Metal-insulator-metal capacitor and method of fabricating same

Abstract

A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insulating layer, a dielectric layer formed in the first opening, a conductive material deposited in the first and second openings, and a first metal plate formed over the first opening and a second metal plate formed over the second opening. A method for fabricating the MIM capacitor, includes forming the first metal layer, forming the insulating layer on the first metal layer, forming at least the first opening and at least the second opening in the first insulating layer, depositing a mask over the second opening, forming the dielectric layer in the first opening, removing the mask, depositing the conductive material in the first and second openings, and depositing a second metal layer over the first and second openings. MIM capacitors and methods of fabricating same are described, wherein the MIM capacitors are formed simultaneously with the BEOL interconnect and large density MIM capacitors are fabricated at low cost.

1 . A metal-insulator-metal capacitor, comprising: 
 a first metal layer;    a first insulating layer formed on the first metal layer;    a first opening formed in the first insulating layer;    a first dielectric layer formed in the first opening;    a first conductive material deposited in the first opening;    a second metal layer formed over the first opening;    a second insulating layer formed on the second metal layer;    a second opening formed in the second insulating layer;    a second dielectric layer formed in the second opening;    a second conductive material deposited in the second opening; and    a third metal layer formed over the second opening.    
   
   
       2 . The metal-insulator-metal capacitor of  claim 1 , further comprising a polish stop layer formed on the first insulating layer.  
   
   
       3 . The metal-insulator-metal capacitor of  claim 2 , wherein the second metal layer is formed on the first insulating layer including the polish stop layer.  
   
   
       4 . The metal-insulator-metal capacitor of  claim 1 , wherein the first and second conductive materials are each formed from one of aluminum, copper and tungsten.  
   
   
       5 . The metal-insulator-metal capacitor of  claim 1 , wherein the first, second and third metal layers are each formed from one of aluminum, copper and tungsten.  
   
   
       6 . The metal-insulator-metal capacitor of  claim 1 , wherein the first and second dielectric layers are each formed from one of chemical vapor deposition oxide and chemical vapor deposition nitride.  
   
   
       7 . The metal-insulator-capacitor of  claim 1 , further comprising another opening formed in the first insulating layer, wherein the first conductive material is deposited in the other opening.  
   
   
       8 . The metal-insulator-capacitor of  claim 7 , wherein the second metal layer is formed over the other opening.  
   
   
       9 . The metal-insulator-capacitor of  claim 1 , further comprising another opening formed in the second insulating layer, wherein the second conductive material is deposited in the other opening.  
   
   
       10 . The metal-insulator-capacitor of  claim 9 , wherein the second metal layer is formed over the other opening.