System and method for manufacturing a thin-film device

Abstract

A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion disposed on the plurality of circuit components, and a patterned passivation dielectric selectively disposed on the unpatterned channel portion to electrically pattern an active region of the unpatterned channel portion.

1 . A thin-film device comprising:
 a plurality of thin-film device components defining an operational region of said thin-film device;   an unpatterned channel portion disposed adjacent to said plurality of thin-film device components; and   a patterned passivation dielectric selectively disposed on said unpatterned channel portion to electrically pattern an active region of said unpatterned channel portion.   
   
   
       2 . The thin-film device of  claim 1 , wherein said patterned passivation dielectric comprises:
 a first dielectric disposed adjacent to said unpatterned channel portion at said operational region, said first dielectric being configured to provide an electrically good interface with said unpatterned channel portion; and   a second dielectric disposed over said first dielectric and over exposed portions of said unpatterned channel, said second dielectric being configured to provide an electrically poor interface with said unpatterned channel portion.   
   
   
       3 . The thin-film device of  claim 2 , wherein said unpatterned channel portion comprises an oxide semiconductor material. 
   
   
       4 . The thin-film device of  claim 3 , wherein said oxide semiconductor material comprises a zinc tin oxide. 
   
   
       5 . The thin-film device of  claim 4 , wherein said zinc tin oxide comprises a composition characterized by a Zn:Sn atomic ratio of about 2:1. 
   
   
       6 . The thin-film device of  claim 3 , wherein said oxide semiconductor comprises one of zinc oxide, tin oxide, indium oxide, gallium oxide, zinc tin oxide, zinc indium oxide, tin indium oxide, indium gallium oxide, zinc gallium oxide, or zinc indium gallium oxide. 
   
   
       7 . The thin-film device of  claim 3 , wherein said first dielectric comprises one of a silicon oxide, a silicon nitride, an aluminum oxide, a hafnium oxide, a tantalum oxide, a germanium oxide, a calcium fluoride, or a strontium fluoride. 
   
   
       8 . The thin-film device of  claim 2 , wherein said second dielectric deactivates portions of said unpatterned channel portion not covered by said first dielectric. 
   
   
       9 . The thin-film device of  claim 3 , wherein said second dielectric comprises one of zinc sulfide, cerium oxide, barium sulfide, or strontium sulfide. 
   
   
       10 . A method of spatially selecting active and inactive regions of a thin-film device channel film comprising disposing a patterned passivation dielectric on an unpatterned channel layer, wherein said patterned passivation dielectric includes at least two passivation dielectrics. 
   
   
       11 . The method of  claim 10 , wherein said at least two passivation dielectrics comprise:
 a first dielectric disposed adjacent to said unpatterned channel layer to define an active region of said thin-film device, said first dielectric being configured to provide a electrically good interface with said unpatterned channel layer; and   a second dielectric disposed over said first dielectric and over exposed portions of said unpatterned channel layer, said second dielectric being configured to provide an electrically poor interface with said unpatterned channel layer.   
   
   
       12 . The method of  claim 11 , wherein said unpatterned channel film comprises an unpatterned oxide semiconductor film. 
   
   
       13 . The method of  claim 11 , wherein said thin-film device further comprises forming at least one embedded electrode and a plurality of vias configured to enable device operation. 
   
   
       14 . The method of  claim 11 , wherein said spatially selecting of active and inactive regions further comprises patterning said first dielectric. 
   
   
       15 . The method of  claim 14 , wherein said first dielectric layer defines, covers, and protects the active device regions of said thin-film device. 
   
   
       16 . The method of  claim 11 , wherein said spatially selecting of active and inactive regions further comprises disposing an unpatterned second dielectric layer on said first dielectric. 
   
   
       17 . A method of spatially defining active and inactive regions of an unpatterned thin-film device channel film comprising:
 disposing at least two passivation dielectrics adjacent to said unpatterned thin-film device channel film; and   selectively damaging areas of said unpatterned channel film.   
   
   
       18 . The method of  claim 17 , further comprising forming one or more embedded electrodes and vias configured to enable device operation. 
   
   
       19 . The method of  claim 17 , wherein said spatially defining active and inactive regions further comprises patterning one of said at least two passivation dielectrics. 
   
   
       20 . The method of  claim 19 , wherein said patterned passivation dielectric layer defines, covers, and protects at least one active device region of said thin-film device. 
   
   
       21 . The method of  claim 17 , wherein said patterned damaging of said unpatterned channel film further comprises chemically modifying a surface of said unpatterned channel film after a deposition of said patterned passivation dielectric layer. 
   
   
       22 . The method of  claim 21 , wherein chemically modifying a surface of said unpatterned channel film deactivates a portion of said unpatterned channel film. 
   
   
       23 . The method of  claim 19 , wherein said spatially defining active and inactive regions further comprises disposing an unpatterned passivation dielectric layer on top of said patterned passivation dielectric layer.