US2008044556A1PendingUtilityA1

In-line deposition processes for circuit fabrication

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Assignee: 3M INNOVATIVE PROPERTIES COPriority: Feb 14, 2002Filed: Oct 23, 2007Published: Feb 21, 2008
Est. expiryFeb 14, 2022(expired)· nominal 20-yr term from priority
H05K 1/0393G03F 7/12C23C 14/12C23C 14/562H05K 2203/0271C23C 14/042H05K 3/143H05K 2203/1545C23C 14/56C23C 14/04H10K 10/466H10K 71/13
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Claims

Abstract

In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

Claims

exact text as granted — not AI-modified
1 . A method comprising: 
 positioning first and second webs of film in proximity to each other, wherein the second web of film defines a deposition mask pattern;    depositing material on the first web of film through the deposition mask pattern defined by the second web of film to create at least a portion of an integrated circuit; and    stretching at least one web of film to align the deposition mask pattern relative to the first web of film prior to disposition.    
     
     
         2 . The method of  claim 1 , comprising: 
 stretching the second web of film in a down-web direction to align the deposition mask pattern relative to the first web of film prior to deposition.    
     
     
         3 . The method of  claim 1 , comprising: 
 stretching the second web of film in a cross-web direction to align the deposition mask pattern relative to the first web of film prior to deposition.    
     
     
         4 . The method of  claim 1 , comprising: 
 stretching the first web of film in a down-web direction to align the deposition mask pattern relative to the first web of film prior to deposition.    
     
     
         5 . The method of  claim 1 , comprising: 
 stretching the first web of film in a cross-web direction to align the deposition mask pattern relative to the first web of film prior to deposition.    
     
     
         6 . A method of creating integrated circuits comprising: 
 passing a first elongated web of flexible film through a number of vacuum deposition chambers; and    sequentially depositing patterned layers of material on the web of flexible film in each vacuum deposition chamber.    
     
     
         7 . The method of  claim 6 , wherein deposition of a layer corresponding to a second layer in a second vacuum deposition chamber occurs at substantially the same time as deposition of a layer corresponding to a first layer in a first vacuum deposition chamber.  
     
     
         8 . The method of  claim 6 , further comprising separating the first elongated web of flexible film into a number of integrated circuits.  
     
     
         9 . The method of  claim 8 , wherein each circuit comprises a radio frequency identification (RFID) circuit.

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