Electrophoretic Display and Method of Manufacturing Thereof
Abstract
A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.
Claims
exact text as granted — not AI-modified1 . A display device having an organic thin film transistor, comprising:
a first substrate; a data line formed on the first substrate and including a source electrode; a drain electrode formed on the first substrate and separated from the source electrode; a partition formed on the data line and having an opening; an organic semiconductor island located in the opening; a gate insulators formed on the organic semiconductor island; a gate line including a gate electrodes disposed on the gate insulator; and a pixel electrode connected to the drain electrode.
2 . The display device of claim 1 , wherein the organic semiconductor island is disposed between the source electrode and the drain electrode.
3 . The display device of claim 2 , wherein the semiconductor island covers at least portions of the source electrode and drain electrode exposed through the opening;
4 . The display device of claim 1 , further comprising:
a common electrode facing the pixel electrode and formed on a second substrate facing the first substrate; and a electric ink layer containing a plurality of negative and positive pigment particles and interposed between the pixel electrode and the common electrode.
5 . The display device of claim 1 , wherein the gate insulator is disposed in the opening.
6 . The display device of claim 1 , further comprising a passivation layer formed on the gate line.
7 . The display device of claim 6 , wherein the pixel electrode is disposed on the passivation layer.
8 . The display device of claim 1 , wherein the pixel electrode includes opaque conductive material.
9 . The display device of claim 1 , wherein the gate electrode is closer than the organic semiconductor island to the common electrode.
10 . The display device of claim 1 , wherein the gate insulator comprises at least a material selected from the group consisting of silicon dioxide, silicon nitride, maleimide-styrene, polyvinylphenol (PVP), and modified cyanoethylpullulan (m-CEP).
11 . The display device of claim 1 , wherein the organic semiconductor comprises at least a material selected from the group consisting of:
tetracene, pentacene, and derivatives thereof with substituent; oligothiophene including four to eight thiophenes connected at the positions 2, 5 of the thiophene rings; perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), and imide derivatives thereof; metallized phthalocyanine and halogenated derivatives thereof; co-oligomer and co-polymer of thienylene and vinylene; regioregular polythiophene; perylene, coroene, and derivatives thereof with substituent; and aromatic and heteroaromatic ring of the above-described materials with at least one hydrocarbon chain having one to thirty carbon atoms.Cited by (0)
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