US2008013199A1PendingUtilityA1

Magnetic Memory Device and Method for Magnetic Reading and Writing

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Assignee: KUMAR SANTOSHPriority: May 20, 2003Filed: Jul 2, 2007Published: Jan 17, 2008
Est. expiryMay 20, 2023(expired)· nominal 20-yr term from priority
G11C 11/14B82Y 10/00G11C 11/15G11C 11/1659G11C 11/161G11C 11/1673G11C 11/1675
36
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Claims

Abstract

Disclosed herein are a magnetic memory device and method for storing and retrieving data. The magnetic memory device includes a read disk and a storage disk. The read disk comprises of an array of read heads wherein the individual read head corresponds to a storage element on the storage disk.

Claims

exact text as granted — not AI-modified
1 . A magnetic mass storage memory device comprising: 
 a) a read disk having an array of read heads;    b) a storage disk having an array of magnetic storage elements wherein the read heads associate with a corresponding storage element on the storage disk; and    c) a control circuit to select the desired storage element that controls an orientation of a magnetic field of a corresponding read head.    
   
   
       2 . The memory device according to  claim 1 , wherein the read head comprising: 
 a) a pinned layer; and    b) a free layer.    
   
   
       3 . The memory device according to  claim 2 , wherein the pinned layer has a fixed magnetic orientation.  
   
   
       4 . The memory device according to  claim 3 , wherein the free layer has a variable magnetic orientation.  
   
   
       5 . The memory device according to  claim 4 , wherein the storage element comprising a second free layer.  
   
   
       6 . The memory device according to  claim 5 , wherein the second free layer has a variable magnetic orientation.  
   
   
       7 . The memory device according to  claim 6 , wherein the magnetic orientation of the first free layer is regulated by the magnetic orientation of the second free layer.  
   
   
       8 . The memory device according to  claim 7 , wherein a resistance of the corresponding read head is indicative of a value stored therein.  
   
   
       9 . The memory device according to  claim 8  wherein the read head is an MR.  
   
   
       10 . The memory device according to  claim 8  wherein the read head is a GMR.  
   
   
       11 . The memory device according to  claim 8  wherein the read head is a CMR.  
   
   
       12 . A magnetic mass storage memory device comprising: 
 a) a read disk having an array of read heads, each read head comprising a plurality of magnetic layers;    b) a storage disk having a plurality of conductive lines with an array of magnetic storage elements disposed between the conductive lines corresponding the read heads; and    c) a control circuit to select the desired storage element from an array of storage elements such that a current through the conductive lines will induce a magnetic field in the selected storage element wherein the induced magnetic filed controls a direction of a magnetic field of at least one layer in the plurality of magnetic layers in the corresponding read head.    
   
   
       13 . The memory device according to  claim 12 , wherein the plurality of magnetic layers comprising: 
 a) a pinned layer; and    b) a free layer.    
   
   
       14 . The memory device according to  claim 13 , wherein a direction of the magnetic field of the pinned layer is fixed.  
   
   
       15 . The memory device according to  claim 14 , wherein the direction of the magnetic field of the free layer is variable.  
   
   
       16 . The memory device according to  claim 15 , wherein the storage element comprising a second free layer.  
   
   
       17 . The memory device according to  claim 16 , wherein a direction of a magnetic field of the second free layer is regulated by a current through the conducting lines.  
   
   
       18 . A method for magnetic writing comprising the steps of: 
 a) selecting a storage element from an array of storage elements on a storage disk by a control circuit;    b) inducing a magnetic field in the storage element by passing current through a plurality of conducting lines around the storage element; and    c) controlling the magnetic field orientation of a layer in a corresponding read head by the induced magnetic field.    
   
   
       19 . The method according to  claim 18  wherein the storage element and the layer in the corresponding read head are magnetically coupled.  
   
   
       20 . The method according to  claim 19 , wherein the read head is a GMR.  
   
   
       21 . A method of magnetic reading on a storage device comprising the steps of: 
 a) selecting a magnetic storage element, from an array of magnetic storage elements on a storage disk;    b) passing current through conducting lines surrounding the magnetic storage element;    c) inducing a magnetic field around the magnetic storage element by the current through the conducting lines;    d) setting the direction of magnetization of a second free layer in the storage element and    d) controlling a direction of the magnetization of a free layer in a corresponding read head from an array of read heads on a read disk by the induced magnetic field; and    e) measuring the resistance of the corresponding read head.

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