Rectifying Contact to an N-Type Oxide Material or a Substantially Insulating Oxide Material

Abstract

A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

1 - 35 . (canceled)  
   
   
       36 . A method of making a diode, comprising: 
 providing a rectifying contact having a p-type oxide material, including: 
 a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and  
 a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; and  
   establishing the p-type oxide material in electrical contact with an n-type oxide material, thereby forming a p-n junction.    
   
   
       37 . The method as defined in  claim 36 , further comprising establishing a substantially insulating oxide material between the p-type oxide material and the n-type oxide material, thereby forming a p-i-n junction.  
   
   
       38 . The method as defined in  claim 36 , further comprising establishing the p-n junction on a substrate.  
   
   
       39 . The method as defined in  claim 36  wherein establishing the p-type oxide material in electrical contact with the n-type oxide material is accomplished via sputter deposition at ambient temperature.  
   
   
       40 . A method of using a p-type oxide material, the method comprising: 
 establishing the p-type oxide material in electrical contact with an n-type oxide material, the p-type oxide material including:    a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material;    wherein the p-type oxide material is adapted to provide a rectifying contact to an    
   
   
       41 . (canceled)