Method for fabricating metal-insulator-metal capacitor

Abstract

A method for fabricating a metal-insulator-metal capacitor is described. A first metal layer is formed on a substrate. A plasma treatment is performed on the surface of the first metal layer. Then, a first oxide layer, a nitride layer and a second oxide layer are formed in sequence over the first metal layer. Thereafter, a second metal layer is formed on the second oxide layer. The second metal layer, the second oxide layer, the nitride layer, the first oxide layer and the first metal layer are defined to form the metal-insulator-metal capacitor.

1 - 15 . (canceled)  
     
     
         16 . A method for fabricating a metal-insulator-metal capacitor, comprising the steps of: 
 forming a first metal layer on a substrate;    forming a first oxide layer over the first metal layer;    forming a nitride layer over the first oxide layer;    performing a plasma treatment on the surface of the nitride layer;    forming a second oxide layer over the nitride layer;    forming a second metal layer over the second oxide layer; and    defining the second metal layer, the second oxide layer, the nitride layer, the first oxide layer and the first metal layer to form the metal-insulator-metal capacitor.    
     
     
         17 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein after performing the plasma treatment, the method further includes forming a third oxide layer over the surface of the nitride layer.  
     
     
         18 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein a reactive gas used in the plasma treatment includes an oxygen-containing gas.  
     
     
         19 . The method for fabricating the metal-insulator-metal capacitor of  claim 18 , wherein the oxygen-containing gas includes oxygen or nitrous oxide.  
     
     
         20 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein the plasma treatment is performed in-situ.  
     
     
         21 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein the plasma treatment is performed ex-situ.  
     
     
         22 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein the first metal layer and the second metal layer are made of aluminum, copper, palladium, ruthenium, titanium nitride or tantalum nitride.  
     
     
         23 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein the step for forming the first metal layer and the second metal layer includes performing a DC magnetic-sputtering process, a chemical vapor deposition process or an evaporation process.  
     
     
         24 . The method for fabricating the metal-insulator-metal capacitor of  claim 16 , wherein the step for forming the second oxide layer, the nitride layer and the first oxide layer includes performing a chemical vapor deposition process.