Electronic package with optimized lamination process
Abstract
A laminating method. A structure that includes first and second dielectric layers respectively positioned on opposing surfaces of a thermally conductive layer is pressurized between 1000 and 3000 psi concurrent with being subjected to a thermal process, including the steps of: (a) heating the structure from ambient room temperature to a temperature between 670° F. to 695° F. in a heatup stage of duration 42 to 57 minutes; (b) after step (a), maintaining the structure at an approximately constant temperature between 670° F. and 695° F. in a dwell stage of duration 105 to 125 minutes; (c) after step (b), cooling the structure to 400° F. in a slow cool stage of duration of 120 to 150 minutes, wherein step (c) is performed after step (b); and (d) after step (3), cooling the structure to ambient room temperature in a rapid cool stage of duration less than 180 minutes.
Claims
exact text as granted — not AI-modified1 . A laminating method, comprising:
providing a structure that includes first and second dielectric layers respectively positioned on first and second opposing surfaces of a thermally conductive layer; pressurizing the structure at a pressure between about 1000 psi and about 3000 psi; and concurrent with said pressurizing, subjecting the structure to a thermal process comprising the steps of:
(a) heating the structure from ambient room temperature to a temperature between 670° F. to 695° F. in a heatup stage having a duration of 42 minutes to 57 minutes;
(b) maintaining the structure at an approximately constant temperature between 670° F. and 695° F. in a dwell stage having a duration of 105 minutes to 125 minutes, wherein step (b) is performed after step (a);
(c) cooling the structure to 400° F. in a slow cool stage having a duration of 120 minutes to 150 minutes, wherein step (c) is performed after step (b); and
(d) cooling the structure to ambient room temperature in a rapid cool stage having a duration of less than 180 minutes, wherein step (d) is performed after step (c).
2 . The method of claim 1 , wherein during the heatup stage the temperature in increased from ambient room temperature to the temperature between 670° F. to 695° F. in temperature increments that are sufficiently small that spatial temperature uniformity is achieved in the structure for each said temperature increment.
3 . The method of claim 2 , wherein said temperature increments are each 2° F.Join the waitlist — get patent alerts
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