US2008012001A1PendingUtilityA1
Shaped articles comprising semiconductor nanocrystals and methods of making and using same
Est. expiryJul 12, 2026(~0 yrs left)· nominal 20-yr term from priority
Inventors:Jennifer Gillies
H10H 20/8512H10H 20/0361C30B 29/60C30B 7/00C09K 11/02C09K 11/565C09K 11/661C09K 11/883Y10S977/773Y10S977/834
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Claims
Abstract
A shaped article comprising a plurality of semiconductor nanocrystals. Devices incorporating shaped articles are also provided. Methods of manufacturing shaped articles by various molding processes are also provided.
Claims
exact text as granted — not AI-modified1 . A shaped article comprising a plurality of semiconductor nanocrystals.
2 . The shaped article of claim 1 , wherein the plurality of semiconductor nanocrystals comprises a PbS core.
3 . The shaped article of claim 1 , wherein the shaped article is a lens.
4 . The shaped article of claim 1 , wherein the shaped article is a light emitting diode cup.
5 . A light emitting diode comprising the shaped article of claim 3 .
6 . A light emitting diode comprising the shaped article of claim 4 .
7 . The shaped article of claim 1 , wherein the shaped article is an optical epoxy.
8 . The shaped article of claim 1 , wherein upon excitation the shaped article emits light in the infra-red range.
9 . The shaped article of claim 1 , wherein the shaped article is a layer of a solar cell.
10 . A solar cell comprising the shaped article of claim 9 .
11 . A method of manufacturing a shaped article comprising:
preparing a pre-form material by adding a plurality of semiconductor nanocrystals to a first material; and forming the pre-form material into a shape article.
12 . The method of claim 11 , wherein the first material is a matrix material.
13 . The method of claim 11 , wherein the first material is a polymer.
14 . The method of claim 11 , wherein the first material limits the diffusion rate of oxygen molecules to the surface of the plurality of semiconductor nanocrystals.
15 . The method of claim 11 , wherein the plurality of semiconductor nanocrystals is a plurality of two or more different semiconductor nanocrystals.
16 . The method of claim 11 , wherein preparing comprises:
dissolving a first matrix material in a solvent to form a first matrix material solution; dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a pre-form material.
17 . The method of claim 11 , wherein preparing comprises:
dissolving a first matrix material in a solvent to form a first matrix material solution; dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and micronizing the solid semiconductor nanocrystal composition to make a pre-form material.
18 . The method of claim 11 , wherein preparing comprises:
dissolving a first matrix material in a solvent to form a first matrix material solution; dissolving a plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal-first matrix material composite; and micronizing the solid semiconductor nanocrystal-first matrix material composite to form a micronized semiconductor nanocrystal-first matrix material composite; and dispersing the micronized semiconductor nanocrystal-first matrix material composite in a second matrix material to make a pre-form material.
19 . The device of claim 18 , wherein the first matrix material is a silica sol-gel.
20 . The device of claim 18 , wherein the second matrix material is an optical epoxy.
21 . The method of claim 11 , wherein preparing comprises:
dissolving a first matrix material in a solvent to form a first matrix material solution; dissolving a plurality of first semiconductor nanocrystals in the solvent and a plurality of second, different semiconductor nanocrystals in the solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and micronizing the solid semiconductor nanocrystal composition to make a pre-form material.
22 . The method of claim 11 , wherein preparing comprises:
adding a plurality of first semiconductor nanocrystals to a first matrix material; micronizing the first matrix material; adding a plurality of second, different semiconductor nanocrystals to a second matrix material; micronizing the second matrix material; and adding the micronized first matrix material and the micronized second matrix material to a base matrix material to make a pre-form material.
23 . The method of claim 11 , wherein forming the pre-form material comprises injection molding, extrusion molding, blow molding, compression molding, contact molding, impression molding, press molding, or resin transfer molding the pre-form material.
24 . The method of claim 23 , wherein forming the pre-form material comprises injection molding the pre-form material.Cited by (0)
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