Semiconductor device, method for manufacturing the same, and plating solution

Abstract

The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

1 - 50 . (canceled)  
   
   
       51 . An apparatus for manufacturing a semiconductor device, comprising: 
 a first plating unit for embedding an electrical conductor into recesses provided in a surface of a substrate;    a first polishing unit for polishing the electrical conductor from the surface of the substrate in which the electrical conductor is embedded;    a second plating unit for forming a protective film selectively on surfaces of exposed interconnects that define the electrical conductor, after the polishing; and    a second polishing unit for polishing the protective film.    
   
   
       52 . The apparatus for manufacturing a semiconductor device according to  claim 51 , further comprising: 
 a heat treatment unit for heat-treating the electrical conductor embedded in the substrate.    
   
   
       53 . The apparatus for manufacturing a semiconductor device according to  claim 51 , further comprising: 
 a third plating unit for forming a seed layer, which acts as a catalyst during formation of the protective film, selectively on the surfaces of the exposed interconnects prior to forming the protective film selectively on the surfaces of the exposed interconnects in said second plating unit.    
   
   
       54 . The apparatus for manufacturing a semiconductor device according to  claim 51 , further comprising: 
 a cleaning unit for cleaning a surface of the substrate which has been flattened by polishing in said first polishing unit.    
   
   
       55 . The apparatus for manufacturing a semiconductor device according to  claim 54 , wherein 
 said cleaning unit is for cleaning the surface of the substrate, which has been flattened by polishing in said first polishing unit, such that the surface is cleaned so that an electrical conductor contamination on an insulating film on the surface of the substrate is reduced to at most 5×10 5  atoms/cm 2 .