Spintronics Material and Tmr Device

Abstract

A spintronics material contains X 2 (Mn 1-y Cr y )Z, wherein X is at least one element selected from a group consisting of Fe, Ru, Os, Co and Rh, Z is at least one element selected from a group consisting of the group IIIB elements, the group IVB elements and the group VB elements, y is 0 or more and 1 or less. Fe 2 MnZ, Co 2 MnZ, Co 2 CrAl and Ru 2 MnZ are excluded.

1 : A spintronics material containing X 2 (Mn 1-y Cr y )Z wherein: 
 X is a combination of two or more elements including one element selected from a group consisting of Fe, Ru, Os, Co and Rh, and including at least one element selected from transition elements exclusive of said one element;    Z is at least one element selected from a group consisting of the group IIIB elements, the group IVB elements and the group VB elements; and    y is 0 or more and 1 or less.    
     
     
         2 : The spintronics material according to  claim 1 , wherein a spin polarization ratio is substantially 60% or more.  
     
     
         3 : A TMR device comprising: 
 two ferromagnetic layers composed of the spintronics material according to  claim 1;  and    a nonmagnetic layer sandwiched between the two ferromagnetic layers.    
     
     
         4 : The TMR device according to  claim 3 , wherein a spin polarization ratio of the spintronics material is substantially 60% or more.