Photonic Device

Abstract

Embodiments of methods, apparatuses, devices, or systems for forming a photonic device are described.

1 . A photonic device, comprising: 
 a first layer of material, wherein a plurality of holes are formed at least partially through at least a portion of the first layer of material;    a second layer of material formed in at least a portion of one or more of the plurality of holes; and    at least a third layer of material formed on at least a portion of the second layer of material, such as to substantially fill the one or more of the plurality of holes, wherein the photonic device is capable of exhibiting a band gap in at least one dimension.    
     
     
         2 . The photonic device of  claim 1 , wherein the photonic device comprises a photonic device having a 2D photonic band gap.  
     
     
         3 . The photonic device of  claim 2 , wherein the photonic device comprises a photonic device having a 3D photonic band gap.  
     
     
         4 . The photonic device of  claim 1 , wherein said first layer of material is formed on a substrate.  
     
     
         5 . The photonic device of  claim 4 , wherein the substrate is substantially comprised of silicon.  
     
     
         6 . The photonic device of  claim 1 , wherein at least a portion of the holes comprise an arrangement of holes having a particular configuration formed substantially through the first layer of material.  
     
     
         7 . The photonic device of  claim 6 , wherein said particular configuration comprises one or more of: cylindrical, rectangular, prismatic, elliptical and triangular.  
     
     
         8 . The photonic device of  claim 7 , wherein the arrangement comprises an evenly spaced arrangement of holes.  
     
     
         9 . The photonic device of  claim 7 , wherein the arrangement comprises an unevenly spaced arrangement of holes.  
     
     
         10 . The photonic device of  claim 1 , wherein the first layer of material comprises one or more of the following: Tungsten, Tantalum, Iridium, Molybdenum, Niobium, Platinum, Rhenium, Rhodium, Ruthenium, Silver, Zirconium, Aluminum, semiconductive material, dielectric material, plastic, polymer, ceramic or combinations thereof.  
     
     
         11 . The photonic device of  claim 1 , wherein at least a portion of the second and third layers of material comprise one or more of: silicon oxide, silicon nitride, silicon oxinitride, tungsten silicon oxide, tungsten silicon nitride, silicon carbide, amorphous silicon, aluminum nitride, diamond, magnesium oxide, zirconia, hafnia, alumina, and combinations thereof.  
     
     
         12 . The photonic device of  claim 1 , wherein said photonic device is at least partially periodic.  
     
     
         13 . The photonic device of  claim 1 , wherein said photonic device is at least partially nonperiodic.  
     
     
         14 . The photonic device of  claim 1 , wherein said photonic device is at least partially periodic and at least partially nonperiodic.  
     
     
         15 . The photonic device of  claim 1 , and further comprising: 
 a fourth layer of material formed on at least a portion of the third layer of material such as to substantially fill the one or more of the plurality of holes.    
     
     
         16 . The photonic device of  claim 15 , and further comprising: 
 a fifth layer of material formed on at least a portion of the fourth layer of material; and    a sixth layer of material formed on at least a portion of the fourth layer of material, such as to substantially fill the one or more of the plurality of holes.    
     
     
         17 . The photonic device of  claim 4 , and further comprising: 
 a plurality of metal layers formed over the top surface of the substrate; and    a plurality of evenly spaced cylindrical holes formed from the top surface of the substrate through the plurality of metal layers; and    three layers of material layered in to a substantial portion of the holes, such as to substantially fill the holes.    
     
     
         18 . A photonic device, comprising: 
 a first layer of material, wherein the first layer of material has one or more channels formed therein;    two or more materials layered in the one or more channels of the first layer;    a second layer of material formed over the first layer of material, wherein the second layer of material is configured to have one or more channels formed therein, and wherein the channels are oriented relative to the one or more channels formed in the first layer of material;    two or more materials layered in the one or more channels of the second layer;    a third layer of material formed over the second layer of material, wherein the third layer of material is configured to have one or more channels formed therein, and wherein the channels are oriented relative to the one or more channels formed in the second layer of material;    two or more materials layered in the one or more channels formed in the third layer;    a fourth layer of material formed over the third layer of material, wherein the fourth layer of material is configured to have one or more channels formed therein, and wherein the channels are oriented relative to the one or more channels formed in the third layer of material; and    two or more materials layered in the one or more channels formed in the fourth layer; and    wherein the photonic device is capable of exhibiting a band gap in at least one dimension.    
     
     
         19 . The photonic device of  claim 18 , wherein the photonic device has a 2D photonic band gap.  
     
     
         20 . The photonic device of  claim 19 , wherein the photonic device has a 3D photonic band gap.  
     
     
         21 . The photonic device of  claim 18 , wherein said one or more channels formed in the second layer of material are oriented at approximately perpendicular to the one or more channels formed in the first layer of material, wherein said one or more channels formed in the third layer of material are oriented at approximately perpendicular to the one or more channels formed in the second layer of material, and wherein said one or more channels formed in the fourth layer of material are oriented at approximately perpendicular to the one or more channels formed in the third layer of material.  
     
     
         22 . The photonic device of  claim 18 , wherein the first layer of material is formed on a substrate, wherein the substrate is substantially comprised of silicon.  
     
     
         23 . The photonic device of  claim 18 , wherein at least a portion of the first, second, third and fourth layers of material comprise one or more of the following: Tungsten, Tantalum, Iridium, Molybdenum, Niobium, Platinum, Rhenium, Rhodium, Ruthenium, Silver, Zirconium, Aluminum, semiconductive material, dielectric material, plastic, polymer, ceramic or combinations thereof.  
     
     
         24 . The photonic device of  claim 18 , wherein at least a portion of the two or more materials formed in one or more of the channels comprise one or more of the following: silicon oxide, silicon nitride, silicon oxinitride, tungsten, silicon oxide, tungsten silicon nitride, silicon carbide, amorphous silicon, aluminum nitride, diamond, magnesium oxide, zirconia, hafnia, or alumina, or combinations thereof.  
     
     
         25 . The photonic device of  claim 18 , wherein said photonic device is at least partially periodic.  
     
     
         26 . The photonic device of  claim 18 , wherein said photonic device is at least partially nonperiodic.  
     
     
         27 . The photonic device of  claim 18 , wherein said photonic device is at least partially periodic and at least partially nonperiodic.  
     
     
         28 - 70 . (canceled)