Method for Manufacturing Semiconductor Device

Abstract

A method for manufacturing a semiconductor device is described. The method comprises: providing a mold; coating a glue on a surface of the mold; providing at least one semiconductor chip, wherein the semiconductor chip includes a first side and a second side on opposite sides, and the first side of the semiconductor chip is pressed into a portion of the glue to expose the second side of the semiconductor chip; forming an adhesive layer to cover the second side of the semiconductor chip and the exposed portion of the glue; forming a metal heat sink on the adhesive layer; removing the glue and the mold; disposing a circuit board on the exposed portion of the adhesive layer; providing wires to electrically connect the circuit board to the semiconductor chip; and forming an encapsulation layer to completely encapsulate the semiconductor chip, the wires and the exposed portion of the adhesive layer.

1 . A method for manufacturing a semiconductor device, comprising:
 providing a mold;   coating a glue on a surface of the mold;   providing at least one semiconductor chip including a first side and a second side on opposite sides, and the first side of the semiconductor chip is pressed into a portion of the glue to expose the second side of the semiconductor chip;   forming an adhesive layer to cover the second side of the semiconductor chip and the exposed portion of the glue;   forming a metal heat sink on the adhesive layer; and   removing the glue and the mold.   
   
   
       2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the surface of the mold includes a three-dimensional structure or the surface of the mold is a plane surface. 
   
   
       3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a material of the glue is a polymer material, a silica material, an epoxy material, a phenolic material, an acrylic material or a photoresist material. 
   
   
       4 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a material of the adhesive layer is Zn, ZnO, ITO, TaN, TiN, Ni, Cr, Ti, Ta, Al, AlN, Al x O y , GaN, InGaN, Si x N y , In, InN, Au, Ag, Cu, Zn, Pt, Pd, Ru, Rh, carbon nano-tube/Au, C/Au, diamond, diamond/Au, diamond/Ni/Au, Ni alloy, Cr alloy, Ag alloy, Au alloy, Cu alloy, Ti alloy, Ta alloy, Al alloy or In alloy. 
   
   
       5 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a thickness of the adhesive layer is less than about 10 μm. 
   
   
       6 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the step of forming the adhesive layer is performed by an evaporation deposition method, a sputtering deposition method or an electroless plating deposition method. 
   
   
       7 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a material of the metal heat sink is Cu, Au/Cu, Ag/Cu, Ag/Au/Cu, Cu alloy, Fe/Ni alloy, Ni, Ni/Cu, Ni/Au/Cu, Ni/Ag/Au/Cu, W, CuW, or an alloy thereof. 
   
   
       8 . The method for manufacturing a semiconductor device according to  claim 1 , wherein a thickness of the metal heat sink is greater than about 10 μm. 
   
   
       9 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the step of forming the metal heat sink is performed by an electro plating deposition method or an electroless plating deposition method. 
   
   
       10 . The method for manufacturing a semiconductor device according to  claim 1 , further comprising forming a metal reflective layer to cover the adhesive layer between the step of forming the adhesive layer and the step of forming the metal heat sink. 
   
   
       11 . The method for manufacturing a semiconductor device according to  claim 10 , wherein a thickness of the metal reflective layer is less than about 10 μm. 
   
   
       12 . The method for manufacturing a semiconductor device according to  claim 10 , wherein the step of forming the metal reflective layer is performed by an evaporation deposition method, a sputtering deposition method, an electroless plating deposition method or an electro plating deposition method. 
   
   
       13 . The method for manufacturing a semiconductor device according to  claim 10 , wherein a material of the metal reflective layer is Zn, Al, Ag, Au, Cu, Ru, Rh, Pt, Pd, Cr, Ni, Ti, or an alloy thereof. 
   
   
       14 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the step of pressing the semiconductor chip further comprises:
 providing at least one circuit board, wherein the circuit board is an integrated circuit board comprising at least one insulating layer and at least one electric conduction layer stacked with one another; and   pressing the electric conduction layer of the circuit board into another portion of the glue completely while exposing the insulating layer, wherein the adhesive layer covers the exposed portion of the insulating layer of the circuit board.   
   
   
       15 . The method for manufacturing a semiconductor device according to  claim 14 , further comprising forming a plurality of wires to electrically connect the electric conduction layer and the semiconductor chip after the step of removing the glue and the mold. 
   
   
       16 . The method for manufacturing a semiconductor device according to  claim 15 , further comprising forming an encapsulation layer to completely encapsulate the semiconductor chip, the wires, an exposed portion of the adhesive layer and connection regions of the wires and the electric conduction layer after the step of forming the wires. 
   
   
       17 . The method for manufacturing a semiconductor device according to  claim 1 , further comprising disposing at least one circuit board on an exposed portion of the adhesive layer after the step of removing the glue and the mold, wherein the circuit board is an integrated circuit board comprising at least one insulating layer and at least one electric conduction layer stacked on the adhesive layer in sequence. 
   
   
       18 . The method for manufacturing a semiconductor device according to  claim 17 , further comprising forming a plurality of wires to electrically connect the electric conduction layer and the semiconductor chip after the step of disposing the circuit board. 
   
   
       19 . The method for manufacturing a semiconductor device according to  claim 18 , further comprising forming an encapsulation layer to completely encapsulate the semiconductor chip, the wires, the exposed portion of the adhesive layer and connection regions of the wires and the electric conduction layer after the step of forming the wires. 
   
   
       20 . A method for manufacturing a semiconductor device, comprising:
 providing at least one semiconductor chip including a first side and a second side on opposite sides;   coating a glue on the first side of the semiconductor chip;   providing a mold and adhering the first side of the semiconductor chip onto a surface of the mold to expose the second side of the semiconductor chip;   forming an adhesive layer to cover the second side of the semiconductor chip, the exposed portion of the glue and the exposed portion of the surface of the mold;   forming a metal heat sink on the adhesive layer; and   removing the glue and the mold.