Fin mask and method for fabricating saddle type fin using the same

Abstract

A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.

1 . A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising:
 a first fin mask of a line type; and   a second fin mask of an island type,   wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.   
     
     
         2 . The fin mask of  claim 1 , wherein the second fin mask has a rectangular shape overlapping the first fin mask. 
     
     
         3 . The fin mask of  claim 1 , wherein the second fin mask is formed in a rectangular shape overlapping the first fin mask, wherein portions of the second fin mask covering the ends of the active regions along the major axis have a larger surface area than the ends of the active regions. 
     
     
         4 . The fin mask of  claim 3 , wherein the portions of the second fin mask covering the ends of the active regions along the major axis are formed in a ball or an ellipse shape. 
     
     
         5 . A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising:
 a first fin mask of a line type; and   a second fin mask having openings,   wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.   
     
     
         6 . The fin mask of  claim 5 , wherein the openings of the second fin mask are formed in an island shape, wherein the island shape includes a jigsaw puzzle shape. 
     
     
         7 . A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising island-shaped openings exposing saddle type fin regions and covering the rest of the active regions. 
     
     
         8 . The fin mask of  claim 7 , wherein the openings are formed in a rectangular or an ellipse shape. 
     
     
         9 . A method for fabricating a saddle type fin, the method comprising:
 providing a substrate defining at least two active regions that have neighboring ends in a major axis;   forming an etch barrier pattern over the substrate, the etch barrier pattern exposing saddle type fin regions of the active regions and covering the rest of the active regions; and   etching the saddle type fin regions to form saddle type fins in a local damascene structure,   wherein forming the etch barrier pattern comprises forming a first fin mask and a second fin mask, and   wherein the first fin mask exposes the saddle type fin regions in a line pattern and the second fin mask covers the neighboring ends of the active regions.   
     
     
         10 . The method of  claim 9 , wherein the first fin mask is a line type and the second fin mask is an island type, the second fin mask being formed after the first fin mask is removed. 
     
     
         11 . The method of  claim 10 , wherein the second fin mask is formed in an island pattern comprising a rectangular shape overlapping the first fin mask, wherein portions of the second fin mask covering the ends of the active regions have a larger surface area than the ends of the active regions. 
     
     
         12 . The method of  claim 11 , wherein the portions of the second fin mask covering the ends of the active regions have a round shape. 
     
     
         13 . The method of  claim 10 , wherein the etch barrier pattern formed by the first and second fin masks in combination comprises an amorphous carbon pattern. 
     
     
         14 . The method of  claim 13 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the first fin mask;   etching the DARC layer using the second fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         15 . The method of  claim 13 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the second fin mask;   etching the DARC layer using the first fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         16 . The method of  claim 9 , wherein forming the etch barrier pattern comprises forming a first fin mask and a second fin mask in combination, wherein the first fin mask exposes the saddle type fin regions in a line shape and the second fin mask exposes the saddle type fin regions in an island pattern comprising a jigsaw puzzle shape and covers the neighboring ends of the active regions. 
     
     
         17 . The method of  claim 16 , wherein the etch barrier pattern formed by the first and second fin masks in combination comprises an amorphous carbon pattern. 
     
     
         18 . The method of  claim 17 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the first fin mask;   etching the DARC layer using the second fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         19 . The method of  claim 17 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   forming a polysilicon layer over the DARC layer;   etching the polysilicon layer using the second fin mask;   etching the DARC layer using the first fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         20 . The method of  claim 9 , wherein forming the etch barrier pattern comprises using a fin mask having openings exposing the saddle type fins and covering the rest regions. 
     
     
         21 . The method of  claim 20 , wherein the openings are formed in a rectangular or an ellipse shape. 
     
     
         22 . The method of  claim 20 , wherein the etch barrier pattern comprises an amorphous carbon pattern or a polysilicon pattern. 
     
     
         23 . The method of  claim 22 , wherein forming the amorphous carbon pattern comprises:
 forming an amorphous carbon layer;   forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;   etching the DARC layer using the fin mask; and   etching the amorphous carbon layer using the DARC layer.   
     
     
         24 . The method of  claim 22 , wherein forming the polysilicon pattern comprises:
 forming a polysilicon layer;   forming a dielectric anti-reflective coating (DARC) layer over the polysilicon layer;   etching the DARC layer using the fin mask; and   etching the polysilicon layer using the DARC layer.