Thermal Interconnect System and Method of Production Thereof

Abstract

A thermal transfer material is described herein that includes: a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material, and at least one solder material, wherein the solder material is directly deposited onto the bottom surface of the heat spreader component. Methods of forming layered thermal interface materials and thermal transfer materials include: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one solder material, wherein the solder material is directly deposited onto the bottom surface of the heat spreader component; and c) depositing the at least one solder material onto the bottom surface of the heat spreader component.

1 - 36 . (canceled)  
   
   
       37 . An electronic component, comprising: 
 a thermal transfer material, wherein the material comprises a heat spreader component, and    at least one solder material, wherein the solder material is directly deposited onto the heat spreader component.    
   
   
       38 . The electronic component of  claim 37 , wherein the heat spreader component wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material.  
   
   
       39 . The electronic component of  claim 38 , wherein the solder material is directly deposited on the bottom surface of the heat spreader component.  
   
   
       40 . The electronic component of  claim 37 , wherein the heat spreader component comprises a thickness of about 0.25 mm to about 6 mm.  
   
   
       41 . The electronic component of  claim 37 , wherein the solder material is further coupled to a substrate.  
   
   
       42 . The electronic component of  claim 41 , wherein the substrate comprises silicon.  
   
   
       43 . The electronic component of  claim 41 , wherein the substrate is a metalized silicon die.  
   
   
       44 . The electronic component of  claim 37 , wherein the heat spreader component comprises a metal, metal-based material or combination thereof.  
   
   
       45 . The electronic component of  claim 44 , wherein the heat spreader component comprises nickel, aluminum, copper or a combination thereof.  
   
   
       46 . The electronic component of  claim 44 , wherein the metal-based material comprises silicon, carbon or a combination thereof.  
   
   
       47 . The electronic component of  claim 40 , wherein the thickness is from about 1 mm to about 5 mm.  
   
   
       48 . The electronic component of  claim 37 , wherein the at least one solder material comprises a metal, a metal-based material or a combination thereof.  
   
   
       49 . The electronic component of  claim 48 , wherein the metal comprises a transition metal.  
   
   
       50 . The electronic component of  claim 49 , wherein the metal comprises indium, tin, lead, silver, copper, antimony, tellurium or bismuth.  
   
   
       51 . The electronic component of  claim 48 , wherein the metal-based material comprises an alloy.  
   
   
       52 . The electronic component of  claim 51  wherein the alloy comprises indium, tin, lead, silver, copper, antimony, tellurium, bismuth or a combination thereof.  
   
   
       53 . The electronic component of one of claims  49  or  50 , further comprising a layer of a noble metal or a silicide former.  
   
   
       54 . The electronic component of  claim 53 , wherein the silicide former comprises silver, platinum or palladium.  
   
   
       55 . The electronic component of  claim 54 , wherein the silicide former is a flash layer.  
   
   
       56 . The electronic component of  claim 37 , wherein the solder material is directly deposited using electrodeposition.