US2008035489A1PendingUtilityA1
Plating process
Est. expiryJun 5, 2026(expired)· nominal 20-yr term from priority
H10F 77/211C23C 18/1667C23C 18/42C25D 5/011C25D 3/46Y02E10/50C25D 7/126C23C 18/165C23C 18/1608C23C 18/1605C23C 18/1614C23C 18/38C23C 18/1642
40
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Claims
Abstract
Methods of plating electrical contacts on a photosensitive device are provided. Also provided are methods of plating electrical contacts on solar cells.
Claims
exact text as granted — not AI-modified1 . A method of plating an electrical contact on a light-sensitive device displaying a photovoltaic effect, comprising providing a semiconductive wafer having at least two major surfaces, the wafer having a photovoltaic junction formed therein so that when one of the major surfaces of the wafer is exposed to light, negative charges collect at a first of the major surfaces and positive charges collect at a second of the major surfaces, contacting the wafer with a cyanide-free metal plating bath, applying a potential to the plating bath and exposing the wafer to light to deposit a layer of metal onto the first major surface, wherein the plating bath is an aqueous solution and comprises metal ions, at least one water-soluble nitro-containing compound, at least one surfactant, at least one amido-compound, and at least one component chosen from a water-soluble amino acid, a water-soluble sulfonic acid, and mixtures thereof.
2 . The method of claim 1 further comprising the step of contacting the wafer with a solution comprising a sulfonic acid before contacting the wafer with the bath of cyanide-free silver electrolyte.
3 . The method of claim 2 wherein the sulfonic acid is methane sulfonic acid.
4 . The method of claim 1 wherein the light is continuous or pulsed.
5 . The method of claim 1 wherein the wafer has an antireflective coating overlying the first major surface.
6 . The method of claim 5 wherein the antireflective coating comprises one or more of a silicon oxide layer, a silicon nitride layer, and a combination of a silicon oxide layer and a silicon nitride layer.
7 . The method of claim 1 wherein the bath further comprises a buffering agent and where the bath has a pH of 7 to 14.
8 . The method of claim 1 wherein the metal is chosen from silver, gold and copper.
9 . The method of claim 1 wherein the first major surface comprises a plurality of contacts.
10 . The method of claim 1 further comprising providing a coating of the metal on the second major surface prior to contacting wafer with the cyanide-free metal plating bath.
11 . The method of claim 1 , wherein the plating bath further comprises one or more vitamins.Cited by (0)
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