Organic light emitting diode display and manufacturing method thereof

Abstract

An organic light emitting diode display includes an insulating layer, a stress buffer disposed on the insulating layer, a first electrode disposed on the stress buffer, an organic light emitting member disposed on the first electrode, and a second electrode disposed on the organic light emitting member.

1 . An organic light emitting diode display comprising: 
 an insulating layer;    a stress buffer disposed on the insulating layer;    a first electrode disposed on the stress buffer;    an organic light emitting member disposed on the first electrode; and    a second electrode disposed on the organic light emitting member,    wherein the stress buffer comprises at least one of ITO, IZO, or Mo.    
   
   
       2 . The organic light emitting diode display of  claim 1 , wherein the insulating layer comprises an organic material.  
   
   
       3 . The organic light emitting diode display of  claim 2 , wherein the insulating layer is hardened by heat.  
   
   
       4 . The organic light emitting diode display of  claim 1 , wherein the stress buffer has a thermal expansion coefficient between a thermal expansion coefficient of the insulating layer and a thermal expansion coefficient of the first electrode.  
   
   
       5 . The organic light emitting diode display of  claim 1 , wherein the first electrode comprises at least one of Cr, Al, or Ag.  
   
   
       6 . The organic light emitting diode display of  claim 1 , wherein the first electrode comprises a reflective material and the second electrode comprises a transparent material.  
   
   
       7 . The organic light emitting diode display of  claim 6 , further comprising a third electrode disposed between the first electrode and the organic light emitting member.  
   
   
       8 . The organic light emitting diode display of  claim 7 , wherein the third electrode has a higher work function than the first electrode.  
   
   
       9 . The organic light emitting diode display of  claim 7 , wherein the third electrode comprises ITO or IZO.  
   
   
       10 . The organic light emitting diode display of  claim 1 , wherein the stress buffer has substantially the same planar shape as the first electrode.  
   
   
       11 . The organic light emitting diode display of  claim 1 , further comprising: 
 a gate line transmitting a gate signal;    a data line transmitting a data signal;    a driving voltage line transmitting a driving voltage;    a switching transistor coupled to the gate line and the data line; and    a driving transistor coupled to the switching transistor, the driving voltage line,    and the first electrode.    
   
   
       12 . The organic light emitting diode display of  claim 11 , further comprising a connecting member disposed on the insulating layer and connecting the switching transistor and the driving transistor.  
   
   
       13 . The organic light emitting diode display of  claim 1 , further comprising a thin film transistor disposed below the insulating layer.  
   
   
       14 . The organic light emitting diode display of  claim 13 , wherein the insulating layer comprises an organic material hardened by heat.