Semiconductor element and semiconductor memory device using the same

Abstract

A semiconductor memory device includes a plurality of memory cells, each including, a source region formed of a semiconductor material, a drain region formed of the semiconductor material, and a first region formed of the semiconductor material and located between the source region and the drain region. First and second insulator films sandwich the first region and a first gate electrode is connected to the first region through the first insulator film. In this arrangement, the first region is adapted to accumulate charges corresponding to stored information.

1 . A semiconductor memory device comprising: 
 a plurality of memory cells, each of the plurality of memory cells including, 
 a source region formed of a semiconductor material;  
 a drain region formed of the semiconductor material;  
 a first region formed of the semiconductor material and located between the source region and the drain region;  
 first and second insulator films, the first region being sandwiched between the first and second insulator films; and  
 a first gate electrode connected to the first region through the first insulator film,  
   wherein the first region is adapted to accumulate charges corresponding to stored information.    
     
     
         2 . A semiconductor memory device according to  claim 1 , further comprising: 
 a second gate electrode connected to the first region through the second insulator film.    
     
     
         3 . A semiconductor memory device according to  claim 1 , 
 wherein a thickness of the source region is larger than a thickness of the first region, and    wherein a thickness of the drain region is larger than a thickness of the first region.    
     
     
         4 . A semiconductor memory device according to  claim 1 , further comprising: 
 a plurality of word lines coupled to the first gate electrodes of the plurality of memory cells; and    a plurality of data lines coupled to the drain regions of the plurality of memory cells and crossing the plurality of word lines,    wherein the plurality of memory cells are arranged in a reticular pattern.