Laser scribe on front side of a semiconductor wafer

Abstract

Disclosed are a semiconductor wafer ( 10 ) having a front side laser scribe ( 22 ) and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation ( 12 ) on the front side of the semiconductor wafer ( 10 ) designed to accept laser scribing ( 22 ), and laser scribing the scribe foundation ( 12 ). Disclosed embodiments include a semiconductor wafer ( 10 ) having a scribe foundation ( 12 ) of layered dielectric ( 30 ) and metal ( 34 ) on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation ( 12 ) is performed in combination with the formation of a top level metal layer ( 34 ) on the semiconductor wafer ( 10 ) methods for manufacturing.

1 - 23 . (canceled)  
   
   
       24 . A method for manufacturing a semiconductor wafer comprising the steps of: 
 forming a scribe foundation on top of the front side of a semiconductor wafer, said scribe foundation comprising a protective overcoat layer; and    laser scribing a trackable scribe on the scribe foundation.    
   
   
       25 . A method for manufacturing a semiconductor wafer comprising the steps of: 
 forming a scribe foundation on top of the front side of a semiconductor wafer, said scribe foundation comprising a multiple metallic layers; and    laser scribing a trackable scribe on the scribe foundation.    
   
   
       26 . A method for manufacturing a semiconductor wafer according to step  25  wherein the step of forming a scribe foundation further comprises: 
 depositing at least one dielectric layer on the semiconductor wafer;    etching the dielectric layer;    depositing at least one metallic layer of said multiple metallic layers; and    etching the metallic layer.    
   
   
       27 . The method according to  claim 25 , wherein the step of forming a scribe foundation is performed at the edge of the wafer.  
   
   
       28 . The method according to  claim 26  wherein the step of depositing at least one dielectric layer is performed in combination with a step of forming a passivation overcoat layer on the semiconductor wafer.  
   
   
       29 . The method according to  claim 26  wherein the step of depositing at least one metallic layer is performed in combination with a step of forming bond pads on the semiconductor wafer.  
   
   
       30 . The method according to  claim 25  wherein the scribing step further comprises scribing to a depth of less than approximately 2 micrometers.  
   
   
       31 . The method according to  claim 25  wherein the scribing step further comprises scribing individual scribe marks of approximately 50 micrometers to approximately 100 micrometers in diameter.  
   
   
       32 . The method according to  claim 25  wherein the step of depositing at least one metallic layer comprises depositing aluminum.  
   
   
       33 . The method according to  claim 25  wherein the step of depositing at least one metallic layer comprises depositing copper.