Power module with laminar interconnect

Abstract

A power module includes a substrate that includes an upper layer, an electrical insulator and a thermal coupling layer. The upper layer includes an electrically conductive pattern and is configured for receiving power devices. The electrical insulator is disposed between the upper layer and the thermal coupling layer. The thermal coupling layer is configured for thermal coupling to a heat sink. The power module further includes at least one laminar interconnect that includes first and second electrically conductive layers and an insulating layer disposed between the first and second electrically conductive layers. The first electrically conductive layer of the laminar interconnect is electrically connected to the upper layer of the substrate. Electrical connections connect a top side of the power devices to the second electrically conductive layer of the laminar interconnect.

1 . A power module comprising: 
 at least one substrate comprising an upper layer, an electrical insulator and a thermal coupling layer, wherein said upper layer comprises at least one electrically conductive pattern and is configured for receiving at least one power device, wherein said electrical insulator is disposed between said upper layer and said thermal coupling layer, and wherein said thermal coupling layer is configured for thermal coupling to a base plate;    at least one laminar interconnect comprising a first electrically conductive layer, an insulating layer and a second electrically conductive layer, wherein said insulating layer is disposed between said first and second electrically conductive layers, wherein said first electrically conductive layer of said laminar interconnect is electrically connected to said upper layer of said substrate; and    a plurality of electrical connections connecting a top side of the at least one power device to said second electrically conductive layer of said laminar interconnect.    
     
     
         2 . The power module of  claim 1 , wherein said electrical insulator is thermally conductive.  
     
     
         3 . The power module of  claim 1 , further comprising at least one heat sink, wherein said heat sink comprises said base plate, wherein said substrate is attached to said base plate.  
     
     
         4 . The power module of  claim 1 , wherein said substrate comprises direct bonded copper.  
     
     
         5 . The power module of  claim 1 , wherein said substrate comprises active metal braze.  
     
     
         6 . The power module of  claim 1 , further comprising a plurality of power devices mounted on said substrate, wherein said power devices are electrically connected to said upper layer of said substrate.  
     
     
         7 . The power module of  claim 6 , wherein said power devices comprise at least one transistor and at least one anti-parallel diode forming at least one switch, wherein said at least one switch is mounted on said electrically conductive pattern, wherein said electrical connections connect an anode of said diode to said second electrically conductive layer of said laminar interconnect.  
     
     
         8 . The power module of  claim 7 , wherein said at least one transistor comprises an insulated gate bipolar transistor (IGBT) comprising a collector and an emitter, and wherein said electrical connections connect said emitter to said anode of said anti-parallel diode.  
     
     
         9 . The power module of  claim 7 , wherein said at least one transistor comprises a MOSFET comprising a source and a drain, and wherein said electrical connections connect said source to said anode of said anti-parallel diode.  
     
     
         10 . The power module of  claim 7 , wherein said switch comprises at least two transistors and at least two anti-parallel diodes, wherein said switch is disposed on said electrically conductive pattern and further comprises a gate formed on said electrically conductive pattern, and wherein said electrical connections symmetrically connect each of said transistors to said gate.  
     
     
         11 . The power module of  claim 6 , wherein said power devices comprise a plurality of transistors, wherein at least one of said transistors is an IGBT and at least one of said transistors is a MOSFET.  
     
     
         12 . The power module of  claim 6 , wherein said power devices comprise a plurality of anti-parallel diodes, wherein at least one of said anti-parallel diodes is a bipolar diode and at least one of said anti-parallel diodes is a unipolar diode.  
     
     
         13 . The power module of  claim 6 , wherein said power devices comprise at least one MOSFET comprising a source and a drain, wherein said drain is soldered onto said electrically conductive pattern, and wherein said electrical connections connects said source to said upper layer of said laminar interconnect.  
     
     
         14 . The power module of  claim 1 , wherein said electrical connections comprise wire bonds.  
     
     
         15 . The power module of  claim 1 , wherein said electrical connections comprise at least one power overlay.  
     
     
         16 . The power module of  claim 1 , wherein said electrical connections comprise ribbon bonds.  
     
     
         17 . The power module of  claim 1 , wherein said electrical connections are symmetric for static and dynamic current sharing.  
     
     
         18 . The power module of  claim 1 , wherein said laminar interconnect comprises an edge card connector configured for connecting to a receptacle mounted on a back plane, wherein the back plane comprises a positive direct current (DC) bus layer, an output layer, and a negative DC bus layer.  
     
     
         19 . The power module of  claim 1 , further comprising at least one housing encasing said substrate.  
     
     
         20 - 46 . (canceled)