Semiconductor device manufacture method

Abstract

An electric conductive film is formed on the insulating surface of a substrate, the substrate having a trench formed on the insulating surface, and the conductive film being filled in the trench. Chemical mechanical polishing is executed to expose the insulating surface of the substrate and leave a portion of the conductive film in the trench. The surface of the substrate having the exposed conductive film in the trench and the exposed insulating surface is exposed to first liquid. After being exposed to the first liquid, the surface of the substrate is exposed to second liquid. The first liquid is either solution which contains at least one first substance selected from a first group consisting of benzotriazole, derivative of benzotriazole and interfacial active agent, or water. The second solution is solution which contains the first substance at a density higher than a density of the first liquid.

1 . A semiconductor device manufacture method, comprising steps of: 
 forming an insulating film made of insulating material on a surface of a semiconductor substrate;    subjecting a surface layer of the insulating film to chemical mechanical polishing to planarize a surface of the insulating film in such a manner that the insulating film covers the whole surface of the semiconductor substrate even after the polishing; and    bringing the planarized surface of the insulating film into contact with third liquid which contains at least one third substance selected from a third group consisting of benzotriazole, derivative of benzotriazole and interfacial active agent.    
     
     
         2 . A semiconductor device manufacture method according to  claim 1 , wherein in the step of bringing into contact with the third liquid, the planarized surface of the insulating film is polished using the third liquid as polishing liquid under pressure.  
     
     
         3 . A semiconductor device manufacture method according to  claim 1 , wherein the third liquid contains benzotriazole or benzotriazole derivative at a density of 0.001 wt. % or more.  
     
     
         4 . A semiconductor device manufacture method according to  claim 1 , wherein after the planarizing step, the planarized surface is brought into contact with the third liquid without drying the planarized surface.  
     
     
         5 . A semiconductor device manufacture method according to  claim 1 , further comprising a step of bringing the planarized surface of the insulating film into contact with fourth liquid prior to the step of bringing into contact with the third liquid, wherein the fourth liquid is either solution which contains the third substance at a density lower than a density of the third liquid, or water.  
     
     
         6 . A semiconductor device manufacture method according to  claim 5 , wherein in the step of bringing into contact with the fourth liquid, the planarized surface of the insulating film is polished using the fourth liquid as polishing liquid under pressure.  
     
     
         7 . A semiconductor device manufacture method according to  claim 5 , wherein after the planarized surface is exposed to the third liquid, the planarized surface is exposed to the fourth liquid without drying the planarized surface.  
     
     
         8 . The semiconductor device manufacture method according to  claim 1 , wherein the insulating film is made of fourth substance selected from a group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon carbooxide and silicon carbonitride.  
     
     
         9 . A semiconductor manufacture method, comprising steps of: 
 forming a barrier metal layer on an insulating surface of a substrate and on an inner surface of a trench formed on the insulating surface of the substrate;    forming a conductive layer made of copper or copper-containing alloy on the barrier metal layer, the conductive layer being filled in the trench;    subjecting the conductive layer to chemical mechanical polishing until the barrier metal layer is exposed, by using first slurry which contains copper anticorrosive; and    subjecting the barrier metal layer and a surface layer of the conductive layer in the trench to chemical mechanical polishing using second slurry which does not contain copper anticorrosive.    
     
     
         10 . A semiconductor device manufacture method according to  claim 9 , wherein the second slurry has pH of 9.0 to 10.0.  
     
     
         11 . A semiconductor device manufacture method according to  claim 9 , wherein a content of abrasive grains in the second slurry is 5 wt. % or less.  
     
     
         12 . A semiconductor device manufacture method according to  claim 9 , wherein the barrier metal layer is made of one substance selected from a group consisting of Ta, TaN, Ti and TiN.  
     
     
         13 . A semiconductor device manufacture method according to  claim 9 , wherein abrasive grains contained in the second slurry are made of silica.