US2007278678A1PendingUtilityA1

Semiconductor device and method for fabricating the same

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Assignee: UCHIDA HIROKAZUPriority: Sep 9, 2004Filed: Jun 26, 2007Published: Dec 6, 2007
Est. expirySep 9, 2024(expired)· nominal 20-yr term from priority
Inventors:Hirokazu Uchida
H10P 72/74H10W 72/01255H10W 72/952H10W 72/923H10W 72/251H10W 72/29H10W 72/20H10W 72/012H10W 70/05H10W 74/129H10W 42/121H10W 72/9445H10W 72/942H10W 72/9223H10W 70/656H10W 72/244H10W 72/019H10D 62/117
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Claims

Abstract

A semiconductor device according to the present invention includes a semiconductor substrate, which comprises a first surface on which an electrode pad is formed, and a second surface arranged at an opposite side of the first surface; an external terminal formed on the first surface of the semiconductor substrate and is electrically connected to the electrode pad; and a sealing resin which seals the first surface so that a surface of the external terminal is exposed. An outer edge of the second surface has a chamfered portion, a surface of which is inclined by substantially 45 degrees from the second surface.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device, comprising: 
 a semiconductor substrate, which comprises a first surface on which an electrode pad is formed, and a second surface arranged at an opposite side of the first surface;    an external terminal formed on the first surface of the semiconductor substrate and is electrically connected to the electrode pad; and    a sealing resin which seals the first surface so that a surface of the external terminal is exposed, wherein    an outer edge of the second surface has a chamfered portion, a surface of which is inclined by substantially 45 degrees from the second surface.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein 
 the chamfered portion is formed to have a depth from the second surface of 50 to 150 μm (micro meters).    
     
     
         3 . A semiconductor device according to  claim 2 , further comprising: 
 a rewiring extending from the first surface, in which one end of the rewiring is connected to the electrode pad and the other end is connected to the external terminal.    
     
     
         4 . A semiconductor device according to  claim 3 , further comprising: 
 a ball electrode provided on the surface of the external terminal, which is exposed from the sealing resin.    
     
     
         5 . A semiconductor device according to  claim 1 , wherein 
 the external terminal is a post electrode, which comprises a side surface covered with the sealing resin and a top surface exposed from the sealing resin.    
     
     
         6 - 19 . (canceled)

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