Reaction chamber for oxy-fluoridation

Abstract

In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.

1 - 8 . (canceled)  
     
     
         9 . A reaction chamber, comprising: 
 a stage;    a fluorine source supply provided above the stage; and    an oxygen plasma generator provided above the fluorine source supply.    
     
     
         10 . The reaction chamber as claimed in  claim 9 , wherein the fluorine source supply is a TEFLON® ring.  
     
     
         11 . The reaction chamber as claimed in  claim 9 , wherein the fluorine source supply is adapted to substantially uniformly distribute the fluorine over a sample region of the stage.  
     
     
         12 . The reaction chamber as claimed in  claim 9 , wherein the fluorine source supply and the oxygen plasma generator are adapted too supply fluorine and oxygen simultaneously.  
     
     
         13 . The reaction chamber as claimed in  claim 9 , wherein a plasma source gas used in the oxygen plasma generator is oxygen (O 2 ).  
     
     
         14 . The reaction chamber as claimed in  claim 9 , wherein a plasma source gas used in the oxygen plasma generator includes oxygen and argon (Ar).  
     
     
         15 . The reaction chamber as claimed in  claim 9 , wherein the fluorine source supply is annular.  
     
     
         16 . The reaction chamber as claimed in  claim 9 , wherein a the fluorine source supply exposes a sample region of the stage to the oxygen plasma generator.  
     
     
         17 . The reaction chamber as claimed in  claim 9 , wherein the stage, the fluorine source supply and the oxygen plasma generator are substantially coextensive.