High-hardness and corrosion-tolerant integrated circuit packing mold

Abstract

A high-hardness and corrosion-tolerant integrated circuit packing mold comprises a package mold including at least one filling channel, at least one mold cavity, and at least one channel between the mold cavities; a protecting layer deposited upon surfaces of the package mold and the protecting layer being an amorphous coating layer. In one case, the protecting layer is a graded layer including an amorphous coating layer and a middle layer. In a second case, the protecting layer is a multiplayer structure formed by at least one amorphous coating layer and at least one polycrystal coating layer. In the third case, the protecting layer is a compound structure formed by distributing polycrystal material into an amorphous coating layer.

1 . A high-hardness and corrosion-tolerant integrated circuit packing mold comprising: 
 a package mold including at least one filling channel, at least one mold cavity, and at least one channel between the mold cavities;    a protecting layer deposited upon surfaces of the package mold and the protecting layer being an amorphous coating layer.    
   
   
       2 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the protecting layer is a graded layer including an amorphous coating layer and a middle layer.  
   
   
       3 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the protecting layer is a compound structure formed by distributing polycrystal material into an amorphous coating layer.  
   
   
       4 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the protecting layer is coated on the filling channel, mold cavities, channels and upper surfaces of the package mold.  
   
   
       5 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the protecting layer is made by one of physical vapor deposition (PVD) or chemical vapor deposition (CVD)  
   
   
       6 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the protection layer is an amorphous coating layer; the amorphous coating layer is mainly made of one of amorphous metal oxides (a-Me 1-x C x ) with x is between 0.3 to 0.7; amorphous metal carbides (a-Me 1-y C y )) with y between 0.25 to 0.9, and amorphous metal carbide-nitrides (a-Me(C, N))), or amorphous silicon nitrides (a-Si 1-z N z ) with z between 0.3 to 0.8, wherein x, y, and z are atomic ratio, in that the Me (metal) is one of transition metals.  
   
   
       7 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein the hardness of the protecting layer is greater than 30 GPa.  
   
   
       8 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 1 , wherein and the thickness of the amorphous coating layer  21  is selected from a value between 0.1 μm to 10 μm or a value between 0.2 μm and 0.5 μm.  
   
   
       9 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 2 , wherein the graded layer is formed by coating a middle layer on a surface of the package mold and then an amorphous coating layer is coated upon the middle layer.  
   
   
       10 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 2 , wherein a thickness of the middle layer is between 0.01 μm to 3 μm.  
   
   
       11 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 2 , wherein the middle layer is a silicon layer.  
   
   
       12 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 2 , wherein the middle layer is one of a polycrystal metal layer, polycrystal metal nitride, a polycrystal metal carbide, and a polycrystal metal carbide-nitride; where the metal is one of transition metals.  
   
   
       13 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 3 , wherein the size of the polycrystal material is between 5 nm to 100 nm (nanometers).  
   
   
       14 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 3 , wherein the polycrystal material is selected from one of silicon, polycrystal metals, polycrystal metal nitrides, polycrystal metal carbides, and polycrystal metal carbide-nitrides, where the metal is one of transition metals.  
   
   
       15 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 6 , wherein the transition metal is selected from one of chromium, aluminum, and zirconium.  
   
   
       16 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 12 , wherein the transition metal is one selected from chromium, aluminum, zirconium.  
   
   
       17 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 14 , wherein the transition metal is one selected from chromium, aluminum, zirconium.  
   
   
       18 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 12 , wherein the ratio of the nitrogen atom in the polycrystal metal nitride is from 30% to 80%; and the ratio of the carbon atom in the polycrystal metal carbide is from 30% to 80%.  
   
   
       19 . The high-hardness and corrosion-tolerant integrated circuit packing mold as claimed in  claim 14 , wherein the ratio of the nitrogen atom in the polycrystal metal nitride is from 30% to 80%; and the ratio of the carbon atom in the polycrystal metal carbide is from 30% to 80%.