Programmable semiconductor device

Abstract

A design structure for designing and manufacturing a programmable device. The design structure includes a substrate ( 10 ); an insulator ( 13 ) on the substrate; an elongated semiconductor material ( 12 ) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end ( 12 a ) is substantially wider than the second end ( 12 b ), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.

1 . A design structure instantiated in a machine readable medium for designing, manufacturing, or testing a programmable device, the design structure comprising: 
 a substrate;    an insulator on said substrate;    an elongated semiconductor material on said insulator, said elongated semiconductor material having first and second ends, and an upper surface,    said first end being substantially wider than said second end and comprising a plurality of integral triangular-shaped portions forming openings which face generally toward said second end, and    a metallic material on said upper surface, said metallic material being physically migratable along said upper surface responsive to an electrical current flowable through said semiconductor material and through said metallic material.    
     
     
         2 . The design structure as claimed in  claim 1 , 
 further comprising an energy source connected to said elongated semiconductor material, for causing an electrical current to flow through said elongated semiconductor material and through said metallic material, and for causing said metallic material to migrate along said upper surface.    
     
     
         3 . The design structure as claimed in  claim 1 , wherein said elongated semiconductor material comprises a doped polysilicon.  
     
     
         4 . The design structure as claimed in  claim 1 , wherein said metallic material comprises a metallic silicide.  
     
     
         5 . The design structure as claimed in  claim 1 , wherein said metallic material is selected from the group consisting of WSi 2 , NiSi 2 , NiSi, PtSi, PtSi 2 , and CoSi 2 .  
     
     
         6 . The design structure as claimed in  claim 1 , wherein said second end comprises an oblong-shaped portion.  
     
     
         7 . The design structure as claimed in  claim 1 , wherein said metallic material is disposed on the entire upper surface of said elongated semiconductor material.  
     
     
         8 . The design structure as claimed in  claim 1 , wherein said metallic material is a semiconductor alloy.  
     
     
         9 . The design structure as claimed in  claim 1 , wherein said elongated semiconductor material is N+ polysilicon and said metallic material is WSi 2 .  
     
     
         10 . The design structure as claimed in  claim 1 , wherein said elongated semiconductor material includes a central portion connecting said first end to said second end.  
     
     
         11 . The design structure as claimed in  claim 10 , wherein said central portion has a maximum substantially uniform width of less than approximately one micron.  
     
     
         12 . The design structure as claimed in  claim 10 , wherein said central portion has a length of less than approximately two microns.  
     
     
         13 . The design structure as claimed in  claim 10 , wherein said central portion and said second end form a T-shaped member.  
     
     
         14 . A final design structure instantiated in a machine readable medium for designing, manufacturing or testing a programmable device, 
 the final design structure comprising: 
 a substrate;  
 an insulator on said substrate;  
 an elongated semiconductor material on said insulator, said elongated semiconductor material having first and second ends, and an upper surface,  
 said first end being substantially wider than said second end and comprising a plurality of integral triangular-shaped portions, and  
 a metallic material on said upper surface, said metallic material being physically migratable along said upper surface responsive to an electrical current flowable through said semiconductor material and through said metallic material.  
   
     
     
         15 . The final design structure as claimed in  claim 14 , wherein the final design structure comprises a netlist which describes the programmable device.  
     
     
         16 . The final design structure as claimed in  claim 14 , wherein the final design structure resides on a GDS storage medium.  
     
     
         17 . The final design structure as claimed in  claim 14 , wherein the final design structure comprises programming information for the programmable device.