US2008054271A1PendingUtilityA1

Nitride semiconductor light emitting diode

53
Assignee: SAMSUNG ELECTRO MECHPriority: Aug 29, 2006Filed: Mar 28, 2007Published: Mar 6, 2008
Est. expiryAug 29, 2026(~0.1 yrs left)· nominal 20-yr term from priority
Inventors:Sang Yeob SongJi Hye ShimBum Joon Kim
H10H 20/81H10H 20/825
53
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Claims

Abstract

A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Claims

exact text as granted — not AI-modified
1 . A nitride semiconductor light emitting diode (LED) comprising:
 an n-type nitride semiconductor layer;   an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;   an active layer formed on the electron emitting layer; and   a p-type nitride semiconductor layer formed on the active layer.   
   
   
       2 . The nitride semiconductor LED according to  claim 1 ,
 wherein the electron emitting layer is composed of at least one Ga x Sc (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and 0≦y<1).   
   
   
       3 . The nitride semiconductor LED according to  claim 2 ,
 wherein the thicknesses of the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are equal to or different from each other.   
   
   
       4 . The nitride semiconductor LED according to  claim 2 ,
 wherein when the electron emitting layer is composed of more than two Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1), the thicknesses of the respective Ga x Sc (1-x) N layers composing the electron emitting layer are equal to or different from each other.   
   
   
       5 . The nitride semiconductor LED according to  claim 2 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are not doped with impurities.   
   
   
       6 . The nitride semiconductor LED according to  claim 2 ,
 wherein all or some of the Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1) composing the electron emitting layer are doped with n-type impurities.   
   
   
       7 . The nitride semiconductor LED according to  claim 6 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are doped with the n-type impurities in the same concentration or different concentration.   
   
   
       8 . The nitride semiconductor LED according to  claim 1 ,
 wherein the electron emitting layer is composed of at least one Ga x Y (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and 0≦y<1).   
   
   
       9 . The nitride semiconductor LED according to  claim 1  further comprising
 another electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.   
   
   
       10 . A nitride semiconductor light emitting diode (LED) comprising:
 an n-type nitride semiconductor layer;   an active layer formed on the n-type nitride semiconductor layer;   an electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; and   a p-type nitride semiconductor layer formed on the electron emitting layer.   
   
   
       11 . A nitride semiconductor light emitting diode (LED) comprising:
 a substrate;   an n-type nitride semiconductor layer formed on the substrate;   an electron emitting layer formed on a portion of the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;   an active layer formed on the electron emitting layer;   a p-type nitride semiconductor layer formed on the active layer;   a p-electrode formed on the p-type nitride semiconductor layer; and   an n-electrode formed on the n-type nitride semiconductor layer where the electron emitting layer is not formed.   
   
   
       12 . The nitride semiconductor LED according to  claim 11 ,
 wherein the electron emitting layer is composed of at least one Ga x Sc (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and 0≦y<1).   
   
   
       13 . The nitride semiconductor LED according to  claim 12 ,
 wherein the thicknesses of the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are equal to or different from each other.   
   
   
       14 . The nitride semiconductor LED according to  claim 12 ,
 wherein when the electron emitting layer is composed of more than two Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1), the thicknesses of the respective Ga x Sc (1-x) N layers composing the electron emitting layer are equal to or different from each other.   
   
   
       15 . The nitride semiconductor LED according to  claim 12 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are not doped with impurities.   
   
   
       16 . The nitride semiconductor LED according to  claim 12 ,
 wherein all or some of the Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1) composing the electron emitting layer are doped with n-type impurities.   
   
   
       17 . The nitride semiconductor LED according to  claim 16 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are doped with the n-type impurities in the same concentration or different concentration.   
   
   
       18 . The nitride semiconductor LED according to  claim 11 ,
 wherein the electron emitting layer is composed of at least one Ga x Y (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and 0≦y<1).   
   
   
       19 . The nitride semiconductor LED according to  claim 11  further comprising
 another electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.   
   
   
       20 . A nitride semiconductor light emitting diode (LED) comprising:
 a substrate;   an n-type nitride semiconductor layer formed on the substrate;   an active layer formed on a portion of the n-type nitride semiconductor layer;   an electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;   a p-type nitride semiconductor layer formed on the electron emitting layer;   a p-electrode formed on the p-type nitride semiconductor layer; and   an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.   
   
   
       21 . A nitride semiconductor light emitting diode (LED) comprising:
 a p-electrode;   a p-type nitride semiconductor layer formed on the p-electrode;   an active layer formed on the p-type nitride semiconductor layer;   an electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;   an n-type nitride semiconductor layer formed on the electron emitting layer;   a substrate formed on the n-type nitride semiconductor layer; and   an n-electrode formed on the substrate.   
   
   
       22 . The nitride semiconductor LED according to  claim 21 ,
 wherein the electron emitting layer is composed of at least one Ga x Sc (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and 0≦y<1).   
   
   
       23 . The nitride semiconductor LED according to  claim 22 ,
 wherein the thicknesses of the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are equal to or different from each other.   
   
   
       24 . The nitride semiconductor LED according to  claim 22 ,
 wherein when the electron emitting layer is composed of more than two Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1), the thicknesses of the respective Ga x Sc (1-x) N layers composing the electron emitting layer are equal to or different from each other.   
   
   
       25 . The nitride semiconductor LED according to  claim 22 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are not doped with impurities.   
   
   
       26 . The nitride semiconductor LED according to  claim 22 ,
 wherein all or some of the Ga x Sc (1-x) N/Al y Ga (1-y) N layers (0≦x<1 and 0≦y<1) composing the electron emitting layer are doped with n-type impurities.   
   
   
       27 . The nitride semiconductor LED according to  claim 26 ,
 wherein the Ga x Sc (1-x) N layer and the Al y Ga (1-y) N layer composing the electron emitting layer are doped with the n-type impurities in the same concentration or different concentration.   
   
   
       28 . The nitride semiconductor LED according to  claim 21 ,
 wherein the electron emitting layer is composed of at least one Ga x Y (1-x) N/Al y Ga (1-y) N layer (0≦x<1 and0≦y<1).   
   
   
       29 . The nitride semiconductor LED according to  claim 21 ,
 wherein the substrate is any one selected from the group consisting of a GaN substrate, an SiC substrate, a ZnO substrate, and a conductive substrate.   
   
   
       30 . The nitride semiconductor LED according to  claim 21  further comprising
 another electron emitting layer formed between the p-type nitride semiconductor layer and the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.   
   
   
       31 . A nitride semiconductor light emitting diode (LED) comprising:
 a p-electrode;   a p-type nitride semiconductor layer formed on the p-electrode;   an electron emitting layer formed on the p-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;   an active layer formed on the electron emitting layer;   an n-type nitride semiconductor layer formed on the active layer;   a substrate formed on the n-type nitride semiconductor layer; and   an n-electrode formed on the substrate.   
   
   
       32 . The nitride semiconductor LED according to  claim 31 ,
 wherein the substrate is any one selected from the group consisting of a GaN substrate, an SiC substrate, a ZnO substrate, and a conductive substrate.

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