US2008012001A1PendingUtilityA1

Shaped articles comprising semiconductor nanocrystals and methods of making and using same

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Assignee: EVIDENT TECHNOLOGIESPriority: Jul 12, 2006Filed: Jul 12, 2006Published: Jan 17, 2008
Est. expiryJul 12, 2026(~0 yrs left)· nominal 20-yr term from priority
H10H 20/8512H10H 20/0361C30B 29/60C30B 7/00C09K 11/02C09K 11/565C09K 11/661C09K 11/883Y10S977/773Y10S977/834
46
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Claims

Abstract

A shaped article comprising a plurality of semiconductor nanocrystals. Devices incorporating shaped articles are also provided. Methods of manufacturing shaped articles by various molding processes are also provided.

Claims

exact text as granted — not AI-modified
1 . A shaped article comprising a plurality of semiconductor nanocrystals. 
   
   
       2 . The shaped article of  claim 1 , wherein the plurality of semiconductor nanocrystals comprises a PbS core. 
   
   
       3 . The shaped article of  claim 1 , wherein the shaped article is a lens. 
   
   
       4 . The shaped article of  claim 1 , wherein the shaped article is a light emitting diode cup. 
   
   
       5 . A light emitting diode comprising the shaped article of  claim 3 . 
   
   
       6 . A light emitting diode comprising the shaped article of  claim 4 . 
   
   
       7 . The shaped article of  claim 1 , wherein the shaped article is an optical epoxy. 
   
   
       8 . The shaped article of  claim 1 , wherein upon excitation the shaped article emits light in the infra-red range. 
   
   
       9 . The shaped article of  claim 1 , wherein the shaped article is a layer of a solar cell. 
   
   
       10 . A solar cell comprising the shaped article of  claim 9 . 
   
   
       11 . A method of manufacturing a shaped article comprising:
 preparing a pre-form material by adding a plurality of semiconductor nanocrystals to a first material; and   forming the pre-form material into a shape article.   
   
   
       12 . The method of  claim 11 , wherein the first material is a matrix material. 
   
   
       13 . The method of  claim 11 , wherein the first material is a polymer. 
   
   
       14 . The method of  claim 11 , wherein the first material limits the diffusion rate of oxygen molecules to the surface of the plurality of semiconductor nanocrystals. 
   
   
       15 . The method of  claim 11 , wherein the plurality of semiconductor nanocrystals is a plurality of two or more different semiconductor nanocrystals. 
   
   
       16 . The method of  claim 11 , wherein preparing comprises:
 dissolving a first matrix material in a solvent to form a first matrix material solution;   dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution;   mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution;   evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a pre-form material.   
   
   
       17 . The method of  claim 11 , wherein preparing comprises:
 dissolving a first matrix material in a solvent to form a first matrix material solution;   dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution;   mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution;   evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and   micronizing the solid semiconductor nanocrystal composition to make a pre-form material.   
   
   
       18 . The method of  claim 11 , wherein preparing comprises:
 dissolving a first matrix material in a solvent to form a first matrix material solution;   dissolving a plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution;   mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution;   evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal-first matrix material composite; and   micronizing the solid semiconductor nanocrystal-first matrix material composite to form a micronized semiconductor nanocrystal-first matrix material composite; and   dispersing the micronized semiconductor nanocrystal-first matrix material composite in a second matrix material to make a pre-form material.   
   
   
       19 . The device of  claim 18 , wherein the first matrix material is a silica sol-gel. 
   
   
       20 . The device of  claim 18 , wherein the second matrix material is an optical epoxy. 
   
   
       21 . The method of  claim 11 , wherein preparing comprises:
 dissolving a first matrix material in a solvent to form a first matrix material solution;   dissolving a plurality of first semiconductor nanocrystals in the solvent and a plurality of second, different semiconductor nanocrystals in the solvent to form a semiconductor nanocrystal solution;   mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution;   evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and   micronizing the solid semiconductor nanocrystal composition to make a pre-form material.   
   
   
       22 . The method of  claim 11 , wherein preparing comprises:
 adding a plurality of first semiconductor nanocrystals to a first matrix material;   micronizing the first matrix material;   adding a plurality of second, different semiconductor nanocrystals to a second matrix material;   micronizing the second matrix material; and   adding the micronized first matrix material and the micronized second matrix material to a base matrix material to make a pre-form material.   
   
   
       23 . The method of  claim 11 , wherein forming the pre-form material comprises injection molding, extrusion molding, blow molding, compression molding, contact molding, impression molding, press molding, or resin transfer molding the pre-form material. 
   
   
       24 . The method of  claim 23 , wherein forming the pre-form material comprises injection molding the pre-form material.

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