US2008048178A1PendingUtilityA1

Tin phosphate barrier film, method, and apparatus

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Assignee: AITKEN BRUCE GARDINERPriority: Aug 24, 2006Filed: Aug 24, 2006Published: Feb 28, 2008
Est. expiryAug 24, 2026(~0.1 yrs left)· nominal 20-yr term from priority
Inventors:Bruce Gardiner AitkenChong Pyung AnBenjamin Zain HansonMark Alejandro Quesada
Y02E10/50H10K 50/844C23C 14/06H10F 19/80H05B 33/04
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Claims

Abstract

A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Claims

exact text as granted — not AI-modified
1 . A method of inhibiting oxygen and moisture penetration of a device, comprising the steps of:
 a. depositing a tin phosphate low liquidus temperature inorganic material on at least a portion of the device to create a deposited low liquidus temperature inorganic material; and   b. heat treating the deposited low liquidus temperature inorganic material in a substantially oxygen and moisture free environment to form a hermetic seal;   wherein the step of depositing the low liquidus temperature inorganic material comprises the use of a resistive heating element comprising tungsten.   
     
     
         2 . The method of  claim 1 , wherein the tin phosphate material comprises tin meta-phosphate, tin ortho-hydrogen phosphate, tin ortho-dihydrogen phosphate, tin pyrophosphate, or a mixture thereof. 
     
     
         3 . The method of  claim 1 , wherein the tin phosphate low liquidus temperature inorganic material further comprises a tin oxide. 
     
     
         4 . The method of  claim 1 , wherein the tin phosphate low liquidus temperature inorganic material comprises from about 60 mole percent to about 80 mole percent SnO. 
     
     
         5 . The method of  claim 1 , wherein the tin phosphate low liquidus temperature inorganic material is substantially free of fluorine. 
     
     
         6 . The method of  claim 1 , wherein the tin phosphate low liquidus temperature inorganic material further comprises a niobium compound. 
     
     
         7 . The method of  claim 1 , wherein the device comprises at least one of:
 an organic-electronic device;   a thin-film sensor;   an optoelectronic device;   a photovoltaic device;   a food container; or   a medicine container.   
     
     
         8 . The device produced by the method of  claim 1 . 
     
     
         9 . An organic electronic device comprising:
 a substrate plate;   at least one organic electronic or optoelectronic layer; and   a tin phosphate low liquidus temperature barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate low liquidus temperature barrier layer and the substrate plate.   
     
     
         10 . The organic electronic device of  claim 9 , wherein the tin phosphate low liquidus temperature barrier layer comprises tin meta-phosphate, tin ortho-hydrogen phosphate, tin ortho-dihydrogen phosphate, or a mixture thereof. 
     
     
         11 . The organic electronic device of  claim 9 , wherein the tin phosphate low liquidus temperature barrier layer comprises tin pyrophosphate. 
     
     
         12 . The organic electronic device of  claim 9 , wherein the tin phosphate low liquidus temperature barrier layer further comprises a tungsten compound. 
     
     
         13 . The organic electronic device of  claim 12 , wherein the tin phosphate low liquidus temperature barrier layer comprises from greater than 0 to about 10 weight percent tungsten. 
     
     
         14 . The organic electronic device of  claim 9 , wherein the tin phosphate low liquidus temperature barrier layer further comprises a niobium compound. 
     
     
         15 . An apparatus having at least a portion thereof sealed with a tin phosphate low liquidus temperature barrier layer. 
     
     
         16 . The apparatus of  claim 15 , wherein the tin phosphate low liquidus temperature barrier layer comprises tin meta-phosphate, tin ortho-hydrogen phosphate, tin ortho-dihydrogen phosphate, or a mixture thereof. 
     
     
         17 . The apparatus of  claim 15 , wherein the tin phosphate low liquidus temperature barrier layer comprises tin pyrophosphate. 
     
     
         18 . The apparatus of  claim 15 , wherein the tin phosphate low liquidus temperature barrier layer further comprises a tungsten compound. 
     
     
         19 . The apparatus of  claim 18 , wherein the tin phosphate low liquidus temperature barrier layer further comprises a niobium compound. 
     
     
         20 . The apparatus of  claim 15 , wherein the tin phosphate low liquidus temperature barrier layer further comprises a niobium compound.

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