US2008013199A1PendingUtilityA1
Magnetic Memory Device and Method for Magnetic Reading and Writing
Est. expiryMay 20, 2023(expired)· nominal 20-yr term from priority
G11C 11/14B82Y 10/00G11C 11/15G11C 11/1659G11C 11/161G11C 11/1673G11C 11/1675
36
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Claims
Abstract
Disclosed herein are a magnetic memory device and method for storing and retrieving data. The magnetic memory device includes a read disk and a storage disk. The read disk comprises of an array of read heads wherein the individual read head corresponds to a storage element on the storage disk.
Claims
exact text as granted — not AI-modified1 . A magnetic mass storage memory device comprising:
a) a read disk having an array of read heads; b) a storage disk having an array of magnetic storage elements wherein the read heads associate with a corresponding storage element on the storage disk; and c) a control circuit to select the desired storage element that controls an orientation of a magnetic field of a corresponding read head.
2 . The memory device according to claim 1 , wherein the read head comprising:
a) a pinned layer; and b) a free layer.
3 . The memory device according to claim 2 , wherein the pinned layer has a fixed magnetic orientation.
4 . The memory device according to claim 3 , wherein the free layer has a variable magnetic orientation.
5 . The memory device according to claim 4 , wherein the storage element comprising a second free layer.
6 . The memory device according to claim 5 , wherein the second free layer has a variable magnetic orientation.
7 . The memory device according to claim 6 , wherein the magnetic orientation of the first free layer is regulated by the magnetic orientation of the second free layer.
8 . The memory device according to claim 7 , wherein a resistance of the corresponding read head is indicative of a value stored therein.
9 . The memory device according to claim 8 wherein the read head is an MR.
10 . The memory device according to claim 8 wherein the read head is a GMR.
11 . The memory device according to claim 8 wherein the read head is a CMR.
12 . A magnetic mass storage memory device comprising:
a) a read disk having an array of read heads, each read head comprising a plurality of magnetic layers; b) a storage disk having a plurality of conductive lines with an array of magnetic storage elements disposed between the conductive lines corresponding the read heads; and c) a control circuit to select the desired storage element from an array of storage elements such that a current through the conductive lines will induce a magnetic field in the selected storage element wherein the induced magnetic filed controls a direction of a magnetic field of at least one layer in the plurality of magnetic layers in the corresponding read head.
13 . The memory device according to claim 12 , wherein the plurality of magnetic layers comprising:
a) a pinned layer; and b) a free layer.
14 . The memory device according to claim 13 , wherein a direction of the magnetic field of the pinned layer is fixed.
15 . The memory device according to claim 14 , wherein the direction of the magnetic field of the free layer is variable.
16 . The memory device according to claim 15 , wherein the storage element comprising a second free layer.
17 . The memory device according to claim 16 , wherein a direction of a magnetic field of the second free layer is regulated by a current through the conducting lines.
18 . A method for magnetic writing comprising the steps of:
a) selecting a storage element from an array of storage elements on a storage disk by a control circuit; b) inducing a magnetic field in the storage element by passing current through a plurality of conducting lines around the storage element; and c) controlling the magnetic field orientation of a layer in a corresponding read head by the induced magnetic field.
19 . The method according to claim 18 wherein the storage element and the layer in the corresponding read head are magnetically coupled.
20 . The method according to claim 19 , wherein the read head is a GMR.
21 . A method of magnetic reading on a storage device comprising the steps of:
a) selecting a magnetic storage element, from an array of magnetic storage elements on a storage disk; b) passing current through conducting lines surrounding the magnetic storage element; c) inducing a magnetic field around the magnetic storage element by the current through the conducting lines; d) setting the direction of magnetization of a second free layer in the storage element and d) controlling a direction of the magnetization of a free layer in a corresponding read head from an array of read heads on a read disk by the induced magnetic field; and e) measuring the resistance of the corresponding read head.Cited by (0)
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