Thin-film read element

Abstract

The present invention relates to a thin-film read element for use in reading magnetic signals from a device. The read element includes a first thin-film read sensor and a second thin-film read sensor that are each configured to convert the magnetic signals of the device to electrical signals.

1 . A thin-film read element for use in reading magnetic signals from a device, the read element comprising: 
 a first thin-film read sensor and a second thin-film read sensor, each read sensor converting the magnetic signals to electrical signals;    a shared shield between the first and second read sensor, the shared shield defining at least a portion of a first window for the first read sensor and at least a portion of a second window of the second read sensor, the read sensors receiving the magnetic signals through the windows.    
   
   
       2 . The read element of  claim 1  wherein the second read sensor is offset from the first read sensor.  
   
   
       3 . The read element of  claim 2  wherein the second read sensor is offset in a X direction relative to the first read sensor.  
   
   
       4 . The read element of  claim 2  wherein the second read sensor is offset in a Y direction relative to the first read sensor.  
   
   
       5 . The read element of  claim 2  wherein the second read sensor is offset in a X and Y direction relative to the first read sensor.  
   
   
       6 . The read element of  claim 1  wherein the read sensors are formed on a single chip structure.  
   
   
       7 . The read element of  claim 6  wherein the single chip structure includes a first shield proximate the first read sensor and a second shield proximate the second read sensor, the first and second shield cooperating with the shared-shield to further define at least a portion of the first and second windows.  
   
   
       8 . The read element of  claim 7  wherein the single chip structure includes an insulator deposited between each of the shields and the read sensors for electrical isolation.  
   
   
       9 . The read element of  claim 8  wherein the single chip structure includes a first ceramic layer and a second ceramic layer at opposite ends of the chip structure to define a length of the structure.  
   
   
       10 . A thin-film read element for use in reading magnetic signals from a device, the read element comprising: 
 a first thin-film read sensor and a second thin-film read sensor, each read sensor converting the magnetic signal to electrical signals; and    wherein the read sensors are formed on a single chip structure.    
   
   
       11 . The read element of  claim 10  wherein the single chip structure includes a first shield proximate the first read sensor and a second shield proximate the second read sensor and a shared-shield between the first read sensor and the second read sensor, the first and second shield cooperating with the shared-shield to define at least a portion of a first window for the first read sensor and at least a portion of a second window of the second read sensor, the read sensors receiving the magnetic signals through the windows.  
   
   
       12 . The read element of  claim 11  wherein the single chip structure includes an insulator deposited between each of the shields and the read sensors for electrical isolation.  
   
   
       13 . The read element of  claim 12  wherein the single chip structure includes a first ceramic layer and a second ceramic layer at opposite ends of the chip structure to define a length of the structure.  
   
   
       14 . A method for manufacturing a thin-film read element for use in reading magnetic signals from a device, the read element comprising: 
 forming a first layer of ceramic material;    forming a first portion of an insulating layer on the first layer;    positioning a first shield on the first portion of the insulating layer;    forming a second portion of the insulating layer on the first shield;    positioning a first thin-film read sensor on the second portion of the insulating layer, the first read sensor converting the magnetic signals to electrical signals;    forming a third portion of the insulating layer on the first thin-film read sensor;    positioning a shared-shield on the third portion of the insulating layer;    forming a fourth portion of the insulating layer on the shared-shield;    positioning a second read sensor on the fourth portion of the insulating layer, the second read sensor converting the magnetic signals to electrical signals;    forming a fifth portion of the insulating layer on the second read sensor;    positioning a second shield on the fifth portion of the insulating layer;    forming a sixth portion of the insulating layer on the second shield; and    forming a second layer of ceramic material on the sixth portion of the insulating layer.