Organic light emitting diode

Abstract

An organic light emitting diode is provided. The organic light emitting diode includes a substrate, an anode electrode structure formed on the substrate and including at least a metal layer and a metal oxide layer, an organic layer formed on the anode electrode structure and a cathode electrode structure formed on the organic layer. The metal oxide layer includes an oxide of the metal layer and has a thickness ranged between 1 to 50 nm

1 . An organic light emitting diode, comprising: 
 a substrate;    an anode electrode structure formed on the substrate and comprising at least a metal layer and a metal oxide layer, wherein the metal oxide layer comprises an oxide of the metal layer and has a thickness ranged between 1 to 50 nm;    an organic layer formed on the anode electrode structure; and    a cathode electrode structure formed on the organic layer.    
   
   
       2 . The organic light emitting diode according to  claim 1  wherein the cathode electrode structure comprises a thin metal layer.  
   
   
       3 . The organic light emitting diode according to  claim 2  wherein the thin metal layer is one selected from a group consisting of layers of Al, Ag, Cr, and Mo, stack layers thereof and a layer of a combination thereof.  
   
   
       4 . The organic light emitting diode according to  claim 1 , wherein the metal layer is selected from one of a group consisting of transition metals and Group 13 metals.  
   
   
       5 . The organic light emitting diode according to  claim 1 , wherein the metal oxide layer is disposed between the metal layer and the organic layer.  
   
   
       6 . The organic light emitting diode according to  claim 1 , wherein the metal oxide layer comprises a silver oxide layer.  
   
   
       7 . The organic light emitting diode according to  claim 1 , wherein the thickness of the metal oxide layer is ranged between 1.5 and 25 nm.  
   
   
       8 . The organic light emitting diode according to  claim 2  wherein the thin metal layer has a thickness less than 40 nm.  
   
   
       9 . The organic light emitting diode according to  claim 1  wherein the cathode electrode structure comprises an electron injection layer.  
   
   
       10 . The organic light emitting diode according to  claim 9  wherein the electron injection layer comprises an Al layer.  
   
   
       11 . The organic light emitting diode according to  claim 10  wherein the Al layer has a thickness less than 4 nm.  
   
   
       12 . The organic light emitting diode according to  claim 10  wherein the electron injection layer further comprises an alkali-salt layer.  
   
   
       13 . The organic light emitting diode according to  claim 12  wherein the alkali-salt layer has a thickness between 0.1 and 4 nm.  
   
   
       14 . The organic light emitting diode according to  claim 12  wherein the alkali-salt layer is one selected from a group consisting of layers of LiF, LiO2, and NaCl, stack layers thereof and a layer of a combination thereof.  
   
   
       15 . The organic light emitting diode according to  claim 1  wherein the metal oxide layer is one selected from a group consisting of layers of indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide, tin oxide, zinc oxide, aluminum zinc oxide (AZO), and tellurium oxide, stack layers thereof and a layer of a combination thereof.  
   
   
       16 . The organic light emitting diode according to  claim 1  wherein the anode electrode structure further comprises a conductive polymer layer formed on the metal oxide layer.  
   
   
       17 . The organic light emitting diode according to  claim 16  wherein the conductive polymer layer is one selected from a group consisting of layers of polyethylene dioxythiophene/polystyrene sulphonate (PEDOT/PSS), 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA), and polyaniline (PANI), stack layers thereof and a layer of a combination thereof.  
   
   
       18 . An organic light emitting diode, comprising: 
 a substrate;    an anode electrode structure formed on the substrate and comprising a metal layer;    a metal oxide layer formed on the metal layer, wherein the metal oxide layer comprises a metal component selected from one of a group consisting of transition metals and Group 13 metals and an oxide of the metal layer has a thickness ranged between 1 to 50 nm;    an organic layer formed on the metal oxide layer; and    a cathode electrode structure formed on said organic layer.    
   
   
       19 . The organic light emitting diode according to  claim 18 , wherein the thickness of the oxide of the metal layer is ranged between 1.5 and 25 nm.  
   
   
       20 . An organic light emitting diode, comprising: 
 a substrate;    an anode electrode structure formed on the substrate;    an organic layer formed on the anode electrode structure;    a cathode electrode structure having at least one transparent dielectric layer with a refraction index greater than 2.0 within a wavelength of visible light,    wherein the anode electrode structure comprises a metal layer and a silver oxide layer disposed on the metal layer, and the silver oxide layer has a thickness ranged between 1 to 50 nm.