Methods for Electrochemically Fabricating Structures Using Adhered Masks, Incorporating Dielectric Sheets, and/or Seed layers That Are Partially Removed Via Planarization

Abstract

Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.

1 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of at least one layer comprises: 
 (i) forming a desired pattern of dielectric material on the substrate or on previously deposited material wherein the patterning of the dielectric results in at least one void in the dielectric material that exposes a portion of the substrate or previously deposited material;  
 (ii) applying a seed layer material to the dielectric material and to the exposed portions of the substrate or previously deposited material;  
 (iii) depositing a conductive material into the at least one void in the dielectric; and  
 (iv) after depositing the conductive material, removing at least a portion of the seed layer material located on the dielectric material.  
   
   
   
       2 . The process of  claim 1  wherein operations (i)-(iv) are performed during the formation of a plurality of layers.  
   
   
       3 . The process of  claim 1  wherein the removing of the seed layer material comprises a planarization operation.  
   
   
       4 . The process of  claim 1  wherein the removing of the seed layer material comprises an etching operation.  
   
   
       5 . The process of  claim 1  wherein the forming a desired pattern of dielectric comprises the deposition of a liquid dielectric over the substrate or previously formed layer, followed by the subsequent solidification and patterning of the dielectric material.  
   
   
       6 . The process of  claim 1  wherein the forming a desired pattern of dielectric comprises the adhesion of a sheet of dielectric material to the substrate or previously formed layer, followed by the subsequent patterning of the dielectric material.  
   
   
       7 . The process of  claim 1  wherein the dielectric material comprises a photoresist material.  
   
   
       8 . The process of  claim 1  additionally comprising: 
 (v) removing at least a portion of the dielectric material to create at least a second void; and    (vi) then depositing a selected material into the second void.    
   
   
       9 . The process of  claim 1  additionally comprising: 
 (v) selectively etching into the conductive material to form at least one second void;    (vi) depositing a seed layer into the at least second void; and    (vii) depositing a second conductive material into the at least one second void.    
   
   
       10 . The process of  claim 1  additionally comprising: 
 (v) selectively forming at least one second void in the dielectric material;    (vi) depositing a seed layer into the at least second void; and    (vii) depositing a second conductive material into the at least one second void.    
   
   
       11 . The process of  claim 1  additionally comprising: 
 (v) depositing an adhesion layer material onto the dielectric material and onto the substrate or previously deposited material prior to applying the seed layer material.    
   
   
       12 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of at least one layer comprises: 
 (i) forming a desired pattern of a first material on the substrate or on previously deposited material wherein the patterning of the first material results in at least one void in the first material that exposes a portion of the substrate or previously deposited material;  
 (ii) applying a seed layer material to the first material and to the exposed portions of the substrate or previously deposited material;  
 (iii) depositing a first conductive material into the at least one void in the first material; and  
 (iv) after depositing the first conductive material, removing at least a portion of the seed layer material located on the first material.  
   
   
   
       13 . The process of  claim 12  wherein the first material comprises a dielectric.  
   
   
       14 . The process of  claim 12  wherein the first material comprises a conductive material.  
   
   
       15 . The process of  claim 12  wherein the substrate has a dielectric surface onto which the first material is to be deposited  
   
   
       16 . The process of  claim 12  wherein the substrate has a conductive surface onto which the first material is to be deposited  
   
   
       17 . The process of  claim 12  wherein the substrate has a surface having at least two parts, one of which is conductive and other of which is dielectric.  
   
   
       18 . The process of  claim 12  wherein the applying of the seed layer comprises a sputtering operation.  
   
   
       19 . The process of  claim 12  wherein the applying of the seed layer comprises a physical or chemical vapor deposition operation.  
   
   
       20 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of at least one layer comprises: 
 (i) forming a desired pattern of dielectric material on the substrate or on previously deposited material; and thereafter performing at least one of the following: 
 (1) depositing a structural conductive material;  
 (2) depositing a sacrificial conductive material; or  
 (3) depositing a seed layer.