Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtainable with Such a Method

Abstract

A method of manufacturing a semiconductor device comprising a dual gate field effect transistor is disclosed, in which method a semiconductor body with a surface and of silicon is provided with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type, opposite to the first conductivity type, between the source region and the drain region and with a first gate region separated from the channel region by a first gate dielectric and situated on one side of the channel region and with a second gate region separated from the channel region by a second gate dielectric and situated on an opposite side of the channel region, and wherein both gate regions are formed within a trench formed in the semiconductor body.

1 - 9 . (canceled)  
   
   
       10 . A semiconductor device comprising a dual gate field effect transistor, wherein the dual gate field effect transistor comprises: 
 a semiconductor body with a surface and comprising silicon;    a source region and a drain region of a first conductivity type;    a channel region of a second conductivity type, opposite to the first conductivity type, between the source region and the drain region;    a first gate region separated from the channel region by a first gate dielectric and situated on one side of the channel region, wherein the first gate region is formed within a first trench;    a second gate region separated from the channel region by a second gate dielectric and situated on an opposite side of the channel region, wherein the second gate region is formed within a second trench, wherein both gate regions are formed within a trench formed in the semiconductor body, and wherein the channel region is formed by the part of the semiconductor body between the first and second trench and the source and drain regions are formed at the surface of the semiconductor body.    
   
   
       11 . The semiconductor device as claimed in  claim 10 , further comprising a second neighboring dual gate transistor with one gate region in common to both transistors.