Photoresist with metal oxide nanoparticles

Abstract

Nanoscale UV absorbing particles are described that have high UV absorption cross sections while being effectively transparent to visible light. These particles can be used to shield individuals from harmful ultraviolet radiation. These particles can also be used in industrial processing especially to produce solid state electronic devices by creating edges of photoresist material with a high aspect ratio. The UV absorbing particles can also be used as photocatalysts that become strong oxidizing agents upon exposure to UV light. Laser pyrolysis provides an efficient method for the production of suitable particles.

1 . A photoresist composition comprising a photoactivated composition and particles comprising metal oxide, the particles having an average diameter from about 5 nm to about 150 nm.  
     
     
         2 . The photoresist composition of  claim 1  wherein the photoactivated composition comprises a polymer.  
     
     
         3 . The photoresist composition of  claim 2  wherein the particle are embedded in a matrix of the polymer.  
     
     
         4 . The photoresist composition of  claim 1  wherein the particles comprise TiO 2 , ZnO, ZnO 2 , or CeO 2 .  
     
     
         5 . The photoresist composition of  claim 1  wherein the particles have an average diameter from about 5 nm to about 50 nm.  
     
     
         6 . The photoresist composition of  claim 1  wherein the particles have an average diameter of less than about 100 nm and a diameter distribution such that at least about 95 percent of the particles have a diameter greater than about 60 percent of the average diameter and less than about 140 percent of the average diameter.  
     
     
         7 . A structure comprising a photoresist composition on a substrate, the photoresist composition comprising particles and the particles comprising metal oxide, the particles having an average diameter from about 5 nm to about 150 nm.  
     
     
         8 . The structure of  claim 7  wherein the photoresist comprises particles directly on the substrate with a photoactivated composition over the particles.  
     
     
         9 . The structure of  claim 7  wherein the photoresist comprises the particles within a polymer matrix.  
     
     
         10 . The structure of  claim 7  wherein the photoresist comprises a photoactivated composition on the substrate covered with a pattern of the particles.  
     
     
         11 . The structure of  claim 7  wherein the particles comprise TiO 2 , ZnO, ZnO 2 , or CeO 2 .  
     
     
         12 . The structure of  claim 7  wherein the particles have an average diameter from about 5 nm to about 50 nm.  
     
     
         13 . The structure of  claim 7  wherein the particles have an average diameter of less than about 100 nm and a diameter distribution such that at least about 95 percent of the particles have a diameter greater than about 60 percent of the average diameter and less than about 140 percent of the average diameter.  
     
     
         14 . The structure of  claim 7  wherein the photoresist is photoactived in a pattern.  
     
     
         15 . A method for patterning a material on a substrate, the method comprising irradiating a surface at selected location, the surface comprising a photoresist composition, the photoresist composition comprising particles and the particles comprising metal oxide, the particles having an average diameter from about 5 nm to about 150 nm.  
     
     
         16 . The method of  claim 15  wherein the irradiating is performed with UV light.  
     
     
         17 . The method of  claim 15  wherein the irradiation is performed through a mask.  
     
     
         18 . The method of  claim 15  wherein the photoresist comprises particles directly on the substrate with a photoactivated composition over the particles.  
     
     
         19 . The method of  claim 15  wherein the photoresist comprises the particles within a polymer matrix.  
     
     
         20 . The method of  claim 15  wherein the photoresist comprises a photoactivated composition on the substrate covered with a pattern of the particles.  
     
     
         21 . The method of  claim 15  wherein the particles comprise TiO 2 , ZnO, ZnO 2 , or CeO 2 .  
     
     
         22 . The method of  claim 15  wherein the particles have an average diameter from about 5 nm to about 50 nm.  
     
     
         23 . The method of  claim 15  wherein the particles have an average diameter of less than about 100 nm and a diameter distribution such that at least about 95 percent of the particles have a diameter greater than about 60 percent of the average diameter and less than about 140 percent of the average diameter.