US2008083697A1PendingUtilityA1
Porous silicon composite structure as large filtration array
Est. expiryOct 30, 2023(expired)· nominal 20-yr term from priority
B01D 71/0213B01D 2325/022B01D 71/64B01D 69/12B01D 69/10B01D 67/0079B01D 67/0034B01D 67/0072B01D 2325/08B01D 2325/24B01D 67/0062B01D 71/68
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Claims
Abstract
A novel asymmetric filter membrane, and process for making is disclosed in several exemplary versions. The membrane structure is physically robust and suitable for use in a wide variety of applications. The support membrane is may be comprised of material such as a porous silicon or a silicon oxide, and the separation membrane may be comprised of material such as a polymer, zeolite film, or silicon oxide. The process relies on steps adapted from the microelectronics industry.
Claims
exact text as granted — not AI-modified1 . A process for fabricating a composite microfilter structure comprising:
etching a pattern of micropores through a standard-size semiconductor wafer to form a support membrane; and providing at least one separation membrane atop the support membrane.
2 . The process recited in claim 1 , wherein the step of providing a separation membrane comprises providing an organic separation membrane.
3 . The process recited in claim 3 , wherein the organic separation membrane provided comprises a thermoplastic polymer.
4 . The process recited in claim 2 , wherein the organic separation membrane provided comprises a polymer that will cleanly and efficiently transmit a permeate to a support layer.
5 . The process recited in claim 3 , wherein the thermoplastic polymer is selected from the group consisting of polyimide, SiLK, polysulfone, and polyethersulfone.
6 . The process recited in claim 1 , wherein the step of providing a separation membrane comprises providing an inorganic separation membrane.
7 . The process recited in claim 6 , wherein the step of providing an inorganic separation membrane comprises providing an inorganic membrane that will cleanly and efficiently transmit a permeate to a support layer.
8 . The process recited in claim 6 , wherein the inorganic separation membrane is selected from the group consisting of silicon, silicon dioxide, zeolite and any combination thereof.
9 . The process recited in claim 6 , wherein the step of etching a pattern of micropores in a semiconductor wafer comprises dry etching a silicon-containing wafer by fluorine radicals in a plasma using TMDE.
10 . The process recited in claim 6 , wherein the step of providing an inorganic separation membrane comprises depositing an inorganic material by a method selected from the group consisting of CVD and plasma-enhanced CVD.
11 . A process for fabricating a silicon oxide membrane for a composite asymmetric microfilter structure, comprising:
depositing a silicon oxide atop a support membrane by a method selected from the group consisting of CVD and plasma-enhanced CVD with a TEOS source; depositing and curing a photoresist layer atop the silicon oxide; providing the photoresist layer with a pattern for a plurality of micropores; exposing and developing the pattern in the photoresist layer; transferring the pattern into the silicon oxide using a dry etch method; and removing the remaining photoresist.Cited by (0)
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