Semiconductor Power Conversion Apparatus

Abstract

A semiconductor power conversion apparatus capable of protecting an IGBT from an overvoltage by supplying a sufficient gate current to the gate of the IGBT. The IGBT is protected from the overvoltage by connecting clamping elements connected in series between a collector of the IGBT and the gate thereof, and by connecting a resistor to each of different junction points between the clamping elements connected in series.

1 . A semiconductor power conversion apparatus comprising: 
 a MOS gate semiconductor; and    an overvoltage protection circuit connected between a collector of the MOS gate semiconductor and a gate thereof,    wherein the overvoltage protection circuit has a plurality of clamping elements connected in series and a resistor is connected to each of anodes of the plurality of clamping elements.    
   
   
       2 . A semiconductor power conversion apparatus comprising: 
 a MOS gate semiconductor; and    an overvoltage protection circuit connected between a collector of the MOS gate semiconductor and a gate thereof,    wherein, as a current supplied from the overvoltage circuit is greater, a value of a saturation current of a semiconductor element at the output stage of a gate driver is smaller.    
   
   
       3 . A semiconductor power conversion apparatus according to  claim 2 , wherein said overvoltage protection circuit has a plurality of clamping elements connected in series, and a resistor is connected to each of anodes of the plurality of clamping elements.  
   
   
       4 . A semiconductor power conversion apparatus comprising: 
 a MOS gate semiconductor; and    an overvoltage protection circuit connected between a collector of the MOS gate semiconductor and a gate thereof,    wherein a reactor is connected between the overvoltage protection circuit and a gate driver.    
   
   
       5 . A semiconductor power conversion apparatus according to  claim 4 , wherein said overvoltage protection circuit has a plurality of clamping elements connected in series, and a resistor is connected to each of anodes of the plurality of clamping elements.  
   
   
       6 . A semiconductor power conversion apparatus comprising: 
 a MOS gate semiconductor; and    an overvoltage protection circuit connected between a collector of the MOS gate semiconductor and a gate thereof,    wherein a length of a wiring line between the overvoltage protection circuit and a gate driver is longer than a distance between the overvoltage protection circuit and a gate of an IGBT.    
   
   
       7 . A semiconductor power conversion apparatus according to  claim 6 , wherein said overvoltage protection circuit has a plurality of clamping elements connected in series, and a resistor is connected to each of anodes of the plurality of clamping elements.  
   
   
       8 . A semiconductor power conversion apparatus comprising: 
 a MOS gate semiconductor; and    an overvoltage protection circuit connected between a collector of the MOS gate semiconductor and a gate thereof,    wherein a value of a current flowing into the gate is limited to a predetermined value.    
   
   
       9 . A semiconductor power conversion apparatus according to  claim 8 , wherein said predetermined current value is smaller than a value obtained by dividing a potential difference between an ON gate voltage and an OFF gate voltage by a resistive value of the gate.