Low-cost large-screen wide-angle fast-response liquid crystal display apparatus

Abstract

The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P—CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

1 . An active matrix vertical alignment liquid crystal display apparatus, characterized in that: an upper layer of a transparent pixel electrode is used for coating an insulating film onto said transparent pixel electrode for two types of liquid crystal orientation control electrodes connected to two different potentials, and only one TFT array substrate side is used for controlling an oblique direction of a vertical alignment negative dielectric constant anisotropic liquid crystal molecule completely, without the need of installing a bump or slit electrode onto a substrate corresponding to said TFT array substrate for a liquid crystal alignment control. 
   
   
       2 . An active matrix vertical alignment liquid crystal display apparatus, characterized in that: an upper layer of a slender slit transparent pixel electrode is used for installing an insulating film coated onto said transparent pixel electrode corresponding to a liquid crystal orientation control electrode for controlling a liquid crystal alignment, without the need of installing a bump or slit electrode onto a substrate corresponding to said TFT array substrate for a liquid crystal alignment control, and only one TFT array substrate side is used for controlling an oblique direction of a vertical alignment negative dielectric constant anisotropic liquid crystal molecule completely. 
   
   
       3 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein an upper layer of a transparent pixel electrode is used for installing an insulating film coated onto said transparent pixel electrode into two different types of liquid crystal orientation control electrodes connected to two different potentials, and one liquid crystal orientation control electrode is connected to the same potential of said transparent pixel electrode of said TFT array substrate. 
   
   
       4 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein an upper layer of a transparent pixel electrode is used for installing an insulating film coated onto said insulating film of said transparent pixel electrode and coupled with two types of liquid crystal orientation control electrodes of two different potentials, and said liquid crystal orientation control electrode at an end is coupled to a common electrode of a substrate with the same potential with respect to said TFT array substrate. 
   
   
       5 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said transparent pixel electrode   upper layer is coated by an insulating film of said transparent pixel electrode and coupled to two types of liquid crystal orientation control electrodes of two different potentials, and said liquid crystal orientation control electrode at an end is coupled to a common electrode of a substrate with the same potential with respect to said TFT array substrate, and said liquid crystal orientation control electrode at another end is coupled to a pixel electrode with the same potential of said TFT array substrate. 
   
   
       6 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said transparent pixel electrode is coated by an insulating film of said transparent pixel electrode, and coupled to two types of liquid crystal orientation control electrodes of two different potentials, and said liquid crystal orientation control electrode at an end is coupled to a common electrode of a substrate with the same potential with respect to said TFT array substrate, and said liquid crystal orientation control electrode at another end is coupled to a pixel electrode with the same potential of said TFT array substrate, and also connected to an orientation control electrode with the same potential of said pixel electrode of said TFT array substrate, and having a closer potential to a substrate with respect to said TFT array substrate than said common electrode coupled to an orientation control electrode at another end. 
   
   
       7 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said transparent pixel electrode is coated by an insulating film of said transparent pixel electrode and coupled to two types of liquid crystal orientation control electrodes of two different potentials, and said liquid crystal orientation control electrode at an end is coupled to a common electrode of a substrate with the same potential with respect to said TFT array substrate, and said liquid crystal orientation control electrode at another end is coupled to a pixel electrode with the same potential of said TFT array substrate, and said transparent pixel electrode and said video signal line are bent with 90 degrees for more than one time at the position proximate to the center of said pixel electrode of said two different types of orientation control electrodes for aligning said scan lines in a direction of ±45 degrees. 
   
   
       8 . The active matrix vertical alignment liquid crystal display apparatus of  claim 2 , wherein said upper layer of a slender slit transparent pixel electrode is formed for controlling a liquid crystal alignment, and coated by an insulating film of said transparent pixel electrode, and said liquid crystal orientation control electrode is coupled to a pixel electrode having the same potential as said TFT array substrate. 
   
   
       9 . The active matrix vertical alignment liquid crystal display apparatus of  claim 2 , wherein said upper layer of a slender slit transparent pixel electrode is formed for controlling a liquid crystal alignment, and coated by an insulating film of said transparent pixel electrode, and said liquid crystal orientation control electrode is coupled to a pixel electrode having the same potential as said TFT array substrate, and said video signal line and said transparent pixel electrode are formed at said slender slit for controlling a liquid crystal alignment inside said transparent pixel electrode, and bent with 90 degrees the position proximate to the center of said pixel electrode of said liquid crystal orientation control electrode for aligning said scan lines in a direction of ±45 degrees. 
   
   
       10 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said transparent pixel electrode is coated by an insulating film of said transparent pixel electrode, and coupled to two types of liquid crystal orientation control electrodes of two different potentials, and said two types of orientation control electrodes are formed by the same electrode material and on the same layer. 
   
   
       11 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said insulating film coated onto said transparent pixel electrode installs two types of liquid crystal orientation control electrodes of two different potentials, and said two types of orientation control electrodes are formed by the same electrode material and on the same layer, and said liquid crystal orientation control electrode at an end is coupled to a transparent pixel electrode having the same potential of said TFT array substrate, and said liquid crystal orientation control electrode is closer to a substrate with respect to said TFT array substrate than said liquid crystal orientation control electrode at another end having a different potential. 
   
   
       12 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said insulating film coated onto said transparent pixel electrode installs two types of liquid crystal orientation control electrodes coupled to two different potentials, and said two types of liquid crystal orientation control electrodes are installed at different layers. 
   
   
       13 . The active matrix vertical alignment liquid crystal display apparatus of  claim 1 , wherein said upper layer of said insulating film coated onto said transparent pixel electrode installs two types of liquid crystal orientation control electrodes of two different potentials, and said two types of liquid crystal orientation control electrodes are formed at different layers, and a liquid crystal orientation control electrode at an end is coupled to a transparent pixel electrode having the same potential of said TFT array substrate, and said liquid crystal orientation control electrode is closer to a substrate of said TFT array substrate than said liquid crystal orientation control electrode at another end connected to a different potential. 
   
   
       14 . A method of fabricating MVA active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed three times for the manufacture:
 (1) forming a gate electrode, a pixel electrode, a common electrode and a contact pad in said pixel electrode (wherein said photolithographic procedure using a halftone exposure method for the first time);   (2) forming a separate thin film semiconductor layer component, and a contact hole (wherein said photolithographic procedure using a halftone exposure method for the second time);   (3) forming a source electrode, a drain electrode and an orientation control electrode (wherein said photolithographic procedure using a general exposure method); such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method (wherein said film is formed at a terminal portion other than those of a gate electrode, a source electrode and a common electrode).   
   
   
       15 . A method of fabricating MVA active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed three times for the manufacture:
 (1) forming a gate electrode, a pixel electrode and a contact pad in said pixel electrode (wherein said photolithographic procedure uses a halftone exposure method for the first time);   (2) forming a separate thin film semiconductor layer component, and a contact hole (wherein said photolithographic procedure uses a halftone exposure method for the second time);   (3) forming a source electrode, a drain electrode, an orientation control electrode and a common electrode (wherein said photolithographic procedure uses a general exposure method); such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method (wherein said film is formed at a terminal portion other than those of a gate electrode, a source electrode and a common electrode).   
   
   
       16 . A MVA active matrix liquid crystal display apparatus, manufactured by a manufacturing method of  claim 14 . 
   
   
       17 . A MVA active matrix liquid crystal display apparatus, manufactured by a manufacturing method of  claim 15 , and characterized in that a basic unit pixel constitute an area of 2:1, and a video signal line (or a source electrode) is divided longitudinally into two, and said two divided pixel electrodes are coupled to each thin film transistor component respectively, and a source electrode of said two thin film transistor components is coupled to said video signal line that divides said pixel into two, and said two thin film transistor components are switched by a same scan line (or gate electrode), and said two divided pixel electrodes form a capacitor with different common electrode and insulating film aligned in parallel with said video signal wire, and said video signal wires are aligned in parallel on odd-numbered rows and even-numbered rows of said common electrode, and a voltage is applied to signals with different opposite polarities within a horizontal scan period (H period), and said video signal line in said two divided pixel electrodes is used for applying a voltage greater than an effective signal of large pixel electrode liquid crystal molecules on small pixel electrode liquid crystal molecules. 
   
   
       18 . A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture:
 (1) forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode (wherein said photolithographic procedure uses a halftone exposure method for the first time);   (2) forming a separate thin film semiconductor layer component, and a contact hole (wherein said photolithographic procedure uses a halftone exposure method for the second time);   (3) forming a source electrode (or video signal line), a drain electrode, a common electrode at the center of a pixel and a comb common electrode (wherein said third time of photolithographic procedure uses a halftone exposure method), such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method (wherein said film is formed at a terminal portion other than those of a gate electrode, a source electrode and a common electrode).   
   
   
       19 . A method of fabricating FFS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: said substrate is fabricated by applying a photolithographic procedure for three times:
 (1) forming a gate electrode, a pixel electrode and a contact pad in said pixel electrode (wherein a first time of applying said photolithographic procedure adopts a halftone exposure method);   (2) forming a separate thin film semiconductor layer component, and a contact hole (wherein a second time of applying said photolithographic procedure adopts a halftone exposure method); and   (3) forming a source electrode (or a video signal line), a drain electrode, a common electrode at the center of a pixel and a comb common electrode (wherein a third time of applying said photolithographic procedure adopts a halftone exposure method), such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method (wherein said film is formed at a terminal portion other than those of a gate electrode, a source electrode and a common electrode).   
   
   
       20 . A horizontal electric field active matrix liquid crystal display apparatus, manufactured by a method of  claim 18 . 
   
   
       21 . A FFS active matrix liquid crystal display apparatus, manufactured by a method of  claim 19 , characterized in that: an upper layer of a pixel electrode at a position proximate to the center of a pixel installs a common electrode in parallel with a video signal line by an insulating film, and a signal voltage is applied to odd-numbered rows and even-numbered rows of said common electrode in a horizontal scan period (H period) and having opposite polarities with each other, and said polarities are opposite to the polarities of said video signal line within said horizontal scan period (H period, and said video signal line of said screen is divided into two at the middle of said display screen, and the signals at said upper and lower video signal line have the same polarity, and said common electrode disposed at the center of said pixel integrates said display screen from top to bottom as a whole.