Apparatus and Method for Terminating Probe Apparatus of Semiconductor Wafer

Abstract

A method and apparatus for terminating a probe that probes a semiconductor device with a signal cable from a tester is provided to connect layers of the probe to layers of the signal cable side by side. The probe and signal cable can be a co-axial or tri-axial probe and signal cable, respectively. A center conductive probe needle of the probe is disposed side by side with and electrically connects to a center signal conductor of the signal cable. A dielectric layer of the probe is disposed side by side with and connects to a dielectric layer of the signal cable. A conductive guard layer of the probe is disposed side by side with and electrically connects to a conductive dispersion/guard layer of the signal cable, and a sleeve of the probe is disposed side by side with and connects to a sleeve of the signal cable. In a tri-axial embodiment, a second dielectric layer of the probe is disposed side by side with and connects to a second dielectric layer of the signal cable.

1 . A probe apparatus having a probe that probes a semiconductor device and terminates with a signal cable from a tester, comprising: 
 a chassis;    a dielectric block mounted in the chassis for retaining the probe, the probe extending on the chassis and projecting from the dielectric block towards the semiconductor device at a distal end of the probe; and    a terminating device mounted on the chassis for terminating the proximal end of the probe with a distal end of the signal cable side by side.    
   
   
       2 . The apparatus of  claim 1 , wherein the probe is a co-axial shielded probe which comprises: 
 a center conductive probe needle;    a dielectric layer surrounding the center conductive probe needle;    a conductive guard layer surrounding the dielectric layer; and    a sleeve surrounding the conductive guard layer.    
   
   
       3 . The apparatus of  claim 2 , wherein the signal cable is a co-axial signal cable which comprises: 
 a center signal conductor;    a dielectric layer surrounding the center signal conductor;    a conductive dispersion/guard layer surrounding the dielectric layer; and    a sleeve surrounding the conductive dispersion/guard layer.    
   
   
       4 . The apparatus of  claim 3 , wherein the center conductive probe needle of the shielded probe is disposed side by side with and electrically connects to the center signal conductor of the signal cable, the dielectric layer of the shielded probe is disposed side by side with and connects to the dielectric layer of the signal cable, the conductive guard layer of the shielded probe is disposed side by side with and electrically connects to the conductive dispersion/guard layer of the signal cable, and the sleeve of the shielded probe is disposed side by side with and connects to the sleeve of the signal cable.  
   
   
       5 . The apparatus of  claim 1 , wherein the probe is a tri-axial shielded probe which comprises: 
 a center conductive probe needle;    a dielectric layer surrounding the center conductive probe needle;    a conductive guard layer surrounding the dielectric layer;    a second dielectric layer surrounding the conductive guard layer;    a guard layer surrounding the second dielectric layer; and    a sleeve surrounding the guard layer.    
   
   
       6 . The apparatus of  claim 5 , wherein the signal cable is a tri-axial signal cable which comprises: 
 a center signal conductor;    a dielectric layer surrounding the center signal conductor;    a conductive dispersion/guard layer surrounding the dielectric layer;    a second dielectric layer surrounding the conductive dispersion/guard layer;    a guard layer surrounding the second dielectric layer; and    a sleeve surrounding the guard layer.    
   
   
       7 . The apparatus of  claim 6 , wherein the center conductive probe needle of the shielded probe is disposed side by side with and electrically connects to the center signal conductor of the signal cable, the dielectric layer of the shielded probe is disposed side by side with and connects to the dielectric layer of the signal cable, the conductive guard layer of the shielded probe is disposed side by side with and electrically connects to the conductive dispersion/guard layer of the signal cable, the second dielectric layer of the shielded probe is disposed side by side with and connects to the second dielectric layer of the signal cable, the guard layer of the shielded probe is disposed side by side with and electrically connects to the guard layer of the signal cable; and the sleeve of the shielded probe is disposed side by side with and connects to the sleeve of the signal cable.  
   
   
       8 . The apparatus of  claim 4 , wherein the terminating device comprises a shrink tube for shrink-tubing the shielded probe and the signal cable.  
   
   
       9 . The apparatus of  claim 7 , wherein the terminating device comprises a shrink tube for shrink-tubing the shielded probe and the signal cable.  
   
   
       10 . The apparatus of  claim 1 , further comprising: 
 a plate disposed on bottom of the chassis;    a cover disposed on top of the chassis;    a dielectric spacer disposed between the chassis and the plate such that the plate is electrically isolated from the chassis and separately biased to minimize parasitic capacitance between the chassis and the semiconductor device.    
   
   
       11 . The apparatus of  claim 10 , wherein the plate is a heat shield for the semiconductor device and the chassis to improve test performance, and the cover is a shield for protecting the probe apparatus from interference that could disrupt measurements below 100 fA.  
   
   
       12 . The apparatus of  claim 1 , wherein the dielectric block is made of ceramic which comprises a conduit to retain the probe.  
   
   
       13 . The apparatus of  claim 12 , wherein the dielectric block comprises a plurality of sites for receiving a plurality of probes.  
   
   
       14 . The apparatus of  claim 12 , further comprising: 
 a purge tube inserted into the chassis to provide purge air in the probe apparatus.    
   
   
       15 . The apparatus of  claim 14 , further comprising a glass lens mounted on the dielectric block to prevent the purge air from cooling the semiconductor device.  
   
   
       16 . A method of terminating a probe that probes a semiconductor device with a signal cable, comprising the steps of: 
 stripping back at least one layer of the signal cable and at least one layer of the probe;    placing a proximal end of the probe along side of a distal end of the signal cable; and    shrinking the at least one layer of the signal cable and the at least one layer of the probe.    
   
   
       17 . The method of  claim 16 , wherein the step of placing the proximal end of the probe along side of the distal end of the signal cable comprises the steps of: 
 placing a center conductive probe needle of the probe side by side with and electrically connected to a center signal conductor of the signal cable;    placing a dielectric layer of the probe side by side with and connected to a dielectric layer of the signal cable;    placing a conductive guard layer of the probe side by side with and electrically connected to a conductive dispersion/guard layer of the signal cable; and    placing a sleeve of the probe side by side with and connected to a sleeve of the signal cable.    
   
   
       18 . The method of  claim 16 , wherein the step of placing the proximal end of the probe along side of the distal end of the signal cable comprises the steps of: 
 placing a center conductive probe needle of the probe side by side with and electrically connected to a center signal conductor of the signal cable;    placing a dielectric layer of the probe side by side with and connected to a dielectric layer of the signal cable;    placing a conductive guard layer of the probe side by side with and electrically connected to a conductive dispersion/guard layer of the signal cable;    placing a second dielectric layer of the probe side by side with and connected to a second dielectric layer of the signal cable; and    placing a sleeve of the probe side by side with and connected to a sleeve of the signal cable.    
   
   
       19 . An apparatus for terminating a probe that probes a semiconductor device with a signal cable, the apparatus comprising at least one layer of the probe and at least one layer of the signal cable connected side by side.  
   
   
       20 . The apparatus of  claim 19 , further comprising: 
 a shrink tube for shrink-tubing the probe and the signal cable; 
 wherein the probe comprises:  
 a center conductive probe needle;  
 a dielectric layer surrounding the center conductive probe needle;  
 a conductive guard layer surrounding the dielectric layer; and  
 a sleeve surrounding the conductive guard layer;  
   wherein the signal cable comprises: 
 a center signal conductor;  
 a dielectric layer surrounding the center signal conductor;  
 a conductive dispersion/guard layer surrounding the dielectric layer; and  
 a sleeve surrounding the conductive dispersion/guard layer; and  
   wherein the center conductive probe needle of the probe is disposed side by side with and electrically connects to the center signal conductor of the signal cable, the dielectric layer of the probe is disposed side by side with and connects to the dielectric layer of the signal cable, the conductive guard layer of the probe is disposed side by side with and electrically connects to the conductive dispersion/guard layer of the signal cable, and the sleeve of the probe is disposed side by side with and connects to the sleeve of the signal cable.    
   
   
       21 . The apparatus of  claim 20 , wherein the probe further comprises a second dielectric layer, and the signal cable further comprises a second dielectric layer, wherein the second dielectric layer of the probe is disposed side by side with and connects to the second dielectric layer of the signal cable.