X-ray diffraction-based scanning system

Abstract

An x-ray diffraction-based scanning method and system are described. The method includes screening for a particular substance in a container at a transportation center using a flat panel detector having a photoconductor x-ray conversion layer to detect x-rays diffracted by a particular substance in the container. The diffracted x-rays may be characterized in different ways, for examples, by wavelength dispersive diffraction and energy dispersive diffraction.

1 . An x-ray scanning system, comprising: 
 an x-ray source; and    means for increasing available power input to an x-ray source when the x-ray source is operating at less than 100% duty cycle.    
   
   
       2 . The x-ray scanning system of  claim 1 , wherein the means comprises an energy storage device.  
   
   
       3 . The x-ray scanning system of  claim 2 , wherein the energy storage device comprises a flywheel.  
   
   
       4 . The x-ray scanning system of  claim 2 , wherein the energy storage device at least doubles the input power to the source during source on-time.  
   
   
       5 . An apparatus, comprising: 
 an x-ray source; and    means for increasing available power input to an x-ray source when the x-ray source is operating at less than 100% duty cycle.    
   
   
       6 . The apparatus of  claim 5 , wherein the means comprises an energy storage device.  
   
   
       7 . The apparatus of  claim 6 , wherein the energy storage device comprises a flywheel.  
   
   
       8 . The apparatus of  claim 6 , wherein the energy storage device at least doubles the input power to the source during source on-time.  
   
   
       9 . A flat panel detector, comprising: 
 a substrate;    an amplifier layer disposed above the substrate;    an electrode layer disposed above the amplifier layer;    a conversion layer disposed above the electrode layer.    
   
   
       10 . The flat panel detector of  claim 9 , wherein the conversion layer is a direct conversion layer.  
   
   
       11 . The flat panel detector of  claim 10 , wherein the conversion layer comprises a semiconductor material to convert x-rays to electric charges directly.  
   
   
       12 . The flat panel detector of  claim 11 , wherein the conversion layer comprises a semiconductor material to convert x-rays to electric charges without an intermediate process of converting x-rays to visible light.  
   
   
       13 . The flat panel detector of  claim 10 , wherein the conversion layer comprises CZT.  
   
   
       14 . An x-ray diffraction scanning system, comprising: 
 a flat panel detector, comprising: 
 a semiconductor layer;  
 a first set of conducting lines coupled to the semiconductor layer; and  
 a second set of conduction lines coupled to the semiconductor layer;  
   a pulse measurement circuit coupled to the first and second set of conducting lines.    
   
   
       15 . The x-ray diffraction scanning system of  claim 14 , wherein the pulse measurements circuit comprises: 
 a first amplifier coupled to the first set of conducting lines;    a second amplifier circuit coupled to the second set of conducting lines;    a timing correlator coupled to the first and second amplifiers;    a pulse shaping amplifier coupled to the timing correlator; and    a peak detector coupled to the pulse shaping amplifier.    
   
   
       16 . The x-ray diffraction scanning system of  claim 14 , wherein the flat panel detector further comprises a substrate and wherein the first and second sets of conducting lines are disposed in the substrate.  
   
   
       17 . The x-ray diffraction scanning system of  claim 14 , wherein the flat panel detector further comprises a continuous contact layer disposed above the semiconductor layer.  
   
   
       18 . An apparatus, comprising: 
 a flat panel detector, comprising: 
 a semiconductor layer;  
 a first set of conducting lines coupled to the semiconductor layer; and  
 a second set of conduction lines coupled to the semiconductor layer;  
   a pulse measurement circuit coupled to the first and second set of conducting lines.    
   
   
       19 . The apparatus of  claim 18 , wherein the pulse measurements circuit comprises: 
 a first amplifier coupled to the first set of conducting lines;    a second amplifier circuit coupled to the second set of conducting lines;    a timing correlator coupled to the first and second amplifiers;    a pulse shaping amplifier coupled to the timing correlator; and    a peak detector coupled to the pulse shaping amplifier.    
   
   
       20 . The apparatus of  claim 18 , wherein the flat panel detector further comprises a substrate and wherein the first and second sets of conducting lines are disposed in the substrate.  
   
   
       21 . The apparatus of  claim 18 , wherein the flat panel detector further comprises a continuous contact layer disposed above the semiconductor layer.