US2008118217A1PendingUtilityA1
Electro-Optic Polymer Waveguide Devices Incorporating Organically Modified Sol-Gel Clads
Assignee: LUMERA CORP A WASHINGTON CORPPriority: Nov 19, 2002Filed: Jan 14, 2008Published: May 22, 2008
Est. expiryNov 19, 2022(expired)· nominal 20-yr term from priority
G02B 6/138G02F 1/365G02F 2202/07G02F 2202/38G02F 1/065G02F 1/3558G02B 2006/121G02F 2201/07G02B 6/132
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Claims
Abstract
A method for making an optical device including establishing a temperature in a composition and applying an electric field to pole the core layer of the composition.
Claims
exact text as granted — not AI-modified1 . A method for making an optical device comprising:
establishing a temperature in a composition including at least one buffer cladding and an electro-optic polymer core layer sufficient to reduce electrical resistivity of at least a portion of the buffer cladding; and applying an electric field through the buffer cladding to pole the electro-optic polymer core layer.
2 . The method of claim 1 , wherein the temperature is sufficient to enable a polymerization reaction in the electro-optic core.
3 . The method of claim 2 , wherein the polymerization reaction includes a cross-linking reaction.
4 . The method of claim 1 , wherein the temperature is about 180° C.
5 . The method of claim 1 , wherein the buffer cladding includes an organically-modified sol-gel.
6 . The method of claim 1 , wherein the buffer cladding is reduced to an electrical resistivity of 10 11 ohm·cm −1 or less.
7 . The method of claim 1 , wherein after poling, the refractive index of the buffer cladding is lower than the refractive index of the core.
8 . The method of claim 1 , wherein the electro-optic core layer is poled while the composition is at a temperature sufficient for a crosslinking polymerization reaction of the core layer and sufficient for a reduction in electrical resistivity of the buffer cladding.
9 . The method of claim 1 , wherein the electric filed is applied through the buffer cladding and through a polymer cladding between the buffer cladding and core layer to pole the electro-optic polymer core layer.
10 . The method of claim 1 , wherein the electrical field is applied using a corona, an electrode, or a push-pull apparatus.
11 . A method for making an optical device, comprising:
heating a composition including a buffer cladding including an organically modified sol-gel, a polymer cladding, and an electro-optic polymer core; and applying an electric field through the buffer cladding and polymer cladding to pole the electro-optic polymer core.
12 . The method of claim 11 , wherein the composition is heated to a temperature sufficient to crosslink the electro-optic polymer core.
13 . The method of claim 11 , wherein the composition is heated to a temperature sufficient to lower the resistivity of the buffer cladding.
14 . The method of claim 11 , further comprising applying a second polymer cladding and second buffer cladding.
15 . The method of claim 14 , further comprising applying a metal layer on the second buffer cladding.
16 . The method of claim 11 , further comprising applying a second buffer cladding.
17 . The method of claim 11 , wherein the electro-optic core includes an organically-modified sol-gel.
18 . The method of claim 11 , further comprising shaping the electro-optic polymer core.
19 . The method of claim 14 , wherein the second polymer cladding includes an organically-modified sol-gel.
20 . A composition for use in making an optical device, comprising:
a conductive layer; and a buffer cladding including an organically modified sol-gel.
21 . The composition of claim 20 , further comprising a polymer cladding including an organically modified sol-gel adjacent to the buffer cladding.
22 . The composition of claim 21 , wherein the polymer cladding includes an organically modified titania-siloxane sol-gel.
23 . The composition of claim 20 , further comprising an adhesion promoter between the conductive layer and the buffer cladding.
24 . The composition of claim 20 , wherein the conductive layer includes a metallic layer.
25 . The composition of claim 20 , further comprising a semiconductor; and wherein the conductive layer is disposed on the semiconductor; and the buffer cladding is disposed on the conductive layer.Join the waitlist — get patent alerts
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