Electrolysis Plating System

Abstract

An electroplating apparatus and method are provided. The electrolysis plating apparatus includes an electrolytic cell, and copper electrode, a wafer electrode, and a magnetic field generator.

1 . An electrolysis plating apparatus, comprising:
 an electrolytic cell;   a copper electrode provided in the electrolytic cell;   a wafer electrode in the electrolytic cell and facing the copper electrode; and   a first magnetic field generator spaced apart from a rear side of the copper electrode or the wafer electrode.   
     
     
         2 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator is spaced apart from the rear side of the wafer electrode. 
     
     
         3 . The electrolysis plating apparatus according to  claim 2 , further comprising a second magnetic field generator spaced apart from the rear side of the copper electrode. 
     
     
         4 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator has a circular shape. 
     
     
         5 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator comprises at least two poles of the same polarity spaced apart in opposition to each other. 
     
     
         6 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator comprises an electromagnet. 
     
     
         7 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator comprises a permanent magnet. 
     
     
         8 . The electrolysis plating apparatus according to  claim 1 , wherein the first magnetic field generator is capable of rotating. 
     
     
         9 . The electrolysis plating apparatus according to  claim 1 , further comprising a power supply. 
     
     
         10 . The electrolysis plating apparatus according to  claim 9 , wherein the copper electrode is electrically connected to a positive terminal of the power supply, and wherein the wafer electrode is electrically connected to a negative terminal of the power supply. 
     
     
         11 . An electrolysis plating method, comprising:
 disposing a copper electrode in an electrolytic cell; disposing a wafer on a wafer electrode in the electrolytic cell such that the wafer faces the copper electrode;   providing a first magnetic field generator spaced apart from a rear side of the copper electrode or the wafer electrode; and   depositing copper ions on the wafer by operating the copper electrode and the wafer electrode and operating the first magnetic field generator.   
     
     
         12 . The electrolysis plating method according to  claim 11 , wherein the first magnetic field generator is provided spaced apart from a rear side of the wafer electrode. 
     
     
         13 . The electrolysis plating method according to  claim 12 , further comprising providing a second magnetic field generator spaced apart from a rear side of the copper electrode, and wherein depositing the copper ions on the wafer further comprises operating the second magnetic field generator. 
     
     
         14 . The electrolysis plating method according to  claim 11 , wherein the first magnetic field generator has a circular shape. 
     
     
         15 . The electrolysis plating method according to  claim 11 , wherein the first magnetic field generator comprises at least two poles of the same polarity spaced apart in opposition to each other. 
     
     
         16 . The electrolysis plating method according to  claim 11 , wherein the first magnetic field generator comprises an electromagnet. 
     
     
         17 . The electrolysis plating method according to  claim 11 , wherein the first magnetic field generator comprises a permanent magnet. 
     
     
         18 . The electrolysis plating method according to  claim 11 , wherein operating the first magnetic field generator comprises rotating the first magnetic field generator. 
     
     
         19 . The electrolysis plating method according to  claim 11 , further comprising providing a power supply. 
     
     
         20 . The electrolysis plating method according to  claim 19 , wherein the copper electrode is electrically connected to a positive terminal of the power supply, and wherein the wafer electrode is electrically connected to a negative terminal of the power supply, and wherein operating the copper electrode and the wafer electrode comprises providing power from the power supply.