US2008095878A1PendingUtilityA1

Imprint Lithography Template Having a Feature Size Under 250 nm

Assignee: UNIV TEXASPriority: Oct 12, 2000Filed: Jun 11, 2007Published: Apr 24, 2008
Est. expiryOct 12, 2020(expired)· nominal 20-yr term from priority
B82Y 10/00G11B 5/855B29C 2043/025B29C 37/005G03F 9/00Y10S977/887B29C 37/0053G03F 7/0002B29C 35/0888B29C 2035/0827B29C 43/003B82Y 40/00G03F 7/20B82B 3/00
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Claims

Abstract

The present invention includes a template comprising a plurality of protrusions and a plurality of recessions with a distance between a zenith of any of the plurality of protrusions and a nadir of any one of the plurality of recessions being less than 250 nm.

Claims

exact text as granted — not AI-modified
1 . An imprint lithography template comprising: 
 a body having first and second opposed sides; and    an imprint lithography mold, positioned upon said second side of said body, having a plurality of protrusions and a plurality of recessions, defining an imprint lithography patterning surface spaced-apart from said second side a height, with a distance between a zenith of any of said plurality of protrusions and a nadir of any of said plurality of recessions being less than 250 nm.    
     
     
         2 . The template as recited in  claim 1  wherein said plurality of recessions comprises a first set of recessions having a first depth and a second set of recessions having a second depth.  
     
     
         3 . The template as recited in  claim 2  wherein said first depth may be less than 250 nm.  
     
     
         4 . The template as recited in  claim 2  wherein said second depth is greater than said first depth.  
     
     
         5 . The template as recited in  claim 1  wherein said template comprises silicon, silicon dioxide, silicon germanium carbon, gallium nitride, silicon germanium, sapphire, gallium arsinide, epitaxial silicon, polysilicon, gate oxide, quartz, or a combination thereof.  
     
     
         6 . The template as recited in  claim 1  wherein said imprint lithography patterning surface is operable for imprinting into an imprinting material a pattern defined by said plurality of protrusions and said plurality of recessions.  
     
     
         7 . An imprint lithography mold having a plurality of protrusions and a plurality of recessions, defining an imprint lithography patterning surface, with a distance between a zenith of any said plurality of protrusions and a nadir of any of said plurality of recessions being less than 250 nm.

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