Semiconductor Device and Fabricating Method Thereof

Abstract

A semiconductor device for a system in a package (SiP) type device can include a semiconductor substrate; a pre-metal-dielectric (PMD) layer on the semiconductor substrate; at least one metal layer on the PMD layer; a first through-electrode extending through the semiconductor substrate and the PMD layer; and a second through-electrode connected to the first through-electrode through the metal layer.

1 . A semiconductor device comprising:
 a semiconductor substrate;   a pre-metal-dielectric (PMD) layer on the semiconductor substrate;   at least one metal layer on the PMD layer;   a first through-electrode extending through the semiconductor substrate and the PMD layer; and   a second through-electrode connected to the first through-electrode through the metal layer.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein the first and second through-electrodes include at least one selected from the group consisting of W, Cu, Al, Ag and Au. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the semiconductor substrate comprises a photodiode area and a transistor area, the semiconductor device further comprising:
 a color filter formed on the metal layer to filter light incident onto the photodiode area.   
   
   
       4 . The semiconductor device according to  claim 1 , wherein the semiconductor substrate comprises a photodiode area, a transistor area, and an isolation layer, and
 wherein the first through-electrode extends below the isolation layer.   
   
   
       5 . A method of fabricating a semiconductor device, the method comprising the steps of:
 preparing a semiconductor substrate having a photodiode area and a transistor area;   forming a pre-metal-dielectric (PMD) layer on the semiconductor substrate;   forming a first through-electrode extending into the semiconductor substrate from a top surface of the PMD layer;   forming at least one metal layer on the PMD layer;   forming a second through-electrode connected to the first through-electrode through the metal layer; and   removing a bottom surface of the semiconductor substrate to expose the first through-electrode.   
   
   
       6 . The method according to  claim 5 , further comprising, after forming the second through-electrode, forming a color filter on the metal layer to filter light incident into the photodiode area. 
   
   
       7 . The method according to  claim 5 , wherein removing a bottom surface of the semiconductor substrate comprises polishing the bottom surface of the semiconductor substrate to expose the first through-electrode. 
   
   
       8 . The method according to  claim 5 , wherein the first and second through-electrodes include at least one selected from the group consisting of W, Cu, Al, Ag and Au. 
   
   
       9 . The method according to  claim 5 , wherein preparing the semiconductor substrate having the photodiode area and the transistor area comprises forming an isolation layer, and wherein the first through-electrode extends below the isolation layer. 
   
   
       10 . A semiconductor device comprising:
 an image sensor comprising:
 a semiconductor substrate having a photodiode area and a transistor area, 
 a pre-metal-dielectric (PMD) layer on the semiconductor substrate, 
 at least one metal layer on the PMD layer, 
 a first through-electrode extending through the semiconductor substrate and the PMD layer, and 
 a second through-electrode connected to the first through-electrode through the metal layer; 
   a second device provided below the image sensor; and   a connection layer interposed between the image sensor and the second device to electrically connect the first through-electrode of the image sensor to a circuit electrode of the second device.   
   
   
       11 . The semiconductor device according to  claim 10 , wherein the first and second through-electrodes of the image sensor include at least one selected from the group consisting of W, Cu, Al, Ag and Au. 
   
   
       12 . The semiconductor device according to  claim 10 , wherein the image sensor further comprises a color filter formed on the metal layer to filter light incident onto the photodiode area. 
   
   
       13 . The semiconductor device according to  claim 10 , wherein the image sensor further comprises an isolation layer on the semiconductor substrate having the photodiode area and the transistor area, wherein the first through-electrode extends below the isolation layer.