Avalanche photodiode detector

Abstract

An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

1 . An avalanche photodiode detector, comprising:
 an absorber region formed over a semiconductor substrate and having an absorption layer for receiving incident photons and generating charged carriers, at least one insulating layer electrically isolating the absorber region from the semiconductor substrate; and   a multiplier region formed over the semiconductor substrate and having a multiplication layer;   wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge, for transferring charged carriers from the absorber region to the multiplier region.   
     
     
         2 . The avalanche photodiode detector of  claim 1 , wherein the absorber region further includes a pair of first contacts. 
     
     
         3 . The avalanche photodiode detector of  claim 2 , wherein bias across the absorber region is maintained by the first contacts. 
     
     
         4 . The avalanche photodiode detector of  claim 1 , wherein the multiplier region further includes a pair of second contacts. 
     
     
         5 . The avalanche photodiode detector of  claim 4  wherein bias across the multiplier region is maintained by the second contacts. 
     
     
         6 . The avalanche photodiode detector of  claim 1 , wherein the absorber region and the multiplier region are formed over a semiconductor substrate layer. 
     
     
         7 . The avalanche photodiode detector of  claim 1 , wherein a Schottky junction is used for injecting carriers in the multiplication layer. 
     
     
         8 . The avalanche photodiode detector of  claim 1 , wherein a quantum well and an N-well is used for injecting carriers in the multiplication layer. 
     
     
         9 . The avalanche photodiode detector of  claim 1 , wherein the bridge is a metal bridge. 
     
     
         10 . The avalanche photodiode detector of  claim 1  absorber region includes a first surface facing in a first direction, the multiplier region includes a second surface facing in the first direction, and the first surface has a larger area than the second surface. 
     
     
         11 - 48 . (canceled) 
     
     
         19 . The avalanche photodiode detector of  claim 1 , further comprising three insulating layers electrically isolating the absorber region from the semiconductor substrate. 
     
     
         20 . An avalanche photodiode detector, comprising:
 an absorber region formed over a semiconductor substrate and having an absorption layer for receiving incident photons and generating charged carriers; and   a multiplier region formed over the semiconductor substrate and having a multiplication layer;   wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge, for transferring charged carriers from the absorber region to the multiplier region; and   further wherein the absorber region includes a first surface facing in a first direction, the multiplier region includes a second surface facing in the first direction, and the first surface has a larger area than the second surface.   
     
     
         21 . The avalanche photodiode detector of  claim 19 , wherein the absorber region further includes a pair of first contacts. 
     
     
         22 . The avalanche photodiode detector of  claim 20 , wherein bias across the absorber region is maintained by the first contacts. 
     
     
         23 . The avalanche photodiode detector of  claim 19 , wherein the multiplier region further includes a pair of second contacts. 
     
     
         24 . The avalanche photodiode detector of  claim 22 , wherein bias across the multiplier region is maintained by the second contacts. 
     
     
         25 . The avalanche photodiode detector of  claim 19 , wherein the absorber region and the multiplier region are formed over a semiconductor substrate layer. 
     
     
         26 . The avalanche photodiode detector of  claim 19 , wherein a Schottky junction is used for injecting carriers in the multiplication layer. 
     
     
         27 . The avalanche photodiode detector of  claim 19 , wherein a quantum well and an N-well is used for injecting carriers in the multiplication layer. 
     
     
         28 . The avalanche photodiode detector of  claim 19 , wherein the bridge is a metal bridge. 
     
     
         29 . The avalanche photodiode detector of  claim 19 , further comprising at least one insulating layer electrically isolating the absorber region from the semiconductor substrate. 
     
     
         30 . The avalanche photodiode detector of  claim 29 , further comprising three insulating layers electrically isolating the absorber region from the semiconductor substrate.