine, and alkaline chemical and amine. 
     
     
         197 . A chemical solution used in the second chemical-solution step defined in  claim 149 , containing at least one of acid chemical, organic solvent, alkaline chemical, amine, organic solvent and amine, and alkaline chemical and amine. 
     
     
         198 . The chemical solution as set forth in  claim 196 , wherein said organic solvent contains at least amine. 
     
     
         199 . The chemical solution as set forth in  claim 197 , wherein said organic solvent contains at least amine. 
     
     
         200 . The chemical solution as set forth in  claim 196 , wherein said alkaline chemical contains at least amine and water. 
     
     
         201 . The chemical solution as set forth in  claim 197 , wherein said alkaline chemical contains at least amine and water. 
     
     
         202 . The chemical solution as set forth in  claim 196 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine, and picoline. 
     
     
         203 . The chemical solution as set forth in  claim 197 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxyl amine, diethylhydroxyl amine, diethylhydroxyl amine anhydride, pyridine, and picoline. 
     
     
         204 . The chemical solution as set forth in  claim 196 , wherein said chemical solution contains said amine in the range of 0.01 to 10 weight % both inclusive. 
     
     
         205 . The chemical solution as set forth in  claim 197 , wherein said chemical solution contains said amine in the range of 0.01 to 10 weight % both inclusive. 
     
     
         206 . The chemical solution as set forth in  claim 204 , wherein said chemical contains said amine in the range of 0.05 to 5 weight % both inclusive. 
     
     
         207 . The chemical solution as set forth in  claim 205 , wherein said chemical contains said amine in the range of 0.05 to 5 weight % both inclusive. 
     
     
         208 . The chemical solution as set forth in  claim 204 , wherein said chemical contains said amine in the range of 0.05 to 2.0 weight % both inclusive. 
     
     
         209 . The chemical solution as set forth in  claim 205 , wherein said chemical contains said amine in the range of 0.05 to 2.0 weight % both inclusive. 
     
     
         210 . The chemical solution as set forth in  claim 196 , wherein said chemical solution used in said first chemical-solution step contains anticorrosive. 
     
     
         211 . The chemical solution as set forth in  claim 197 , wherein said chemical solution used in said second chemical-solution step contains anticorrosive.